VS-30BQ040-M3
www.vishay.com Vishay Semiconductors
Revision: 18-Mar-15 1Document Number: 93332
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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High Performance Schottky Rectifier, 3.0 A
FEATURES
Very low forward voltage drop
Guard ring for enhanced ruggedness and long
term reliability
Small foot print, surface mountable
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-30BQ040-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package SMC
IF(AV) 3.0 A
VR40 V
VF at IF0.46 V
IRM 30 mA at 125 °C
TJ max. 150 °C
Diode variation Single die
EAS 6.0 mJ
Cathode Anode
SMC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 3.0 A
VRRM 40 V
IFSM tp = 5 μs sine 2000 A
VF3.0 Apk, TJ = 125 °C 0.46 V
TJRange -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30BQ040-M3 UNITS
Maximum DC reverse voltage VR40 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV)
50 % duty cycle at TL = 115 °C, rectangular waveform 3.0
A
50 % duty cycle at TL = 104 °C, rectangular waveform 4.0
Maximum peak one cycle
non-repetitive surge current IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated VRRM applied
1600
10 ms sine or 6 ms rect. pulse 90
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.0 A, L = 12 mH 6.0 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A
VS-30BQ040-M3
www.vishay.com Vishay Semiconductors
Revision: 18-Mar-15 2Document Number: 93332
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
Notes
(1) thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1)
3 A TJ = 25 °C 0.57
V
6 A 0.76
3 A TJ = 125 °C 0.46
6 A 0.64
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VR
0.5 mA
TJ = 125 °C 30
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 230 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 3.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg -55 to +150 °C
Maximum thermal resistance,
junction to lead RthJL (2)
DC operation
12
°C/W
Maximum thermal resistance,
junction to ambient RthJA 46
Approximate weight 0.24 g
0.008 oz.
Marking device Case style SMC (similar to DO-214AB) 3F
dPtot
dTJ
------------- 1
RthJA
--------------<
VS-30BQ040-M3
www.vishay.com Vishay Semiconductors
Revision: 18-Mar-15 3Document Number: 93332
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
0.1
1
10
IF - Instantaneous Forward Current (A)
VF - Forward Voltage Drop (V)
0.6 0.8 1.0
0.40.20
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
10
100
1000
10 000
100 000
IR - Reverse Current (µA)
VR - Reverse Voltage (V)
10 30 40200
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10
100
1000
CT - Junction Capacitance (pF)
VR - Reverse Voltage (V)
515 30
40 45
352010025
TJ = 25 °C
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
100110
Single pulse
(thermal resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
VS-30BQ040-M3
www.vishay.com Vishay Semiconductors
Revision: 18-Mar-15 4Document Number: 93332
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
60
80
100
120
140
160
Allowable Lead Temperature (°C)
IF(AV) - Average Forward Current (A)
0.5 2.5 4.53.51.51.0 3.0 4.02.00
Square wave (D = 0.50)
80 % rated VR applied
See note (1)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
0
1.0
1.5
0.5
2.5
2.0
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
0.5 1.5 3.0 4.5
3.5 4.02.01.002.5
DC
RMS limit
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
1
10
1000
100
10 000
I
FSM
- Non-Repetitive Surge Current (A)
t
p
- Square Pulse Duration (µs)
10 000100010010
At any rated load condition
and with rated VRRM applied
following surge
VS-30BQ040-M3
www.vishay.com Vishay Semiconductors
Revision: 18-Mar-15 5Document Number: 93332
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-30BQ040-M3/9AT 9AT 3500 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95402
Part marking information www.vishay.com/doc?95403
Packaging information www.vishay.com/doc?95404
2- Current rating
3- B = SMC
4- Q = Schottky “Q” series
5- Voltage rating (040 = 40 V)
1- Vishay Semiconductors product suffix
Device code
51 32 4 6
VS- 30 B Q 040 -M3
- Environmental digit:
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
6
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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