Standard Power MOSFETs File Number 2314 IRFD110, IRFD111, IRFD112, IRFD113 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 0.8 A and 1 A, 60 V - 100 V N-CHANNEL ENHANCEMENT MODE lpsion = 0.6 Q and 0.8 Q Oo Features: u SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics a High input impedance u Majority carrier device $s 92CS-33741 TERMINAL DIAGRAM The IRFO110, IRFD111, IRFD112, and IRFD113 are n-channel enhancement-mode silicon-gate power field- effect transistors designed for applications such as switch- TERMINAL DESIGNATION ing regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching tran- sistors requiring high speed and low gate-drive power. | | s These types can be operated directly from integrated circuits. (| G The IRFD-types are supplied in the 4-pin DIP package. a TOP VIEW 4-PIN DIP ABSOLUTE MAXIMUM RATINGS Parameter iRFD110 IRFD111 IRFD112 IRFD113 Units Vos Drain - Source Voitage 100 60 100 60 Vv Vor - Drain - Gate Voltage (Ras = 20 kN) 100 60 100 60 v lo @ Ta = 25C Continuous Drain Current 1.0 1.0 0.8 08 A lom Pulsed Drain Current 8.0 8.0 6.4 6.4 A Vos Gate - Source Voltage +20 v Po @ Ta = 26C Max. Power Dissipation 1.0 (See Fig. 13) Ww Linear Derating Factor 0,008 (See: Fig. 13) wre lim inductive Current, Clamped (See Fig. 14 and 15) L = 100 wH A 8.0 | 8.0 6.4 64 te Storage famporatu va ange 55 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 3-209Standard Power MOSFETs IRFD110, |RFD111, IRFD112, IRFD113 Electrical Characteristics @Tc = 25C (Unless Otherwise Specified) Parameter Type Min, Typ. | Max. Units Test Conditions BVpss _ Drain - Source Breakdown Voltage IRFD110,2] 100 - _ v Vos = OV IRFD111.31 60 = = v Ip = 250nA VGsSith) Gate Threshold Voltage ALL 2.0 - 4.0 Vv Vos = Ves. Ip = 250nA Igss Gate - Source Leakage Forward ALL _ - 500 nA Ves = 20V less Gate - Source Leakage Reverse ALL = = -500 nA Ves = -20V ipss = Zero Gate Voltage Drain Current ALL = = 250 pA Vos = Max. Rating, Vgg = OV 4 1000 BA Vps = Max. Rating x 0.8. Vgg = OV, Tce = 125C lp(on) On-State Drain Current @ IRFD110,1} 1.0 _ - A IRFD112,3] 0.8 = A Vos > IDton) * RoSion) max. VGs = 10V Rpsion) Static Drain-Source On-State IRFD110, 1 _ 0.5 0.6 9 Resistance V6 = 10V, Ip = 0.84 IRFD112, 3 _ 0.6 0.8 2 Ofs Forward Transconductance @ ALL 0.8 1.2 - S$ (uv) Vos > 'pion) * Boston) max.:'p = 0-84 Ciss Input Capacitance ALL 135 pF Vas = OV, Vpg = 25V, f = 1.0 MHz Coss _ Output Capacitance ALL = 80 pF See Fig. 9 Criss Reverse Transfer Capacitance ALL =~ 20 pF tajon} Turn-On Delay Time ALL _ 10 20 ns Vop = 9.5 BVoss;_ Ip = 0.8A, Z, = 500 ty Rise Time ALL _ 15 25 ns See Fig. 16 tdlotf) Turn-Off Delay Time ALL - 15 25 ns {MOSFET switching times are essentially ty Fail Time ALL __ 10 20 ns independent of operating temperature.) Qa, Total Gate Charge _ Vas = 10V, Ip = 4.0A, Vpg = 0.8 Max. Rating. 9 {Gate-Source Plus Gate-Drain} ALL 5.0 70 nc See Fig. 17 for test circuit. {Gate charge is essentially independent of operating temperature.) Qgs Gate-Source Charge ALL ~ 2.0 3.0 nc Qgq Gate-Drain {Miller) Charge ALL - 7.0 nN ac Lp Anternal Drain Inductance ALL _ 4.0 - nH Measure from the Modified MOSFET drain lead, 2.0mm symbo! showing the (0.08 in.) from internal device package to center of inductances. die. 2 a ls internal Source inductance ALL - 6.0 - nH Measured from the source lead, 2.0mm (0.08 in.) from package te source bonding pad. G Thermal Resistance [ Rihua _ Junction-to-Ambient I ALL | = I = | 4120 | Cw I Free Air Operation | Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRFD110, 1 ~ ~ 1.0 A Modified MOSFET symbol (Bocly Diode) showing the integral D IRFD112, 3 = - 0.8 A reverse P-N junction rectifier. Ism Pulse Source Current 1RFO110, 1 _ _ 8.0 A (Body Diode) $ (RFOI1Z, 3 ~ ~ 6.4 A Vsp Diode Forward Vottage @ (RFD110,4] _ 2.5 Vv Ta = 28C, Ig = 1.04, Veg = OV IRFO112, 3 = 2.0 Vv Ta = 28C, Ig = 0.84, Ves = ov ter Reverse Recovery Time ALL = 100 - ns Ty = 150C, Ip = 1.0A, dig/dt = 100A/us Orr Reverse Recovered Charge ALL = 0.2 ~ ae Ty = 180C, Ip = 1.0A, dipidt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. @Ty = 28C to 180C. @Pulse Test: Pulse width < 300us, Duty Cycle < 2%. 3-210_Standard Power MOSFETs IRFD110, IRFD111, IRFD112, IRFD113 5.0 us PULSE Ty = -550C co) = Ty = 2500 3 a { 1 ce a Ty = 1269C yw vy a = = = = 30 PULSE z B ee = = Vos > Dian) X RDS(on) max. 8 a z z 20 5 5 6 3 lo 0 0 10 20 30 40 50 0 2 4 6 8 10 Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vgs, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typicat Output Characteristics Fig. 2 Typical Transfer Characteristics 10 5.0 z _ 20 a a = 10 = # < = cE = 05 = & = Z RATION IN THIS AREA = 0.2 fIS LIMITED BY Rogan) Da = 2 01 x << a a S 0.05 ~ 2 0.02 Ty = 150C MAX. SINGLE PULSE 0.01 IRFD111, 0.005 0 i 2 3. 4 5 05 10 2 5 10 20 50 100 200 500 Vps, DRAIN-TO-SOQURCE VOLTAGE (VOLTS) Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area 40 10 3.6 us 1 ; Vos > 'D(an) X Ros(on) max. aw 5 = 32 & a = z a = = az 28 = a 5 2 a 24 a = cs = Us 3 Ss 2.0 z= 10 3 =< 2 = = S15 = Ty = 25C a aw z y= 1250 @ 5 Ty = 180C = 12 S = a * = 08 = ~ 2 a4 0 01 6 ' 2 3 4 5 0 02 04 O08 08 10 12 14 #16 18 20 Ip, ORAIN CURRENT (AMPERES) . Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 5 Typical Transconductance Vs. Drain Current Fig. 6 Typical Source-Drain Diode Forward Voltage 3-211Standard Power MOSFETs IRFD110, IRFD111, IRFD112, [IRFD113 3-212 4.25 1.20 115 1.10 ORAIN-TO-SOURCE BREAKDOWN VOLTAGE aq 1.05 May N =z 1.00 = ec 2 0.95 0.90 g (0.85 ao > = 0.80 0.75 60 -40 -20 0 20 46 60 80 100 120 140 Ty SUNCTION TEMPERATURE (C) Fig. 7 Breakdown Voltage Vs. Temperature 500 =0 t= MHz 400 Cigg = Cys + Coy, Cus SHORTED Crsg = Cog Cos C, : gs yd g vom Cae Coe i zs c a 300 = Cys + Cog = < r a < a <= 200 o 100 Coss 0 10 20 30 40 50 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 9 Typical Capacitance Vs. Drain-to-Source Voltage Roston) MEASURED WITH CURRENT PULSE 2.0 us DURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL.) RpS{on}. ORAIN-TO-SOURCE ON RESISTANCE (OHMS) 0 2 4 6 8 Ip, ORAIN CURRENT (AMPERES) Fig. 11 Typical On-Resistance Vs. Drain Current 2.50 2.25 2.00 1.76 1.50 1.25 1.00 0.75 Rps(on), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED} 0.50 0.25 0 60 -40 -20 O 2 40 #60 880 6100 6120) 140 Ty, JUNCTION TEMPERATURE (c) Fig. 8 Normalized On-Resistance Vs. Temperature 20 Vinco= a Vos = 80 Vps,= 80V, IRFD110, 12 Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) wo Ss Ip = 4A FOR TEST CIRCUIT SEE FIGURE 17 a 2 4 6 8 10 Qg, TOTAL GATE CHARGE nC) Fig. 10 Typical Gate Charge Vs. Gate-to-Source Voltage 1.0 08 (RFD110, 11 0.6 04 tp, ORAIN CURRENT (AMPERES) 02 0 25 50 78 100 126 150 Ta, AMBIENT TEMPERATURE (C) Fig. 12 Maximum Drain Current Vs. Case TemperaturePp, POWER DISSIPATION (WATTS) 1.2 Renya S 120 C/W 0.8 N 0.4 02 N N Qa 20 40 60 a0 100 120 140 Ta, AMBIENT TEMPERATURE (C} Fig. 13 -- Power Vs. Temperature Derating Curve Fig. 15 Clamped Inductive Waveforms 12v BATTERY 1 o.2ut a Standard Power MOSFETs IRFD110, IRFD111, IRFD112, IRFD113 VARY ty TO OBTAIN REQUIRED PEAK |, puT Veg = 1V beth W E}=0.5BVpss Ep + 0.75 BVpgg Fig. 14 Clamped Inductive Test Circuit ADJUST Ry. TO OBTAIN SPECIFIED Ip PULSE GENERATOR r | { TO SCOPE 0.0182 | HIGH FREQUENCY Lo SHUNT Fig. 16 Switching Time Test Circuit Vos CURRENT {ISOLATED REGULATOR SUPPLY) SAME TYPE AS DUT yo Vos CURRENT = CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 17 ~ Gate Charge Test Circuit 3-213