1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulate d in a SOD882D leadless ultra
small Surface-Mounted Device (SMD) plastic package with visible and solderable side
pads.
1.2 Features and benefits
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conve rs ion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
Ultra high-speed switching
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
[2] Pulse test: tp300 μs; δ≤0.02.
PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
Rev. 1 — 10 May 2011 Product data sheet
Forward current: IF0.5 A AEC-Q101 qualified
Reverse voltage: VR20 V Solderable side pads
Low forward voltage: VF440 mV Package height typ. 0.37 mm
Ultra small and leadless SMD plastic
package
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IF(AV) average forward
current square wave; δ= 0.5; f = 20 kHz
Tamb 85 °C[1] --0.5A
Tsp 130 °C --0.5A
IRreverse current VR= 10 V - 300 600 μA
VRreverse voltage - - 20 V
VFforward voltage IF=500mA [2] - 365 440 mV
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Product data sheet Rev. 1 — 10 May 2011 2 of 14
NXP Semiconductors PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
[1] For SOD882D binary marking code description, see Figure 1.
4.1 Binary marking code description
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode [1]
2 anode
Transparent
top view
21
sym00
1
12
Tabl e 3. Ordering information
Type number Package
Name Description Version
PMEG2005AELD - leadless ultra small plastic package; 2 terminals;
body 1 ×0.6 ×0.4 mm SOD882D
Table 4. Marking codes
Type number Marking code[1]
PMEG2005AELD 1001 0000
Fig 1. SOD882D binary marking code description
VENDOR CODE
MARKING CODE
(EXAMPLE)
CATHODE BAR READING DIRECTION
READING DIRECTION
READING EXAMPLE:
0111
1011
006aac47
7
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Product data sheet Rev. 1 — 10 May 2011 3 of 14
NXP Semiconductors PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2] Tj=25°C prior to surge.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRreverse voltage - 20 V
IF(AV) average forward current square wave; δ= 0.5;
f = 20 kHz
Tamb 85 °C[1] -0.5A
Tsp 130 °C-0.5A
IFRM repetitive peak forward
current tp1 ms; δ≤0.25 - 2.5 A
IFSM non-repetitive peak
forward current square wave; tp=8ms [2] -3A
Ptot total power dissipation Tamb 25 °C[3] -340mW
[1] -660mW
[4] - 1000 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature 55 +150 °C
Tstg storage temperature 65 +150 °C
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Product data sheet Rev. 1 — 10 May 2011 4 of 14
NXP Semiconductors PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Soldering point of cathode tab.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1][2] --370K/W
[1][3] --190K/W
[1][4] --125K/W
Rth(j-sp) ther mal resistance from
junction to solder point [5] --50K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from ju nc tio n to ambient as a function of pulse duration; typical values
006aac557
tp (s)
10–3 102103
10110–2 10–1
102
103
Zth(j-a)
(K/W)
10
duty cycle =
10.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
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Product data sheet Rev. 1 — 10 May 2011 5 of 14
NXP Semiconductors PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
FR4 PCB, mounting pad for cathode 1 cm2
Fig 3. Transient thermal impedance from ju nc tio n to ambient as a function of pulse duration; typical values
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from ju nc tio n to ambient as a function of pulse duration; typical values
006aac558
tp (s)
10–3 102103
10110–2 10–1
102
103
Zth(j-a)
(K/W)
10
0.02
0.01
00.05
0.1
0.2
0.25 0.33
0.5 0.75
duty cycle =
1
006aac559
tp (s)
10–3 102103
10110–2 10–1
102
103
Zth(j-a)
(K/W)
10
duty cycle =
0.02
0.01
0
0.05 0.2
0.25
0.1
0.33 0.5
0.75 1
PMEG2005AELD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 10 May 2011 6 of 14
NXP Semiconductors PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
7. Characteristics
[1] Pulse test: tp300 μs; δ≤0.02.
[2] When switched from IF= 10 mA to IR=10mA; R
L= 100 Ω; measured at IR=1mA.
Table 7. Characteristics
Tamb =25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VFforward voltage [1]
IF=0.1mA - 20 60 mV
IF=1mA - 65 110 mV
IF= 10 mA - 125 190 mV
IF= 100 mA - 210 290 mV
IF= 500 mA - 365 440 mV
IRreverse current VR= 10 V - 300 600 μA
VR= 20 V - 500 1500 μA
Cddiode capacitance VR=1V; f=1MHz - 19 25 pF
trr reverse recovery
time [2] -6-ns
(1) Tj= 150 °C
(2) Tj= 125 °C
(3) Tj=85°C
(4) Tj=25°C
(5) Tj=40 °C
(1) Tj= 150 °C
(2) Tj= 125 °C
(3) Tj=85°C
(4) Tj=25°C
(5) Tj=40 °C
Fig 5. Forward current as a function of forward
voltage; typical values Fig 6. Reverse current as a function of reverse
voltage; typical values
006aac560
10–2
10–3
1
10–1
10
IF
(A)
10–4
VF (V)
0 0.80.60.2 0.4
(1)
(2)
(3) (4) (5)
006aac561
1
10–1
10–2
10–3
10–4
10–5
10–6
IR
(A)
10–7
VR (V)
02015510
(1) (2)
(3)
(4)
(5)
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Product data sheet Rev. 1 — 10 May 2011 7 of 14
NXP Semiconductors PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
f=1MHz; T
amb =25°C
Fig 7. Diod e capacitance as a function of reverse voltage; typical values
Tj= 150 °C
(1) δ=0.1
(2) δ=0.2
(3) δ=0.5
(4) δ=1
Tj= 125 °C
(1) δ=1
(2) δ=0.9
(3) δ=0.8
(4) δ=0.5
Fig 8. A v e ra ge forward power dissipatio n as a
function of average forward cur rent; typical
values
Fig 9. Average reverse power dissipation as a
function of reverse voltage; typica l va lues
VR (V)
02015510
006aac562
10
20
30
Cd
(pF)
0
006aac563
IF(AV) (A)
0.00 0.750.500.25
0.2
0.1
0.3
0.4
PF(AV)
(W)
0.0
(1) (2)
(3) (4)
VR (V)
0108462
006aac564
0.5
1.0
1.5
PR(AV)
(W)
0.0
(1)
(2)
(3)
(4)
PMEG2005AELD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 10 May 2011 8 of 14
NXP Semiconductors PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
FR4 PCB, standard footprint
Tj= 150 °C
(1) δ=1; DC
(2) δ= 0.5; f = 20 kHz
(3) δ= 0.2; f = 20 kHz
(4) δ= 0.1; f = 20 kHz
FR4 PCB, mounting pad for cathode 1 cm2
Tj= 150 °C
(1) δ=1; DC
(2) δ= 0.5; f = 20 kHz
(3) δ= 0.2; f = 20 kHz
(4) δ= 0.1; f = 20 kHz
Fig 10. Average forward current as a function of
ambient temperature ; typi cal values Fig 11. Average forward current as a function of
ambient temperature; typical values
Ceramic PCB, Al2O3, standard footprint
Tj= 150 °C
(1) δ=1; DC
(2) δ= 0.5; f = 20 kHz
(3) δ= 0.2; f = 20 kHz
(4) δ= 0.1; f = 20 kHz
Tj= 150 °C
(1) δ=1; DC
(2) δ= 0.5; f = 20 kHz
(3) δ= 0.2; f = 20 kHz
(4) δ= 0.1; f = 20 kHz
Fig 12. Average forward current as a function of
ambient temperature ; typi cal values Fig 13. A verage forward current as a function of
solder point temperature; typical values
Tamb (°C)
0 50 100 150 1751257525
006aac565
0.25
0.50
0.75
IF(AV)
(A)
0.00
(1)
(2)
(3)
(4)
Tamb (°C)
0 50 100 150 1751257525
006aac566
0.25
0.50
0.75
IF(AV)
(A)
0.00
(1)
(2)
(3)
(4)
Tamb (°C)
0 50 100 150 1751257525
006aac567
0.25
0.50
0.75
IF(AV)
(A)
0.00
(1)
(2)
(3)
(4)
Tsp (°C)
0 50 100 150 1751257525
006aac568
0.25
0.50
0.75
IF(AV)
(A)
0.00
(1)
(2)
(3)
(4)
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Product data sheet Rev. 1 — 10 May 2011 9 of 14
NXP Semiconductors PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
8. Test information
The current ratings for the typical waveforms as shown in Figure 10, 11, 12 and 13 are
calculated according to the equations: with IM defined as peak current,
at DC, and with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in auto motive applications.
(1) IR=1mA
Fig 14. Reverse recovery time test circuit and waveforms
trr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
×
R
S
R
S
= 50 ΩI
F
D.U.T.
R
i
= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
Fig 15. Duty cycle definition
t
1
t
2
P
t
006aaa812
duty cycle δ =
t
1
t
2
IFAV() IMδ×=
IRMS IFAV()
=IRMS IMδ×=
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Product data sheet Rev. 1 — 10 May 2011 10 of 14
NXP Semiconductors PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
Fig 16. Package outline SOD882D
10-08-06Dimensions in mm
0.65
0.30
0.22
0.30
0.22
0.55
0.45
0.65
0.55
0.4
max
1.05
0.95
2
cathode marking on top side
1
Table 8. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
10000
PMEG2005AELD SOD882D 2 mm pitch, 8 mm tape and reel -315
Reflow soldering is the only recommended soldering method.
Fig 17. Reflow soldering SOD882D
solder lands
solder resist
solder paste
sod882d_
fr
Dimensions in mm
1.4
0.2
0.3
0.4
1
1.3
0.8
(2×)
0.6
(2×)
0.7
(2×)
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Product data sheet Rev. 1 — 10 May 2011 11 of 14
NXP Semiconductors PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMEG2005AELD v.1 20110510 Product data sheet - -
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Product data sheet Rev. 1 — 10 May 2011 12 of 14
NXP Semiconductors PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the shor t data sheet, the
full data sheet shall pre va il.
Product specificatio nThe information and data provided in a Product
data sheet shall define the specification of the product as agreed be tween
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
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Notwithstanding any damages that customer might incur for any reason
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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authorized or warranted to be suit able for use in life support, life-critical or
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NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party custo m er(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
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agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or inte llectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specif ication for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
PMEG2005AELD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 10 May 2011 13 of 14
NXP Semiconductors PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics se ctions of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 May 2011
Document identifier: PMEG2005AELD
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
4.1 Binary marking code description. . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Packing information . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14