VS-30BQ040-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3.0 A FEATURES * Very low forward voltage drop Cathode * Guard ring for enhanced ruggedness and long term reliability Anode * Small foot print, surface mountable * High frequency operation SMC * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package SMC IF(AV) 3.0 A VR 40 V DESCRIPTION VF at IF 0.46 V IRM 30 mA at 125 C TJ max. 150 C Diode variation Single die EAS 6.0 mJ The VS-30BQ040-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 s sine VF 3.0 Apk, TJ = 125 C TJ Range VALUES UNITS 3.0 A 40 V 2000 A 0.46 V -55 to +150 C VS-30BQ040-M3 UNITS 40 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES 50 % duty cycle at TL = 115 C, rectangular waveform 3.0 50 % duty cycle at TL = 104 C, rectangular waveform 4.0 UNITS Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 1.0 A, L = 12 mH 6.0 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A Repetitive avalanche current 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 1600 A 90 Revision: 18-Mar-15 Document Number: 93332 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ040-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 3A Maximum forward voltage drop VFM (1) TJ = 25 C 6A 3A TJ = 125 C 6A Maximum reverse leakage current IRM Maximum junction capacitance CT Typical series inductance Maximum voltage rate of change LS dV/dt TJ = 25 C VR = Rated VR TJ = 125 C VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 C Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.57 0.76 V 0.46 0.64 0.5 mA 30 230 pF 3.0 nH 10 000 V/s VALUES UNITS -55 to +150 C Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to lead RthJL (2) Maximum thermal resistance, junction to ambient RthJA TEST CONDITIONS 12 DC operation 0.24 Approximate weight Marking device C/W 46 g 0.008 Case style SMC (similar to DO-214AB) oz. 3F Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB Revision: 18-Mar-15 Document Number: 93332 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ040-M3 Vishay Semiconductors 10 100 000 TJ = 150 C IR - Reverse Current (A) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 C TJ = 125 C TJ = 25 C 1 10 000 TJ = 125 C TJ = 100 C 1000 TJ = 75 C 100 TJ = 50 C 10 TJ = 25 C 0.1 0 0.2 0.4 0.6 0.8 1 1.0 0 10 VF - Forward Voltage Drop (V) 20 30 40 VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 C 100 10 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 100 10 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 1 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 0.01 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 18-Mar-15 Document Number: 93332 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ040-M3 Vishay Semiconductors 160 2.5 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 140 Average Power Loss (W) Allowable Lead Temperature (C) www.vishay.com 120 100 Square wave (D = 0.50) 80 % rated VR applied 80 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 2.0 1.5 RMS limit 1.0 DC 0.5 See note (1) 0 60 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 10 000 1000 100 10 At any rated load condition and with rated VRRM applied following surge 1 10 100 1000 10 000 tp - Square Pulse Duration (s) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 18-Mar-15 Document Number: 93332 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ040-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 B Q 040 -M3 1 2 3 4 5 6 1 - Vishay Semiconductors product suffix 2 - Current rating 3 - B = SMC 4 - Q = Schottky "Q" series 5 - Voltage rating (040 = 40 V) 6 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-30BQ040-M3/9AT PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 9AT 3500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95402 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 Revision: 18-Mar-15 Document Number: 93332 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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