TO-92 Plastic-Encapsulate Transistors Wi @, MPSz222A TRANSISTOR(NPN) a m o : TO-92 : 1.EMITTER | : 2.BASE | 3.COLLECTOR 1 2 3 FEATURES Vipricso: 75 V Tu, Tstg: -55C to + 150C ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) wage junction temperature range Collector-base breakdown voltage V(BR)CBO Ic= 10 A, le=0 75 Vv Collector-emitter breakdown voltage V(BRICEO Ic= 10 mA, Is=0 40 Vv Emitter-base breakdown voltage ViBR)EBO te= 104 A, Ic=0 6.5 Vv Collector cut-off current IcBo Vea= 70 V, le=0 0.1 LA Collector cut-off current Iceo Vce= 35 V, le=0 0.1 BA Emitter cut-off current lego Ves= 3 V, Ic=0 0.1 BA hee) Vce= 10 V, ic= 150 mA 100 300 DC current gain hrec2) Vce= 10 V, Ic= 1 mA 60 Collector-emitter saturation voltage VcEsat Ic= 500 mA, Is= 50 mA 4 Vv Base-emitter saturation voltage VBEsat Ic= 500 mA, Ip= 50 mA 2 Vv Vce= 20 V, c= 20 mA Transition frequency fr 300 MHz f =100MHz Rank L iH Range 100-200 200-300 133 Typical Characteristics MPS2222A Vce=1.0V ce woe ee ee VCE=10V hre DCCURRENT GAIN 0.1 02 03 O58 0.7 1.0 2.0 30 507.0 10 20 30 50 70 100 100 300 500 700 1.0K Ic COLLECTOR COURRENT(mA) DC Current Gain 8 oo = 300 2 VBE sat @ic/fle=10 8 o6 200 g VBE @Ic/lB=10V 5 0.4 9 100 > 0.2 ~ oO VcEsat @lc/ls=10 50 1.0 2.0 30 5.07.0 10 20 30 50 70 10 Ic COLLECTOR COURRENT(mA) 0 0.1 02 05 1020. 5.0 10 20 50 100 200 500 1.0K Ic COLLECTOR COURRENT(mA) ft, CURRENT-GAINBANDWIDTH PRODUCT(MHz) "On" Volages Current-Gain Bandwidth Product 134