Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13005HL MJE LOW VOLTAGE SERIES TRANSISTORS FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING SUITABLE FOR 110V CIRCUIT MODE WIDE SOA FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings Tc=25C TO-220 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter- Base Voltage VEBO 9 V Collector Current IC 5 A Total Power Dissipation PC 75 W Junction Temperature Tj 150 C Storage Temperature Tstg -65-150 C Electronic Characteristics Tc=25C CHARACTERISTICS SYMBOL TEST CONDITION Collector-Base Cutoff Current ICBO VCB=400V 100 A Collector-Emitter Cutoff Current ICEO VCE=200V,IB=0 250 A Collector-Emitter Voltage VCEO IC=10mA,IB=0 200 V Emitter -Base Voltage VEBO IE=10mA,IC=0 9 V Collector-Emitter Saturation Voltage Vces Base-Emitter Saturation Voltage Vbes DC Current Gain hFE Si semiconductors 2004.10 MIN MAX IC=0.5A,IB=0.1A 0.6 IC=2.0A,IB=0.4A 1.0 IC=4.0A,IB=1.0A 2.0 IC=2.0A,IB=0.4A 2.0 VCE=5V,IC=10mA 10 VCE=5V,IC=1.0A 15 UNIT V V 80 1 Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13005HL MJE LOW VOLTAGE SERIES TRANSISTORS SOA (DC) Ic(A) 10 Tj Pc % 120 100 1 80 IS/B 60 Ptot 0.1 40 20 0.01 1 100 10 Vce(V) 100 0 hFE - Ic hFE 100 50 Tj=125 Tj=25 Tj=25 10 Vce=1.5V 1 0.001 100 150 Tj( ) 200 Tj= - 40 Vce=5V 0.01 0.1 1 Ic(A) 10 1 0.001 Vces - Ic Vces(v) 100 hFE - Ic hFE Tj=125 Tj= - 40 10 0 1000 3.5 hFE=5 3 Tj=125 Tj=25 Tj= - 40 10 0.01 Vbes(v) 0.1 1 10 Ic(A) 100 Vbes - Ic Tj=125 hFE=5 Tj= - 40 2.5 2 Tj=25 1 1.5 1 0.1 0.5 0.01 0.01 Ic(A) 0.1 Si semiconductors 1 2004.10 10 100 0 0.01 0.1 1 10 Ic(A) 100 2 Shenzhen SI Semiconductors Co., LTD. Product Specification TO-220 MECHANICAL DATA UNIT mm SYMBOL min A 3.5 max SYMBOL 4.8 e B 2.4 F 1.1 1.4 B1 1.8 L 12.5 14.5 b nom 0.6 b1 c 1.2 5.9 E Si semiconductors nom max 2.54 L1 3.5 L2 6.3 P 0.4 D D1 min 2004.10 16.5 Q 2.5 3.1 6.9 Q1 2.0 2.8 10.7 Z 3.0 3