Mar. 2002
OUTLINE DRAWING Dimensions
in mm
TO-220F
TYPE
NAME
VOLTAGE
CLASS
✽ Measurement point of
case temperature
φ3.2 ± 0.2
1.3 MAX
0.8
2.54
13.5 MIN3.6 5.0
1.2
8.5
10.5 MAX
5.2
4.5
17
2.54
2.8
0.5 2.6
➀
➁
➂
➀➁➂
➀
➁
➂
T1TERMINAL
T2TERMINAL
GATE TERMINAL
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12PM-14
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit, hair driver,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool
✽1.Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=74°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Ratings
12
120
60
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
2000
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class Unit
V
V
14
700
840
MAXIMUM RATINGS
¡IT (RMS)......................................................................12A
¡VDRM....................................................................... 700V
¡IFGT !, IRGT!, IRGT #............................................30mA
¡Viso........................................................................2000V
¡UL Recognized: Yellow Card No.E80276(N)
File No. E80271
Mar. 2002
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
✽4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
(di/dt)c=–6.0A/ms
3. Peak off-state voltage
VD=400V
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
Tj=125°C, VDRM applied
Tc=25°C, ITM=20A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ✽3
Tj=125°C
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
10
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
—
3.5
—
PERFORMANCE CURVES
10
0
23 5710
1
80
40
23 5710
2
44
120
160
200
60
20
100
140
180
0
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
Tj = 125°C
Tj = 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
✽4
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
2310
–1
5710
0
23 5710
1
23 5710
2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
0
2310
2
5710
3
23 5
10
0
2310
1
5710
2
23 5710
3
23 5710
4
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
V
GD
= 0.2V
P
GM
= 5W
V
GM
= 10V
V
GT
= 1.5V I
GM
= 2A
I
RGT I
I
FGT I,
I
RGT III
P
G(AV)
=
0.5W
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
I
FGT I
I
RGT I,
I
RGT III
TYPICAL EXAMPLE
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
10
3
10
–1
10
3
10
4
10
2
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
23 57 23 57
10
2
10
5
23 57 23 57
NO FINS 16
12
6
4
2
14
10
8
0160 24 86101214
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
14040–40–60 –20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
TYPICAL EXAMPLE
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
10
1
TYPICAL EXAMPLE
160
120
100
60
20
0160 2 6 10 14
40
80
140
4812
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
160
120
100
60
20
03.20 0.4 1.2 2.0 2.8
40
80
140
0.8 1.6 2.4
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
160
120
100
60
20
0160 2 6 10 14
40
80
140
4812
60 60 t2.3
120 120 t2.3
100 100 t2.3
NATURAL
CONVECTION
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
NO FINS
RESISTIVE,
INDUCTIVE
LOADS
160–40 0 40 80 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
2
+
, G
–
TYPICAL
EXAMPLE
T
2
+
, G
+
T
2
–
, G
–
TYPICAL
EXAMPLE
DISTRIBUTION
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
100 (%)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
Mar. 2002
6Ω6Ω
6Ω
6V 6V
6V
RGRG
RG
A
V
A
V
A
V
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
160
100
80
40
20
014040–40–60 –20 0 20 60 80
140
100120
60
120
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
I
RGT III
I
RGT I
I
FGT I
TYPICAL EXAMPLE
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
# 2
# 1
TYPICAL EXAMPLE
T
j
= 125°C
I QUADRANT
III QUADRANT
10
1
2310
0
5710
1
23 5710
2
23 5710
3
3
2
10
2
7
5
3
2
7
5
7
5
3
2
10
0
TYPICAL
EXAMPLE
T
j
= 125°C
I
T
= 4A
τ = 500µs
V
D
= 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
VOLTAGE WAVEFORM
CURRENT WAVEFORM
V
D
t
(dv/dt)
C
I
T
τt
(di/dt)
C
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)