HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6724
Issued Date : 1993.01.13
Revised Date : 2002. 01.17
Page No. : 1/3
HTIP32C HSMC Produc t Specification
HTIP32C
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP32C is designed for use in general purpose amplifier and
switching applica tions.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temper ature............................................................................................. -55 ~ +150 °C
Junction Temperature..................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
Total Power Dissipation (Ta=25°C)....................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................. -100 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current.............................................................................................................. -3 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -100 - - V IC=-1mA, IE=0
BVCEO -100 - - V IC=-30mA, IB= 0
ICES - - -200 uA VCE=-100V
ICEO - - -300 uA VCE=-60V
IEBO - - -1 mA VEB=-5V
*VCE(sat) - - -1.2 V IC=-3A, IB=-375mA
*VBE(on) - - -1.8 V IC=-3A, VCE=-4V
*hFE1 25 45 - IC=-1A, VCE=-4V
*hFE2 10 - 50 IC=-3A, VCE=-4V
fT 3 - - MHz IC=-0.5A, VCE=-10V, f=1MHz
*Pulse Test: Pulse Wid th ≤380us, Dut y Cycle≤2%
TO-220
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6724
Issued Date : 1993.01.13
Revised Date : 2002. 01.17
Page No. : 2/3
HTIP32C HSMC Produc t Specification
Characteristics Curve
Cu r rent Gain & Collector Current
10
100
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
hFE
hFE @ V
CE
=4V
25
o
C
75
o
C125
o
C
Satur ation Volta ge & C ollect or Cur rent
100
1000
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
Sat u r ation Volt ag e ( mV)
V
CE(sat)
@ I
C
=8I
B
25
o
C
75
o
C
125
o
C
ON Voltage & Col lector Curren t
100
1000
10000
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
O N Voltage ( mV)
V
BE(ON)
@ V
CE
=4V
25
o
C
75
o
C125
o
C
Sw itching Time & Collector Current
0.01
0.10
1.00
10.00
0.1 1.0 10.0
Collector Curren t (A)
Switching Times ( us
)
VCC=30V, IC=10IB1=-10IB2
Tstg
Ton
Tf
Capacita nce & Rever se -Biased Voltage
10
100
1000
0.1 1 10 100
R ever se-Biased Voltag e ( V)
Capacitance (pF)
Cob
Safe Opera ting Area
1
10
100
1000
10000
100000
1 10 100
Forward Vol t age-V
CE
(V)
Collector Current-I
C
(mA)
P
T
=1ms
P
T
=100ms
P
T
=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6724
Issued Date : 1993.01.13
Revised Date : 2002. 01.17
Page No. : 3/3
HTIP32C HSMC Produc t Specification
TO-220AB Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-*0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controll i ng dimensi on: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any questi on with packi ng specifi cation or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Allo y; solder plati ng
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Li fe-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Pa rk Hsi n-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
AB
E
G
IK
M
OP
3
2
1
C
N
H
D
4
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Pac k age
HSMC Package Code: E
Marking:
Date Code Control Code
HP
32C
TI
