TELEDYNE
JUDSON TECHNOLOGIES
A Teledyne Technologies Company 1/7
TELEDYNE
JUDSON TECHNOLOGIES
A Teledyne Technologies Company
221 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936-9641
PHONE: 215-368-6901
FAX: 215-362-6107
www.teledynejudson.com
PB 4206
September 2003
J22 and J23 SERIES
InGaAs PHOTODIODES
Operating Instructions
CAUTION!
• To avoid heat damage to the detec-
tor, use a heat sink (such as a pair of
tweezers) on the pin when soldering
TO-style packages.
• Avoid touching the package win-
dow. Clean gently with a cotton swab
and ethyl alcohol if needed.
• Detectors mounted on ceramics or
without windows require extra caution
in handling. The exposed gold bond
wires are extremely fragile.
• Do not use a standard ohmmeter to
measure the diode. Large forward cur-
rents may destroy the detector.
• Do not exceed maximum reverse
bias voltage listed in the specification
table.
• Make all circuit connections be-
fore applying power. Turn off power
before disconnecting the detector.
General
The J22 and J23 series are high
performance InGaAs detectors
operating over the spectral range
from 0.8µm to 2.6µm. These
detectors provide fast rise time,
uniformity of response, excellent
sensitivity, and long term reliability
for a wide range of applications. For
enhanced performance or
temperature stability of response
near the cutoff wavelength, Teledyne
Judson offers a variety of thermoelect-
rically cooled detector options.
The equivalent circuit for an InGaAs
photodiode (Fig. 1) is a photon-
generated current source with shunt
resistance RD, parallel capacitance
CD and series resistance RS. The
value RS is very small compared to
RD and can be disregarded except at
high power levels (more than
10mW).
Responsivity
An InGaAs photodiode generates a
current across the p-i-n junction
when photons of sufficient energy
are absorbed within the active
region. The responsivity (Amps/
Watt) is a function of wavelength
and detector temperature. Figure 3
shows the typical response for the
J22 and J23 series at room
temperature operation.
Applications
·Gas analysis
·NIR-FTIR
·Raman spectroscopy
·IR fluorescence
· Blood analysis
· Optical sorting
·Radiometry
·Chemical detection
·Optical communication
· Optical power monitoring
·Laser diode monitoring
·Laser burn-in
Figure 1.
InGaAs Photodiode Equivalent Circuit
TELEDYNE
JUDSON TECHNOLOGIES
A Teledyne Technologies Company 2/7
J22 and J23 SERIES
InGaAs PHOTODIODES
Operating Instructions
Operating Circuits
The recommended circuit for most
applications is an op-amp in a
negative-feedback transimpedance
configuration (Fig. 2). The feedback
circuit converts the detector output
current to a voltage, while the op-
amp maintains the detector near
zero-volt bias for lowest noise.
An undesirable DC offset current, or
"dark current", will be produced in
this configuration. It is a function of
the preamp input bias current Ib, the
preamp input offset voltage Vos, and
the detector shunt resistance RD.
This total "dark current" is:
Total ID = Ib+ (Vos / RD)
Selection of the proper op-amp is
important for low preamp noise and
best system bandwidth. For higher
RD detectors, choose a preamp with
low bias current; for lower RD
detectors, choose a preamp with low
offset voltage.
Testing
J22 and J23 Series room temperature
InGaAs detectors are designed for
operation under ambient conditions
to +60°C.
Each device is tested for:
• Minimum responsivity at 1550nm
• Minimum shunt impedance RD
• Maximum dark current ID
Statistical data can be provided.
Absolute response vs. wavelength
from 800 to 1800 nm is available for
detectors 2mm or larger.
Device Options
Teledyne Judson’s standard InGaAs
detectors, the J22 series, offers high
reliability and performance in the
spectral range from 0.8 µm to 1.7µm.
In addition, the J23 series extended
InGaAs detectors are available in
four cutoff options at 1.9µm, 2.2µm,
2.4µm and 2.6µm. Figure 3 shows
the typical response for the J22 and
J23 series at room temperature
operation.
Package Options
The J22 and J23 series are available
in standard TO packages, TE
cooled, LN2 cooled, ceramic sub-
mounts, and bare die. We also offer
different window materials, lenses
or optical filter options.
Accessories
For a complete system, Teledyne Judson
offers low noise transimpedance
amplifier modules, heat sink/preamp
assemblies and temperature
controllers. For further details,
please visit our website.
Call us
Let our team of application
engineers assist you in selecting
the best detector design for your
application. Or visit our website for
additional information on all of
Teledyne Judson’s products.
Figure 2.
Basic Operating Circuit
TELEDYNE
JUDSON TECHNOLOGIES
A Teledyne Technologies Company 3/7
0
0.5
1
1.5
35.225.115.0
Wavelength (um)
Responsivity (A/W)
2.6µm2.2µm
1.9µm
1.7µm
2.4µm
Typical Specification @ 22°C
Figure 3. Responsivity vs. Wavelength for InGaAs @ 22°C
* Tighter tolerance for cutoff and peak wavelengths may be available upon customer request.
All specifications are for detector operation at 0V bias and 22C unless otherwise specified.
Detector Model
Number
Active
Size
Diameter
(mm)
50% Cutoff
Wavelength*
(µm)
Peak
Wavelength*
(µm)
Peak
Responsivity
(A/W)
min
51-E5.351-E1.721+E0.111+E0.501-E0.311-E0.390+E5.180+E0.4040.0U04R-I81-22J
51-E5.451-E0.921+E5.111+E4.701-E0.411-E0.490+E0.180+E5.2570.0U57R-I81-22J
51-E8.541-E2.121+E8.321+E9.190-E0.101-E0.180+E0.680+E5.1052.0U052R-I81-22J
41-E0.141-E0.22
1+E4.421+E2.290-E5.201-E5.280+E0.270+E0.5005.0U005R-I81-22J
41-E8.141-E7.321+E8.421+E4.280-E0.190-E0.170+E0.670+E5.1000.1M10R-I81-22J
41-E5.341-E1.721+E0.521+E5.280-E0.490-E0.470+E6.160+E0.4000.2M20R-I5-22J
41-E2.341-E5.411+E9.611+E9.470-E0.180-E0.170+E6.160+E0.852.09.1-U052R-I81-32J
41-E6.541-E9.711+E9.711+E6.570-E0.380-E0.360+E2.560+E6.205.09.1-U005R-I81-32J
31-E0.131-E4.111+E8.811+E2.660-E0.170-E0.1
60+E6.150+E0.800.19.1-M10R-I81-32J
31-E3.231-E3.311+E6.711+E4.560-E0.470-E0.450+E0.350+E5.100.29.1-M20R-I5-32J
31-E3.431-E0.611+E3.611+E4.450-E0.160-E0.140+E0.940+E5.400.39.1-M30R-I5-32J
31-E2.131-E6.111+E9.111+E4.160-E0.170-E0.160+E0.150+E0.552.02.2-U052R-I81-32J
31-E0.231-E8.211+E2.211+E6.160-E0.370-E0.350+E4.350+E7.105.02.2-U005R-I81-32J
31-E7.331-E2.511+E4.211+E7.150-E0.160-E0.150+E0.140+E0.500.12.
2-M10R-I81-32J
31-E2.821-E2.111+E2.211+E5.150-E0.460-E0.440+E0.240+E0.100.22.2-M20R-I5-32J
21-E5.121-E1.211+E8.111+E3.140-E0.150-E0.130+E0.630+E0.300.32.2-M30R-I5-32J
31-E5.231-E5.301+E9.801+E3.660-E5.370-E5.350+E0.250+E0.151.152.04.2-U052R-I81-32J
31-E3.431-E1.611+E0.101+E3.750-E0.160-E0.140+E6.640+E3.351.105.04.2-U005R-I81-32J
31-E8.721-E1.111+E1.101+E0.850-E5.360-E5.340+E0.240+E0.151.100.14.2-M10R-I
81-32J
21-E8.121-E5.211+E0.101+E1.740-E5.150-E5.130+E0.430+E0.251.100.24.2-M20R-I5-32J
21-E2.321-E6.401+E3.801+E8.540-E5.350-E5.330+E3.120+E5.601.100.34.2-M30R-I5-32J
31-E8.431-E7.601+E7.401+E3.350-E0.160-E0.140+E0.540+E5.202.152.06.2-U052R-I81-32J
31-E4.821-E2.101+E3.501+E7.350-E0.360-E0.340+E6.130+E0.802.105.06.2-U005R-I81-32J
21-E5.121-E1.201+E9.501+E2.440-E0.150-E0.130+E0.530+E5.202.100.16.2-M10R-I
81-32J
21-E4.321-E8.401+E3.501+E7.340-E0.450-E0.430+E0.120+E0.502.100.26.2-M20R-I5-32J
21-E5.621-E2.901+E1.401+E9.230-E0.140-E0.120+E2.320+E6.101.100.36.2-M30R-I5-32J
1.00
1.10
1.7+/-0.1 1.65+/-0.10 0.90
NEP (W/rt-Hz)
@ Peak Wavelength
max typ
Peak D*
(cmHz
1/2
/W)
@ 1KHz
min typ
Shunt Impedence
(Ohm)
min typ
Dark Current (A)
@ Vr (max)
typ max
2.6+/-0.1
1.75+/-0.10
1.90+/-0.10
2.15+/-0.10
2.25+/-0.10
1.9+/-0.1
2.2+/-0.1
2.4+/-0.1
TELEDYNE
JUDSON TECHNOLOGIES
A Teledyne Technologies Company 4/7
1.9µm Cutoff Thermoelectrically Cooled Extended InGaAs Detectors
* Tighter tolerance for cutoff and peak wavelengths may be available upon customer request.
All specifications are for detector operation at 0V bias and 22C unless otherwise specified.
* Tighter tolerance for cutoff and peak wavelengths may be available upon customer request.
All specifications are for detector operation at 0V bias and 22C unless otherwise specified.
J22 and J23 SERIES
InGaAs PHOTODIODES
Operating Instructions
Detector Model Number
Active Size
Diameter
(mm)
Operating
Temp.
(°C)
50% Cutoff
Wavelength*
(µm)
Peak
Responsivity
(A/W)
min
Capacitance
(pF)
@ 0V
typ
5751-E0.551-E1.721+E4.421+E1.380+E6.580+E8.252.09.1-U052R-C66-1ET32J
05251-E4.841-E2.121+E3.521+E7.380+E0.280+E0.
105.09.1-U005R-C66-1ET32J
000141-E5.141-E2.221+E8.521+E1.470+E0.670+E0.300.19.1-M10R-C66-1ET32J
000441-E6.341-E0.521+E0.521+E5.370+E1.160+E5.500.29.1-M20R-C66-1ET32J
000941-E8.641-E6.921+E9.321+E8.260+E0.360+E5.100.39.1-M30R-C66-1ET32J
5751-E1.251-E0.331+E0.121+E3.790+E8.290+E4.152.09.1-U052R-C66-2ET32J
05251-E5.351-E0.531+E3.121+E9.890+E0.180+E2.505.09.1-U005R-C66-2ET32J
000151-E3.651-E0.931+E4.121+E9.
980+E2.380+E6.100.19.1-M10R-C66-2ET32J
000441-E6.141-E2.231+E1.121+E0.870+E2.570+E6.200.29.1-M20R-C66-2ET32J
000941-E9.241-E1.421+E1.921+E4.670+E5.160+E5.700.39.1-M30R-C66-2ET32J
5761-E5.851-E2.131+E6.231+E8.101+E6.190+E0.852.09.1-U052R-C66-3ET32J
05251-E3.151-E8.131+E5.331+E4.290+E0.790+E5.305.09.1-U005R-C66-3ET32J
000151-E2.251-E1.331+E1.431+E9.290+E4.290+E2.100.19.1-M10R-C66-3ET32J
000451-E8.551-E2.8
31+E1.331+E2.280+E4.380+E7.100.29.1-M20R-C66-3ET32J
000941-E2.141-E7.131+E2.231+E6.170+E0.870+E0.400.39.1-M30R-C66-3ET32J
5761-E0.461-E7.531+E5.531+E9.301+E4.601+E2.352.09.1-U052R-NC3-4ET32J
05261-E7.561-E1.831+E8.731+E5.501+E2.301+E6.105.09.1-U005R-NC3-4ET32J
000161-E3.951-E3.131+E5.931+E7.601+E2.190+E0.600.19.1-M10R-NC3-4ET32J
000451-E7.251-E9.331+E5.631+E6.490+E4.180+E0.700.29.1-M20R-NC3-4ET32J
00095
1-E9.551-E3.831+E5.431+E2.380+E0.380+E5.100.39.1-M30R-NC3-4ET32J
0.102- 1.85+/-0.10
1.0-40
1.0
1.0
NEP (W/rt-Hz)
@ peak wavelength
max typ
Shunt Impedence
(Ohm)
min typ
Peak D*
(cmHz
1/2
/W)
@ 1KHz
min typ
-65
-85
1.83+/-0.10
1.82+/-0.10
1.81+/-0.10
Detector Model Number
Active Size
Diameter
(mm)
Operating
Temp.
(°C)
50% Cutoff
Wavelength*
(µm)
Peak
Responsivity
(A/W)
min
Capacitance
(pF)
@ 0V
typ
5741-E3.241-E2.311+E7.911+E8.670+E2.270+E1.152.02.2-U052R-C66-1ET32J
05241-E8.341-E4.521+E2.111+E2.860+E0.860+E0.405.02.2-U005R-C66-1ET32J
000141-E9.641-E8.921+E3.111+E0.960+E4.260+E2.100.12.2-M10R-C66-1ET32J
000431-E6.131-E3.221+E1.111+E7.750+E4.450+E2.200.22.2-M20R-C66-1ET32J
00093
1-E1.331-E3.411+E7.811+E2.650+E2.140+E2.600.32.2-M30R-C66-1ET32J
5741-E1.141-E5.121+E1.221+E5.170+E6.970+E8.452.02.2-U052R-C66-2ET32J
05241-E7.141-E4.221+E6.221+E8.170+E6.370+E8.105.02.2-U005R-C66-2ET32J
000141-E1.341-E4.421+E9.221+E0.270+E1.160+E5.500.12.2-M10R-C66-2ET32J
000441-E5.731-E1.121+E4.221+E7.160+E9.150+E5.900.22.2-M20R-C66-2ET32J
000931-E4.131-E0.221+E9.121+E3.150+E2.550+E6.200.32.2-M30R-C6
6-2ET32J
5751-E3.451-E0.621+E2.521+E7.380+E2.580+E6.252.02.2-U052R-C66-3ET32J
05251-E6.651-E3.921+E7.621+E8.480+E2.280+E1.105.02.2-U005R-C66-3ET32J
000141-E4.141-E6.121+E6.721+E4.570+E0.770+E5.300.12.2-M10R-C66-3ET32J
000441-E9.241-E2.421+E0.621+E3.470+E1.160+E5.500.22.2-M20R-C66-3ET32J
000941-E0.641-E5.821+E4.421+E1.360+E6.260+E3.100.32.2-M30R-C66-3ET32J
5751-E1.251-E0.331+E0.121+E4.790+E9.180+E5.952.0
2.2-U052R-NC3-4ET32J
05251-E1.351-E4.431+E4.131+E0.180+E0.980+E5.405.02.2-U005R-NC3-4ET32J
000151-E3.541-E6.731+E7.131+E2.180+E0.380+E5.100.12.2-M10R-NC3-4ET32J
000441-E4.141-E0.231+E2.121+E8.870+E2.470+E1.200.22.2-M20R-NC3-4ET32J
000941-E1.341-E4.421+E6.821+E1.660+E0.960+E5.400.32.2-M30R-NC3-4ET32J
NEP (W/rt-Hz)
@ peak wavelength
max typ
Shunt Impedence
(Ohm)
min typ
Peak D*
(cmHz
1/2
/W)
@ 1KHz
min typ
-20
-40
-65
-85
2.14+/-0.10
2.11+/-0.10
2.09+/-0.10
2.07+/-0.101.1
1.1
1.1
1.1
2.2µm Cutoff Thermoelectrically Cooled Extended InGaAs Detectors
TELEDYNE
JUDSON TECHNOLOGIES
A Teledyne Technologies Company 5/7
2.4µm Cutoff Thermoelectrically Cooled Extended InGaAs Detectors
2.6µm Cutoff Thermoelectrically Cooled Extended InGaAs Detectors
* Tighter tolerance for cutoff and peak wavelengths may be available upon customer request.
All specifications are for detector operation at 0V bias and 22C unless otherwise specified.
* Tighter tolerance for cutoff and peak wavelengths may be available upon customer request.
All specifications are for detector operation at 0V bias and 22C unless otherwise specified.
Detector Model Number
Active Size
Diameter
(mm)
Operating
Temp.
(°C)
50% Cutoff
Wavelength*
(µm)
Peak
Responsivity
(A/W)
min
Capacitance
(pF)
@ 0V
typ
5741-E4.441-E3.611+E0.511+E5.360+E4.560+E7.252.04.2-U052R-C66-1ET32J
05241-E3.731-E
0.111+E1.611+E3.460+E0.260+E0.105.04.2-U005R-C66-1ET32J
000131-E3.131-E9.111+E7.611+E7.450+E0.650+E0.300.14.2-M10R-C66-1ET32J
000431-E2.331-E6.411+E5.511+E9.350+E0.140+E0.500.24.2-M20R-C66-1ET32J
000931-E9.531-E4.811+E5.411+E2.340+E0.340+E5.100.34.2-M30R-C66-1ET32J
5741-E0.241-E8.221+E1.111+E8.770+E4.270+E2.152.04.2-U052R-C66-2ET32J
05241-E3.341-E6.421+E3.111+E5.960+E0.960+E5.405.04.2-U005R-C66-2ET32J
0
00141-E7.541-E1.821+E6.121+E1.160+E0.360+E5.100.14.2-M10R-C66-2ET32J
000431-E5.131-E1.221+E2.111+E6.850+E6.450+E3.200.24.2-M20R-C66-2ET32J
000931-E8.231-E9.311+E6.911+E8.650+E3.140+E3.600.34.2-M30R-C66-2ET32J
5751-E5.941-E3.121+E3.221+E6.170+E6.970+E8.452.04.2-U052R-C66-3ET32J
05241-E4.141-E0.221+E2.321+E2.270+E4.470+E2.205.04.2-U005R-C66-3ET32J
000141-E4.241-E4.321+E7.321+E6.270+E5.160+E5.700.14.2-M10
R-C66-3ET32J
000441-E6.641-E3.921+E7.221+E9.160+E0.260+E0.100.24.2-M20R-C66-3ET32J
000931-E3.131-E9.121+E0.221+E4.150+E0.550+E5.200.34.2-M30R-C66-3ET32J
5751-E1.551-E2.721+E3.421+E1.380+E0.380+E5.152.04.2-U052R-NC3-4ET32J
05251-E7.741-E1.121+E7.521+E1.480+E3.170+E6.605.04.2-U005R-NC3-4ET32J
000141-E3.141-E8.121+E1.721+E0.570+E0.570+E5.200.14.2-M10R-NC3-4ET32J
000441-E6.341-E0.521+E0.521+E5.360+E2.660+E1
.300.24.2-M20R-NC3-4ET32J
000941-E0.741-E9.921+E8.321+E7.260+E6.150+E0.800.34.2-M30R-NC3-4ET32J
NEP (W/rt-Hz)
@ peak wavelength
max typ
Shunt Impedence
(Ohm)
min typ
Peak D*
(cmHz
1/2
/W)
@ 1KHz
min typ
-20 2.34+/-0.10 1.15
1.15
1.15
1.15
-40
-85
-65
2.27+/-0.10
2.29+/-0.10
2.31+/-0.10
Detector Model Number
Active Size
Diameter
(mm)
Operating
Temp.
(°C)
50% Cutoff
Wavelength*
(µm)
Peak
Responsivity
(A/W)
min
Capacitance
(pF)
@ 0V
typ
5741-E3.831-E2.111+E7.211+E9.160+E4.150+E0.752.06.2-U052R-C66-1ET32J
05231-E4.131-E9.111+E2.311+E3.250+E2.550+E6.205.06.2-U005R-C66-1ET32J
000131-E5.231-E5.311+E6.311+E5.250+E6.140+E0.800.16.2-M10R-C66-1ET32J
000431-E1.631-E6.811+E9.211+E1.240+E6.240+E3.100.26.2-M20R-C66-1ET32J
0009
21-E2.121-E7.111+E3.211+E6.130+E0.730+E5.300.36.2-M30R-C66-1ET32J
5741-E9.341-E5.511+E7.511+E1.460+E0.660+E0.352.06.2-U052R-C66-2ET32J
05241-E9.541-E3.811+E6.711+E3.560+E6.260+E3.105.06.2-U005R-C66-2ET32J
000131-E1.131-E5.111+E4.811+E9.550+E0.850+E0.400.16.2-M10R-C66-2ET32J
000431-E7.231-E9.311+E5.611+E6.450+E2.140+E0.600.26.2-M20R-C66-2ET32J
000931-E5.531-E7.711+E9.411+E4.340+E0.340+E5.100.36.2-M30R-C
66-2ET32J
5741-E7.141-E4.221+E3.111+E3.970+E8.270+E4.152.06.2-U052R-C66-3ET32J
05241-E6.241-E6.321+E7.121+E2.170+E2.160+E0.605.06.2-U005R-C66-3ET32J
000141-E5.441-E3.621+E0.221+E4.160+E0.460+E0.200.16.2-M10R-C66-3ET32J
000431-E2.131-E7.121+E5.121+E1.150+E8.550+E9.200.26.2-M20R-C66-3ET32J
000931-E4.231-E4.321+E1.111+E9.750+E4.140+E0.700.36.2-M30R-C66-3ET32J
5751-E5.941-E3.121+E3.221+E7.170+E0.870+E0.452.
06.2-U052R-NC3-4ET32J
05241-E4.141-E0.221+E1.321+E2.270+E6.370+E8.105.06.2-U005R-NC3-4ET32J
000141-E5.241-E5.321+E6.321+E6.270+E2.160+E0.600.16.2-M10R-NC3-4ET32J
000441-E5.641-E2.921+E7.221+E9.160+E7.150+E5.800.26.2-M20R-NC3-4ET32J
000931-E3.131-E9.121+E0.221+E4.150+E0.450+E0.200.36.2-M30R-NC3-4ET32J
NEP (W/rt-Hz)
@ peak wavelength
max typ
Shunt Impedence
(Ohm)
min typ
Peak D*
(cmHz
1/2
/W)
@ 1KHz
min typ
-20 2.52+/-0.101.2
-40
-65
-85 2.43+/-0.10
2.45+/-0.10
1.2
1.2
2.48+/-0.101.2
TELEDYNE
JUDSON TECHNOLOGIES
A Teledyne Technologies Company 6/7
J22 and J23 SERIES
InGaAs PHOTODIODES
Operating Instructions
All dimensions are in inches. Detector (+) -- Anode Detector (-) -- Cathode
Standard Packages
C02
LD, LD2
18D
C12
C11
18I
3CN
Optional Packages
66C
5I
TELEDYNE
JUDSON TECHNOLOGIES
A Teledyne Technologies Company 7/7
TELEDYNE
JUDSON TECHNOLOGIES
A Teledyne Technologies Company
221 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936-9641
PHONE: 215-368-6901
FAX: 215-362-6107
www.teledynejudson.com
0.1
1
10
100
-60 -40 -20 0 20 40
Detector Temperature °C
Ratio (R
D
@T)/R
D
@22°C)
See Spec Table
for actual R
D
value at 22°C
Parameter Min Max Units
Uniformity of Response
@ Peak over Area (25°C) ±2 %
Storage Temperature -55 +80 °C
Operating Temperature -55 +60 °C
Figure 2
Typical D* vs Wavelength
Figure 3
Typical Change in Shunt Resistance vs Temperature
1E+10
1E+11
1E+12
1E+13
0.8 1.2 1.6 2 2.4 2.8 3.2
Wavelength(µm)
D* (cmHz1/2W-1)
1.9µm
2.2µm
2.6µm
Information in this document is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omission.
Specifications are subject to change without notice.
