Power Transistors Vos = 100V 2N1412(GeRMANIUM) 1 =15A 2N1412 JAN AVAILABLE P, = 150W 2N1412A PNP germanium power transistors for high-voltage power amplifier andswitching applications in military and industrial equipment. CASE 5 (TO-36) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Base Voltage Vos 100 Vdc Collector-Emitter Voltage Vors 80 Vdc Collector-Emitter Voltage Voro 60 Vdc Emitter-Base Voltage Veep 60 Vde Emitter Current (Continuous) Ip 15 Amp Base Current (Continuous) I, 4 Amp Junction & Storage Temperature Tote -65 to +100 c Thermal Resistance 850 0.5 c/w SAFE OPERATING AREA POWER-TEMPERATURE DERATING CURVE 40 160 30 Sms sims 500 us 250 us ~ 150 20 Ee < 7 us = 120 LEss z a = 100 a 5 = 80 z / 2 3 a 5 3 = 2 3B 40 & S 1 a 20 g o 3 Os 0 04 0 20 40 60 80 100 03 19 200, Ba To, GASE TEMPERATURE (C) 0.2 ga oO ON MY The maximum continuous _ This curve has a yalue of power is related to maxi- 150 Watts at case tempera- (PULSE CURVES mum junction temperature tures of 25C and is 0 Watts by the thermal resistance at 100C with a linear rela- 0.1 - 010 20 30 40 $0 60 70 80 90 100 factor. tion between am COLLECTOR-EMITTER VOLTAGE (VOLTS) allowable Pp = Ae The Safe Operating Area Curves indicate Ic (Duty cycle of the excursions make no significant Vcr limits below which the device will not go into change in these safe areas.) To insure operation secondary breakdown. Collector load lines for spe- below the maximum Ts, the power-temperature cific circuits must fall within the applicable Safe derating curve must be observed for both steady Area to avoid causing a collector-emitter short. state and pulse power conditions. 7-57