MRF1570NT1 MRF1570FNT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 470 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applica-
tions in 12.5 volt mobile FM equipment.
•Specified Performance @ 470 MHz, 12.5 Volts
Output Power — 70 Watts
Power Gain — 11.5 dB
Efficiency — 60%
•Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive
Features
•Excellent Thermal Stability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Broadband - Full Power Across the Band: 135-175 MHz
400-470 MHz
•Broadband Demonstration Amplifier Information Available Upon Request
•200_C Capable Plastic Package
•N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
•In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS +0.5, +40 Vdc
Gate- Source Voltage VGS ± 20 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD165
0.5
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case RθJC 0.29 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M2 (Minimum)
Charge Device Model C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22- A113, IPC/JEDEC J -STD - 020 1 260 °C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF1570N
Rev. 9, 6/2008
Freescale Semiconductor
Technical Data
470 MHz, 70 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1366-05, STYLE 1
TO-272-8 WRAP
PLASTIC
MRF1570NT1
MRF1570NT1
MRF1570FNT1
CASE 1366A-03, STYLE 1
TO-272-8
PLASTIC
MRF1570FNT1
Freescale Semiconductor, Inc., 2008. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
IDSS — — 1 µA
On Characteristics
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 0.8 mAdc)
VGS(th) 1 — 3 Vdc
Drain- Source On- Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on) — — 1 Vdc
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Ciss — — 500 pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Coss — — 250 pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Crss — — 35 pF
RF Characteristics (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz
Gps — 11.5 — dB
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz
η— 60 — %
MRF1570NT1 MRF1570FNT1
3
RF Device Data
Freescale Semiconductor
Figure 1. 135 - 175 MHz Broadband Test Circuit Schematic
RF
OUTPUT
DUT
+
VGG
B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products
C1, C32, C37, C43 270 pF, 100 mil Chip Capacitors
C2, C20, C21 33 pF, 100 mil Chip Capacitors
C3 18 pF, 100 mil Chip Capacitor
C4, C5 30 pF, 100 mil Chip Capacitors
C6, C7 180 pF, 100 mil Chip Capacitors
C8, C9 150 pF, 100 mil Chip Capacitors
C10, C15 300 pF, 100 mil Chip Capacitors
C11, C16, C33, C39 10 µF, 50 V Electrolytic Capacitors
C12, C17, C34, C40 0.1 µF, 100 mil Chip Capacitors
C13, C18, C35, C41 1000 pF, 100 mil Chip Capacitors
C14, C19, C36, C42 470 pF, 100 mil Chip Capacitors
C22, C23 110 pF, 100 mil Chip Capacitors
C24, C25 68 pF, 100 mil Chip Capacitors
C26, C27 120 pF, 100 mil Chip Capacitors
C28, C29 24 pF, 100 mil Chip Capacitors
C30, C31 27 pF, 100 mil Chip Capacitors
C38, C44 240 pF, 100 mil Chip Capacitors
L1, L2 17.5 nH, 6 Turn Inductors, Coilcraft
L3, L4 5 nH, 2 Turn Inductors, Coilcraft
L5, L6, L7, L8 1 Turn, #18 AWG, 0.33″ ID Inductors
L9, L10 3 Turn, #16 AWG, 0.165″ ID Inductors
N1, N2 Type N Flange Mounts
R1, R2 25.5 Ω Chip Resistors (1206)
R3, R4 9.3 Ω Chip Resistors (1206)
Z1 0.32″ x 0.080″ Microstrip
Z2, Z3 0.46″ x 0.080″ Microstrip
Z4, Z5 0.34″ x 0.080″ Microstrip
Z6, Z7 0.45″ x 0.080″ Microstrip
Z8, Z9, Z10, Z11 0.28″ x 0.240″ Microstrip
Z12, Z13 0.39″ x 0.080″ Microstrip
Z14, Z15 0.27″ x 0.080″ Microstrip
Z16, Z17 0.25″ x 0.080″ Microstrip
Z18, Z19 0.29″ x 0.080″ Microstrip
Z20, Z21 0.14″ x 0.080″ Microstrip
Z22 0.32″ x 0.080″ Microstrip
Board 31 mil Glass Teflon
VGG +
RF
INPUT
VDD
+
VDD
+
C14 C13 C12 C11 C10
B1
R1
R3
Z2 L1 Z4 L3 Z6 Z8
C1
C6
C8
Z1
C2 C3
C4
R4
Z3 L2 Z5 L4 Z7 Z9
C7 C9
C5
R2
B2
C19 C18 C17 C16 C15
C38 C37 C36 C35 C34 C33
Z10 Z12 Z14 Z16 L5 L7 Z18
L9
C20 C22 C24 C26 C28 C30
C21 C23 C25 C27
Z11 Z13 Z15 Z17 L6 L8 Z19
Z21
Z20
Z22
B3
B4
B5
B6
C29 C31
C44 C43 C42 C41 C40 C39
L10
C32
4
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
Figure 2. 135 - 175 MHz Broadband Test Circuit Component Layout
C11
B1
C12 C13 C14
C1 C2
C3
C4
C5
L1
L2
C6
C7
L3
L4
C10
C15
C8
C9
R3
R4
R1
R2
C16
B2
C17 C18 C19 C44
C38
L9
L10
C37
C20
C21
C43
C23
C22
C24
C26
C27
C25
L5
L6
C28
C29
L7
L8
C30
C31 C32
C33
C39
B5
B6
B3
B4
C35 C34C36
C41 C40C42
VDD
GND
VGG
GND
MRF1570T1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
TYPICAL CHARACTERISTICS, 135 - 175 MHz
135 MHz
175 MHz
150 MHz
6
0
100
0
Pin, INPUT POWER (WATTS)
Figure 3. Output Power versus Input Power
Pout , OUTPUT POWER (WATTS)
VDD = 12.5 Vdc
80
60
40
20
123 45 80
−20
0
10
Pout, OUTPUT POWER (WATTS)
Figure 4. Input Return Loss versus Output Power
−5
−10
−15
135 MHz
175 MHz
155 MHz
VDD = 12.5 Vdc
90706050403020
INPUT RETURN LOSS (dB)IRL,
MRF1570NT1 MRF1570FNT1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS, 135 - 175 MHz
90
12
18
10
Pout, OUTPUT POWER (WATTS)
Figure 5. Gain versus Output Power
G
ps, P
O
WER
G
AIN (dB)
20 30 40 50 60 70 80
135 MHz
175 MHz
155 MHz
VDD = 12.5 Vdc
17
16
15
14
13
90
20
70
10
Pout, OUTPUT POWER (WATTS)
Figure 6. Drain Efficiency versus Output Power
, DRAIN EFFICIENCY (%)η
60
50
40
30
20 30 40 50 60 70 80
135 MHz
175 MHz
155 MHz
VDD = 12.5 Vdc
1600
50
90
400
IDQ, BIASING CURRENT (mA)
Figure 7. Output Power versus Biasing Current
Pout , OUTPUT POWER (WATTS)
135 MHz
175 MHz
155 MHz
VDD = 12.5 Vdc
Pin = 36 dBm
80
70
60
600 800 140012001000
0
100
IDQ, BIASING CURRENT (mA)
Figure 8. Drain Efficiency versus Biasing Current
, DRAIN EFFICIENCY (%)η
1600400
135 MHz
175 MHz
155 MHz
VDD = 12.5 Vdc
Pin = 36 dBm
600 800 140012001000
80
60
40
20
15
0
100
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Output Power versus Supply Voltage
Pout , OUTPUT POWER (WATTS)
135 MHz
175 MHz
155 MHz
Pin = 36 dBm
IDQ = 800 mA
80
60
40
20
14131211 15
0
100
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 10. Drain Efficiency versus Supply Voltage
, DRAIN EFFICIENCY (%)η
80
60
40
20
135 MHz
175 MHz
155 MHz
Pin = 36 dBm
IDQ = 800 mA
11 12 13 14
6
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
Figure 11. 400 - 470 MHz Broadband Test Circuit Schematic
B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products
C1, C9, C15, C32 270 pF, 100 mil Chip Capacitors
C2, C3 7.5 pF, 100 mil Chip Capacitors
C4 5.1 pF, 100 mil Chip Capacitor
C5, C6 180 pF, 100 mil Chip Capacitors
C7, C8 47 pF, 100 mil Chip Capacitors
C10, C16, C37, C42 120 pF, 100 mil Chip Capacitors
C11, C17, C33, C38 10 µF, 50 V Electrolytic Capacitors
C12, C18, C34, C39 470 pF, 100 mil Chip Capacitors
C13, C19, C35, C40 1200 pF, 100 mil Chip Capacitors
C14, C20, C36, C41 0.1 µF, 100 mil Chip Capacitors
C21, C22 33 pF, 100 mil Chip Capacitors
C23, C24 27 pF, 100 mil Chip Capacitors
C25, C26 15 pF, 100 mil Chip Capacitors
C27, C28 2.2 pF, 100 mil Chip Capacitors
C29, C30 6.2 pF, 100 mil Chip Capacitors
C31 1.0 pF, 100 mil Chip Capacitor
L1, L2, L3, L4 1 Turn, #18 AWG, 0.085″ ID Inductors
L5, L6 2 Turn, #16 AWG, 0.165″ ID Inductors
N1, N2 Type N Flange Mounts
R1, R2 25.5 Ω Chip Resistors (1206)
R3, R4 10 Ω Chip Resistors (1206)
Z1 0.240″ x 0.080″ Microstrip
Z2 0.185″ x 0.080″ Microstrip
Z3, Z4 1.500″ x 0.080″ Microstrip
Z5, Z6 0.150″ x 0.240″ Microstrip
Z7, Z8 0.140″ x 0.240″ Microstrip
Z9, Z10 0.140″ x 0.240″ Microstrip
Z11, Z12 0.150″ x 0.240″ Microstrip
Z13, Z14 0.270″ x 0.080″ Microstrip
Z15, Z16 0.680″ x 0.080″ Microstrip
Z17, Z18 0.320″ x 0.080″ Microstrip
Z19 0.380″ x 0.080″ Microstrip
Board 31 mil Glass Teflon
RF
OUTPUT
DUT
+
VGG
VGG +
RF
INPUT
VDD
+
VDD
+
C14 C13 C12 C11 C9
B1
R1
R3
Z2
Z3 Z5 Z7
C1
C7
C5
Z1
C2 C3 C4
R4
Z4 Z6 Z8
C8
C6
R2
B2
C20 C19 C18 C17 C15
C37C10 C36 C35 C34 C33
Z9 Z11 Z13 Z15 L1 L3 Z17
L5
C21 C23 C27 C29
C22 C24
Z10 Z12 Z14 Z16 L2 L4 Z18
Z19
B3
B4
B5
B6
C28 C30
C42 C41 C40 C39 C38
L6
C32
C16
C31
C25
C26
MRF1570NT1 MRF1570FNT1
7
RF Device Data
Freescale Semiconductor
Figure 12. 400 - 470 MHz Broadband Test Circuit Component Layout
C11
B1
C12 C13 C14
C1 C2
C3
C4
C9
C15
C5
C6
R3
R4
R1
R2
C17
B2
C18 C19 C20
L5
L6
C37
C21
C22
C42
C26
C25
C23
C24
L1
L2
C27
C28
L3
L4
C29
C30
C32
C33
C38
B5
B6
B3
B4
C35 C36C34
C40 C41C39
VDD
GND
VGG
GND
C10
C16
C7
C8
C31
MRF1570T1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
TYPICAL CHARACTERISTICS, 400 - 470 MHz
0
100
0
400 MHz
Pin, INPUT POWER (WATTS)
Figure 13. Output Power versus Input Power
Pout , OUTPUT POWER (WATTS)
VDD = 12.5 Vdc
80
60
40
20
12345678
440 MHz
470 MHz
80
−20
0
0
Pout, OUTPUT POWER (WATTS)
Figure 14. Input Return Loss versus Output Power
INPUT RETURN LOSS (dB)IRL,
−5
−10
−15
10 20 30 40 50 60 70
400 MHz
VDD = 12.5 Vdc
440 MHz
470 MHz
8
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
TYPICAL CHARACTERISTICS, 400 - 470 MHz
80
5
17
0
Pout, OUTPUT POWER (WATTS)
Figure 15. Gain versus Output Power
Gps, POWER GAIN (dB)
400 MHz
VDD = 12.5 Vdc
440 MHz
470 MHz
15
13
11
9
7
10 20 30 40 50 60 70 80
0
70
0
Pout, OUTPUT POWER (WATTS)
Figure 16. Drain Efficiency versus Output Power
, DRAIN EFFICIENCY (%)η
60
50
40
30
20
10
10 20 30 40 50 60 70
400 MHz
VDD = 12.5 Vdc
440 MHz
470 MHz
1600
50
90
400
IDQ, BIASING CURRENT (mA)
Figure 17. Output Power versus Biasing Current
Pout , OUTPUT POWER (WATTS)
VDD = 12.5 Vdc
Pin = 38 dBm
400 MHz
440 MHz
470 MHz
80
70
60
600 800 1000 1200 1400
0
100
Figure 18. Drain Efficiency versus Biasing Current
, DRAIN EFFICIENCY (%)η
VDD = 12.5 Vdc
Pin = 38 dBm
400 MHz
440 MHz
470 MHz
1600400
IDQ, BIASING CURRENT (mA)
600 800 1000 1200 1400
80
60
40
20
40
100
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 19. Output Power versus Supply Voltage
Pout , OUTPUT POWER (WATTS)
Pin = 38 dBm
IDQ = 800 mA
400 MHz
440 MHz
470 MHz
90
80
70
60
50
11 12 13 14 15
Figure 20. Drain Efficiency versus Supply Voltage
, DRAIN EFFICIENCY (%)η
0
100
10
VDD, SUPPLY VOLTAGE (VOLTS)
Pin = 38 dBm
IDQ = 800 mA
400 MHz
440 MHz
470 MHz
80
40
60
20
11 12 13 14 15
MRF1570NT1 MRF1570FNT1
9
RF Device Data
Freescale Semiconductor
Figure 21. 450 - 520 MHz Broadband Test Circuit Schematic
B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products
C1, C8, C14, C28 270 pF, 100 mil Chip Capacitors
C2, C3 10 pF, 100 mil Chip Capacitors
C4, C5 180 pF, 100 mil Chip Capacitors
C6, C7 47 pF, 100 mil Chip Capacitors
C9, C15, C33, C38 120 pF, 100 mil Chip Capacitors
C10, C16, C29, C34 10 µF, 50 V Electrolytic Capacitors
C11, C17, C30, C35 470 pF, 100 mil Chip Capacitors
C12, C18, C31, C36 1200 pF, 100 mil Chip Capacitors
C13, C19, C32, C37 0.1 µF, 100 mil Chip Capacitors
C20, C21 22 pF, 100 mil Chip Capacitors
C22, C23 20 pF, 100 mil Chip Capacitors
C24, C25, C26, C27 5.1 pF, 100 mil Chip Capacitors
L1, L2 1 Turn, #18 AWG, 0.115″ ID Inductors
L3, L4 2 Turn, #16 AWG, 0.165″ ID Inductors
N1, N2 Type N Flange Mounts
R1, R2 1.0 kΩ Chip Resistors (1206)
R3, R4 10 Ω Chip Resistors (1206)
Z1 0.40″ x 0.080″ Microstrip
Z2, Z3 0.26″ x 0.080″ Microstrip
Z4, Z5 1.35″ x 0.080″ Microstrip
Z6, Z7 0.17″ x 0.240″ Microstrip
Z8, Z9 0.12″ x 0.240″ Microstrip
Z10, Z11 0.14″ x 0.240″ Microstrip
Z12, Z13 0.15″ x 0.240″ Microstrip
Z14, Z15 0.18″ x 0.172″ Microstrip
Z16, Z17 1.23″ x 0.080″ Microstrip
Z18, Z19 0.12″ x 0.080″ Microstrip
Z20 0.40″ x 0.080″ Microstrip
Board 31 mil Glass Teflon
RF
OUTPUT
DUT
+
VGG
VGG +
RF
INPUT
VDD
+
VDD
+
C13 C12 C11 C10 C8
B1
R1
R3
Z4 Z6 Z8
C1
C6
C4
Z1
R4
Z5 Z7 Z9
C7
C5
R2
B2
C19 C18 C17 C16 C14
C33C9 C32 C31 C30 C29
Z10 Z12 Z14 Z16 L1 Z18
L3
C20 C22 C26
C21 C23
Z11 Z13 Z15 Z17 L2 Z19
Z20
B3
B4
B5
B6
C27
C38 C37 C36 C35 C34
L4
C28
C15
C24
C25
C2
C3
Z2
Z3
10
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
Figure 22. 450 - 520 MHz Broadband Test Circuit Component Layout
C10
B1
C13 C12 C11
C1 C2
C3
C8
C14
C4
C5
R3
R4
R1
R2
C16
B2
C19 C18 C17
L3
L4
C33
C20
C21
C38
C25
C24
C22
C23
L1
L2
C26
C27
C28
C29
C34
B5
B6
B3
B4
C31 C32C30
C36 C37C35
VDD
GND
VGG
GND
C9
C15
C6
C7
MRF1570T1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
TYPICAL CHARACTERISTICS, 450 - 520 MHz
0
100
0
Pin, INPUT POWER (WATTS)
Figure 23. Output Power versus Input Power
Pout , OUTPUT POWER (WATTS)
VDD = 12.5 Vdc
500 MHz
450 MHz
470 MHz
520 MHz
80
60
40
20
123456 78 90
−25
0
0
Pout, OUTPUT POWER (WATTS)
Figure 24. Input Return Loss versus Output Power
INPUT RETURN LOSS (dB)IRL,
VDD = 12.5 Vdc
500 MHz
450 MHz
470 MHz
520 MHz
−5
−10
−15
−20
10 20 30 40 50 70 8060
MRF1570NT1 MRF1570FNT1
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS, 450 - 520 MHz
9
15
Pout, OUTPUT POWER (WATTS)
Figure 25. Gain versus Output Power
Gps, POWER GAIN (dB)
900
VDD = 12.5 Vdc
500 MHz
450 MHz
470 MHz
520 MHz
10 20 30 40 50 70 8060
14
13
12
11
10
20
70
Pout, OUTPUT POWER (WATTS)
Figure 26. Drain Efficiency versus Output Power
, DRAIN EFFICIENCY (%)η
90
VDD = 12.5 Vdc
500 MHz
470 MHz
450 MHz
520 MHz
10 20 30 40 50 70 8060
60
50
40
30
1600
50
90
IDQ, BIASING CURRENT (mA)
Figure 27. Output Power versus Biasing Current
Pout , OUTPUT POWER (WATTS)
500 MHz
450 MHz
470 MHz
520 MHz
VDD = 12.5 Vdc
Pin = 38 dBm
80
70
60
400 800 1200 1600
40
80
IDQ, BIASING CURRENT (mA)
Figure 28. Drain Efficiency versus Biasing Current
500 MHz
450 MHz
470 MHz
520 MHz
VDD = 12.5 Vdc
Pin = 38 dBm
70
60
50
400 800 1200
, DRAIN EFFICIENCY (%)η
30
100
Figure 29. Output Power versus Supply Voltage
Pout , OUTPUT POWER (WATTS)
10
VDD, SUPPLY VOLTAGE (VOLTS)
Pin = 38 dBm
IDQ = 800 mA
450 MHz
470 MHz
11 12 13 14 15
90
80
70
60
50
40
520 MHz
500 MHz
40
80
Figure 30. Drain Efficiency versus Supply Voltage
, DRAIN EFFICIENCY (%)η
10
VDD, SUPPLY VOLTAGE (VOLTS)
Pin = 38 dBm
IDQ = 800 mA
470 MHz
11 12 13 14 15
520 MHz
500 MHz
450 MHz
70
60
50
12
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
TYPICAL CHARACTERISTICS
210
1011
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
1010
108
MTTF FACTOR (HOURS X AMPS2)
90 110 130 150 170 190100 120 140 160 180 200
Figure 31. MTTF Factor versus Junction Temperature
109
MRF1570NT1 MRF1570FNT1
13
RF Device Data
Freescale Semiconductor
Zin = Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
Notes: Impedance Zin was measured with input terminated at 50 W.
Impedance ZOL was measured with output terminated at 50 W.
Figure 32. Series Equivalent Input and Output Impedance
f
MHz
Zin
Ω
ZOL*
Ω
450 0.94 -j1.12 0.61 -j1.14
VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W
470 1.03 -j1.17 0.62 -j1.12
500 0.95 -j1.71 0.75 -j1.03
520 0.62 -j1.74 0.77 -j0.97
f
MHz
Zin
Ω
ZOL*
Ω
400 0.92 -j0.71 1.05 - j1.10
VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W
440 1.12 -j1.11 0.83 -j1.45
470 0.82 -j0.79 0.59 -j1.43
f
MHz
Zin
Ω
ZOL*
Ω
135 2.8 +j0.05 0.65 +j0.42
VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W
155 3.9 +j0.34 1.01 +j0.63
175 2.4 - j0.47 0.71 +j0.37
Zin
f = 175 MHz
ZOL*
f = 470 MHz Zo = 5 Ω
Zin
ZOL*
Zin ZOL
*
Input
Matching
Network
Device
Under Test
Output
Matching
Network
f = 175 MHz
f = 470 MHz
f = 520 MHz
Zo = 5 Ω
Zin
ZOL*f = 450 MHz
f = 135 MHz
f = 135 MHz
f = 400 MHz
f = 400 MHz
f = 450 MHz
f = 520 MHz
14
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MRF1570NT1 MRF1570FNT1
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common - source, RF power, N-Channel
enhancement mode, Lateral Metal- Oxide Semiconductor
Field-Effect Transistor (MOSFET). Freescale Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and char-
acteristics of FETs.
This surface mount packaged device was designed pri-
marily for VHF and UHF mobile power amplifier applications.
Manufacturability is improved by utilizing the tape and reel
capability for fully automated pick and placement of parts.
However, care should be taken in the design process to in-
sure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs in-
clude high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate- to - drain (Cgd), and
gate - to - source (Cgs). The PN junction formed during fab-
rication of the RF MOSFET results in a junction capacitance
from drain-to-source (Cds). These capacitances are charac-
terized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships be-
tween the inter-terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF ap-
plications.
Drain
Cds
Source
Gate
Cgd
Cgs
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full- on condition. This on - resistance, RDS(on), occurs
in the linear region of the output characteristic and is speci-
fied at a specific gate- source voltage and drain current. The
drain-source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally re-
quired for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the de-
vice.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate-to-source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions can
result in turn-on of the devices due to voltage build-up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate-to-source. If gate protec-
tion is required, an external zener diode is recommended.
Using a resistor to keep the gate - to - source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate-drain capacitance. If the
gate - to - source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate-threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain cur-
rent flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 800 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may generally be just a simple re-
sistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some de-
gree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
MRF1570NT1 MRF1570FNT1
15
RF Device Data
Freescale Semiconductor
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large - signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region. See
Freescale Application Note AN215A, “RF Small-Signal
Design Using Two -Port Parameters” for a discussion of two
port network theory and stability.
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
•AN211A: Field Effect Transistors in Theory and Practice
•AN215A: RF Small-Signal Design Using Two- Port Parameters
•AN721: Impedance Matching Networks Applied to RF Power Transistors
•AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
•AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
•AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
9June 2008 •Corrected specified performance values for power gain and efficiency on p. 1 to match typical performance
values in the functional test table on p. 2
•Replaced Case Outline 1366-04 with 1366-05, Issue E, p. 1, 16 -18. Removed Drain -ID label from View
Y- Y. Added Pin 9 designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min,
respectively.
•Replaced Case Outline 1366A- 02 with 1366A- 03, Issue D, p. 1, 19-21. Removed Drain-ID label from View
Y- Y. Removed Surface Alignment tolerance label for cross hatched section on View Y-Y. Added Pin 9
designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min, respectively. Added
dimension E3. Restored dimensions F and P designators to DIM column on Sheet 3.
•Added Product Documentation and Revision History, p. 22
MRF1570NT1 MRF1570FNT1
23
RF Device Data
Freescale Semiconductor
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