1N5221B...1N5267B
TELEFUNKEN Semiconductors
Rev . A1, 12-Dec-94 1 (4)
Silicon Z–Diodes
Features
D
Very sharp reverse characteristic
D
Very high stability
D
Low reverse current level
D
VZ–tolerance ± 5%
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
Tj = 25
_
C
Parameter Test Conditions Type Symbol Value Unit
Power dissipation TL
x
75
°
C PV500 mW
Z–current IZPV/VZmA
Junction temperature Tj200
°
C
Storage temperature range Tstg –65...+200
°
C
Maximum Thermal Resistance
Tj = 25
_
C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=9.5mm (3/8”), TL=constant RthJA 300 K/W
Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA VF1.1 V
1N5221B...1N5267B
TELEFUNKEN Semiconductors
Rev . A1, 12-Dec-94
2 (4)
Type VZnom 1) IZT for rzjT rzjk at IZK IR at VRTKVZ
VmA
W W
mA
m
A V %/K
1N5221B 2.4 20 < 30 < 1200 0.25 < 100 1.0 < –0.085
1N5222B 2.5 20 < 30 < 1250 0.25 < 100 1.0 < –0.085
1N5223B 2.7 20 < 30 < 1300 0.25 < 75 1.0 < –0.080
1N5224B 2.8 20 < 30 < 1400 0.25 < 75 1.0 < –0.080
1N5225B 3.0 20 < 29 < 1600 0.25 < 50 1.0 < –0.075
1N5226B 3.3 20 < 28 < 1600 0.25 < 25 1.0 < –0.070
1N5227B 3.6 20 < 24 < 1700 0.25 < 15 1.0 < –0.065
1N5228B 3.9 20 < 23 < 1900 0.25 < 10 1.0 < –0.060
1N5229B 4.3 20 < 22 < 2000 0.25 < 5 1.0 < +0.055
1N5230B 4.7 20 < 19 < 1900 0.25 < 5 2.0 < +0.030
1N5231B 5.1 20 < 17 < 1600 0.25 < 5 2.0 < +0.030
1N5232B 5.6 20 < 11 < 1600 0.25 < 5 3.0 < +0.038
1N5233B 6.0 20 < 7 < 1600 0.25 < 5 3.5 < +0.038
1N5234B 6.2 20 < 7 < 1000 0.25 < 5 4.0 < –0.045
1N5235B 6.8 20 < 5 < 750 0.25 < 3 5.0 < +0.050
1N5236A 7.5 20 < 6 < 500 0.25 < 3 6.0 < +0.058
1N5237B 8.2 20 < 8 < 500 0.25 < 3 6.5 < +0.062
1N5238B 8.7 20 < 8 < 600 0.25 < 3 6.5 < +0.065
1B5239B 9.1 20 < 10 < 600 0.25 < 3 7.0 < +0.068
1N5240B 10 20 < 17 < 600 0.25 < 3 8.0 < +0.075
1N5241B 11 20 < 22 < 600 0.25 < 2 8.4 < +0.076
1N5242B 12 20 < 30 < 600 0.25 < 1 9.1 < +0.077
1N5243B 13 9.5 < 13 < 600 0.25 < 0.5 9.9 < +0.079
1N5244B 14 9.0 < 15 < 600 0.25 < 0.1 10 < +0.082
1N5245B 15 8.5 < 16 < 600 0.25 < 0.1 11 < +0.082
1N5246B 16 7.8 < 17 < 600 0.25 < 0.1 12 < +0.083
1N5247B 17 7.4 < 19 < 600 0.25 < 0.1 13 < +0.084
1N5248B 18 7.0 < 21 < 600 0.25 < 0.1 14 < +0.085
1N5249B 19 6.6 < 23 < 600 0.25 < 0.1 14 < +0.086
1N5250B 20 6.2 < 25 < 600 0.25 < 0.1 15 < +0.086
1N5251B 22 5.6 < 29 < 600 0.25 < 0.1 17 < +0.087
1N5252B 24 5.2 < 33 < 600 0.25 < 0.1 18 < +0.088
1N5253B 25 5.0 < 35 < 600 0.25 < 0.1 19 < +0.089
1N5254B 27 4.6 < 41 < 600 0.25 < 0.1 21 < +0.090
1N5221B...1N5267B
TELEFUNKEN Semiconductors
Rev . A1, 12-Dec-94 3 (4)
Type VZnom 1) IZT for rzjT rzjk at IZK IR at VRTKVZ
VmA
W W
mA
m
A V %/K
1N5255B 28 4.5 < 44 < 600 0.25 < 0.1 21 < +0.091
1N5256B 30 4.2 < 49 < 600 0.25 < 0.1 23 < +0.091
1N5257B 33 3.8 < 58 < 700 0.25 < 0.1 25 < +0.092
1N5258B 36 3.4 < 70 < 700 0.25 < 0.1 27 < +0.093
1B5259B 39 3.2 < 80 < 800 0.25 < 0.1 30 < +0.094
1N5260B 43 3.0 < 93 < 900 0.25 < 0.1 33 < +0.095
1N5261B 47 2.7 < 105 < 1000 0.25 < 0.1 36 < +0.095
1N5262B 51 2.5 < 125 < 1100 0.25 < 0.1 39 < +0.096
1N5263B 56 2.2 < 150 < 1300 0.25 < 0.1 43 < +0.096
1B5264B 60 2.1 < 170 < 1400 0.25 < 0.1 46 < +0.097
1N5265B 62 2.0 < 185 < 1400 0.25 < 0.1 47 < +0.097
1N5266B 68 1.8 < 230 < 1600 0.25 < 0.1 52 < +0.097
1N5267B 75 1.7 < 270 < 1700 0.25 < 0.1 56 < +0.098
1) Based on dc measurement at thermal equilibrium;
lead length = 9.5 mm (3/8 ”);
thermal resistance of heat sink = 30 K/W.
Dimensions in mm
Cathode Identification
∅ 1.7 max.
∅ 0.55 max.
3.9 max.26 min.
technical drawings
according to DIN
specifications
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3g 26 min.
1N5221B...1N5267B
TELEFUNKEN Semiconductors
Rev . A1, 12-Dec-94
4 (4)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
