1N5221B...1N5267B Silicon Z-Diodes Features D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ-tolerance 5% Applications Voltage stabilization 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions TL 75C Type x Symbol PV IZ Tj Tstg Value 500 PV/VZ 200 -65...+200 Unit mW mA C C Symbol RthJA Value 300 Unit K/W Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=9.5mm (3/8"), TL=constant Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 Type Symbol VF Min Typ Max 1.1 Unit V 1 (4) 1N5221B...1N5267B Type 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236A 1N5237B 1N5238B 1B5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 2 (4) VZnom 1) V 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 IZT mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 5.2 5.0 4.6 for rzjT rzjk < 30 < 30 < 30 < 30 < 29 < 28 < 24 < 23 < 22 < 19 < 17 < 11 <7 <7 <5 <6 <8 <8 < 10 < 17 < 22 < 30 < 13 < 15 < 16 < 17 < 19 < 21 < 23 < 25 < 29 < 33 < 35 < 41 < 1200 < 1250 < 1300 < 1400 < 1600 < 1600 < 1700 < 1900 < 2000 < 1900 < 1600 < 1600 < 1600 < 1000 < 750 < 500 < 500 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 W W at IZK mA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 IR mA < 100 < 100 < 75 < 75 < 50 < 25 < 15 < 10 <5 <5 <5 <5 <5 <5 <3 <3 <3 <3 <3 <3 <2 <1 < 0.5 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 at VR V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10 11 12 13 14 14 15 17 18 19 21 TKVZ %/K < -0.085 < -0.085 < -0.080 < -0.080 < -0.075 < -0.070 < -0.065 < -0.060 < +0.055 < +0.030 < +0.030 < +0.038 < +0.038 < -0.045 < +0.050 < +0.058 < +0.062 < +0.065 < +0.068 < +0.075 < +0.076 < +0.077 < +0.079 < +0.082 < +0.082 < +0.083 < +0.084 < +0.085 < +0.086 < +0.086 < +0.087 < +0.088 < +0.089 < +0.090 TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 1N5221B...1N5267B Type 1N5255B 1N5256B 1N5257B 1N5258B 1B5259B 1N5260B 1N5261B 1N5262B 1N5263B 1B5264B 1N5265B 1N5266B 1N5267B 1) VZnom 1) V 28 30 33 36 39 43 47 51 56 60 62 68 75 IZT mA 4.5 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.1 2.0 1.8 1.7 for rzjT rzjk < 44 < 49 < 58 < 70 < 80 < 93 < 105 < 125 < 150 < 170 < 185 < 230 < 270 < 600 < 600 < 700 < 700 < 800 < 900 < 1000 < 1100 < 1300 < 1400 < 1400 < 1600 < 1700 W W at IZK mA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 IR mA < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 at VR V 21 23 25 27 30 33 36 39 43 46 47 52 56 TKVZ %/K < +0.091 < +0.091 < +0.092 < +0.093 < +0.094 < +0.095 < +0.095 < +0.096 < +0.096 < +0.097 < +0.097 < +0.097 < +0.098 Based on dc measurement at thermal equilibrium; lead length = 9.5 mm (3/8 "); thermal resistance of heat sink = 30 K/W. Dimensions in mm Cathode Identification 0.55 max. technical drawings according to DIN specifications 94 9366 1.7 max. Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 26 min. 3.9 max. 26 min. 3 (4) 1N5221B...1N5267B Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94