Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 12
1Publication Order Number:
MJD122/D
MJD122,
NJVMJD122T4G (NPN),
MJD127 (PNP)
Complementary Darlington
Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Surface Mount Replacements for 2N6040−2N6045 Series,
TIP120−TIP122 Series, and TIP125−TIP127 Series
Monolithic Construction With Built−in Base−Emitter Shunt Resistors
High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Pb−Free Packages are Available*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
x = 2 or 7
G = Pb−Free Package
DPAK
CASE 369C
STYLE 1
AYWW
J12xG
SILICON
POWER TRANSISTOR
8 AMPERES
100 VOLTS, 20 WATTS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device Package Shipping†
ORDERING INFORMATION
MJD122 DPAK 75 Units/Rail
MJD122T4 DPAK 2,500/Tape & Reel
MJD122T4G DPAK
(Pb−Free)
2,500/Tape & Reel
DPAK 75 Units/Rail
MJD127G DPAK
(Pb−Free)
75 Units/Rail
MJD127
DPAK 2,500/Tape & Reel
MJD127T4G DPAK
(Pb−Free)
2,500/Tape & Reel
http://onsemi.com
MJD122G DPAK
(Pb−Free)
75 Units/Rail
MJD127T4
COLLECTOR 2, 4
BASE
1
EMITTER 3
NJVMJD122T4G DPAK
(Pb−Free)
2,500/Tape & Reel
MJD122, NJVMJD122T4G (NPN),
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 100 Vdc
Collector−Base Voltage VCB 100 Vdc
Emitter−Base Voltage VEB 5 Vdc
Collector Current
Continuous
Peak
IC8
16
Adc
Base Current IB120 mAdc
Total Power Dissipation
@ TC = 25C
Derate above 25C
PD20
0.16
W
W/C
Total Power Dissipation (Note 1)
@ TA = 25C
Derate above 25C
PD1.75
0.014
W
W/C
Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance
Junction−to−Case
RqJC 6.25
C/W
Thermal Resistance
Junction−to−Ambient (Note1)
RqJA 71.4
C/W
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
MJD122, NJVMJD122T4G (NPN),
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
VCEO(sus) 100 −
Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ICEO −10
mAdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO −10
mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO −2
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 8 Adc, VCE = 4 Vdc)
hFE
1000
100
12,000
−
−
Collector−Emitter Saturation Voltage
(IC = 4 Adc, IB = 16 mAdc)
(IC = 8 Adc, IB = 80 mAdc)
VCE(sat)
−
−
2
4
Vdc
Base−Emitter Saturation Voltage (Note 2)
(IC = 8 Adc, IB = 80 mAdc)
VBE(sat) −4.5
Vdc
Base−Emitter On Voltage
(IC = 4 Adc, VCE = 4 Vdc)
VBE(on) −2.8
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)
|hfe|
4−
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD127
MJD122, NJVMJD122T4G
Cob
−
−
300
200
pF
Small−Signal Current Gain
(IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz)
hfe 300 −
−
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
Figure 1. Power Derating
25
25
T, TEMPERATURE (C)
050 75 100 125 150
20
15
10
5
PD, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
TATC
TA
SURFACE
MOUNT
TC
MJD122, NJVMJD122T4G (NPN),
http://onsemi.com
4
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
500
0.2
5000
2000
10,000
hFE, DC CURRENT GAIN
0.1 0.7
3000
0.5 1
20,000
1000
23 5
3
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.3 0.5 1 7352
1
IC, COLLECTOR CURRENT (AMP)
2
1.5
V, VOLTAGE (VOLTS)
3
2.5
1
0.5
0.2 30.1 0.70.3 1 5
10 20 30
200
300
0.3 7 10
0.7
0.5 7
21
0
PNP MJD127 NPN MJD122
IC, COLLECTOR CURRENT (AMP)
500
0.2
5000
2000
10,000
hFE, DC CURRENT GAIN
VCE = 4 V
TJ = 150C
7000
0.1 0.7
25C
-55C
3000
0.5 1
20,000
700
1000
23 5
3
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.3 0.5 1 735
4 A
IC = 2 A
2
TJ = 25C
1
IC, COLLECTOR CURRENT (AMP)
2
1.5
V, VOLTAGE (VOLTS)
3
2.5
1
0.5
TJ = 25C
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4 V
VCE(sat) @ IC/IB = 250
0.2 30.1 0.70.3 1 5
10 20 30
Figure 2. DC Current Gain
Figure 3. Collector Saturation Region
Figure 4. “On” Voltages
200
300
0.3 7 10
0.7
0.5 7
210
6 A
VCE = 4 V
TJ = 150C
25C
-55C
TJ = 25C
4 A
IC = 2 A 6 A
TJ = 25C
VBE @ VCE = 4 V
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
TYPICAL ELECTRICAL CHARACTERISTICS
MJD122, NJVMJD122T4G (NPN),
http://onsemi.com
5
V, TEMPERATURE COEFFICIENTS (mV/ C)
IC, COLLECTOR CURRENT (AMP)
0.2
*IC/IB hFE/3
0.1
-55C to 25C
123 10
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
10-1
0+0.4
, COLLECTOR CURRENT (A)IC
103
102
101
100
-0.2 -0.4 -0.6
TJ = 150C
100C
REVERSE FORWARD
25C
VCE = 30 V
105
+0.6 +0.2 -0.8 -1 -1.2 -1.4
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
10-1
, COLLECTOR CURRENT (A)IC
103
102
101
100
105
+5
-5
qVB for VBE 25C to 150C
qVC for VCE(sat)
Figure 5. Temperature Coefficients
VR, REVERSE VOLTAGE (VOLTS)
Cib
30 1 5 20 100
TJ = 25C
300
50
70
100
0.1 2 10 50
PNP
NPN
0.50.2
Figure 6. Collector Cut−Off Region
Figure 7. Small−Signal Current Gain
1
f, FREQUENCY (kHz)
100
210
500
5000
TC = 25C
VCE = 4 Vdc
IC = 3 Adc
3000
55020 100
10,000
200
300
200 500 1000
PNP MJD127 NPN MJD122
-4
-3
-2
-1
0
+4
+3
+2
+1
0.50.3 75
IC, COLLECTOR CURRENT (AMP)
0.20.1 1 2 30.50.3 75
2000
1000
10
50
20
30 PNP
NPN
200
Figure 8. Capacitance
V, TEMPERATURE COEFFICIENTS (mV/ C)
+5
-5
-4
-3
-2
-1
0
+4
+3
+2
+1
0.7 10
0-0.4 +0.2 +0.4 +0.6-0.6 -0.2 +0.8 +1 +1.2 +1.4
hfe , SMALL-SIGNAL CURRENT GAIN
C, CAPACITANCE (pF)
-55C to 25C
25C to 150C
*IC/IB hFE/3
25C to 150C
-55C to 25C
25C to 150C
-55C to 25C
*qVC for VCE(sat)
qVB for VBE
REVERSE FORWARD
VCE = 30 V
TJ = 150C
100C
25C
Cob
TYPICAL ELECTRICAL CHARACTERISTICS
MJD122, NJVMJD122T4G (NPN),
http://onsemi.com
6
t, TIME OR PULSE WIDTH (ms)
1
0.01 100
0
0.3
0.2
0.07
r(t), EFFECTIVE TRANSIENT
RqJC(t) = r(t) RqJC
RqJC = 6.25C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
THERMAL RESISTANCE (NORMALIZED)
0.7
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1 0.5 30.3
0.2 0.7 1
5
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25C
t, TIME (s)
3
2
0.7
0.5
0.3
0.2
ts
tf
tr
td @ VBE(off) = 0 V
PNP
NPN
Figure 9. Switching Times Test Circuit Figure 10. Switching Times
0.1
1
10752
Figure 11. Thermal Response
V2
A
PPROX
+8 V
0 8 k
SCOPE
VCC
-30 V
RC
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
25 ms
tr, tf 10 ns
DUTY CYCLE = 1%
+ 4 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
V1
A
PPROX
-12 V
TUT
RB
D1 120
0.07
0.05
0.1
0.01
IC, COLLECTOR CURRENT (AMP)
5
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2 BONDING WIRE LIMIT
THERMAL LIMIT
TC = 25C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
10 507
TJ = 150C
100m
1ms
dc
0.1
1
3
15
20
3020 70
CURVES APPLY BELOW RATED VCEO
5ms
Figure 12. Maximum Forward Bias
Safe Operating rea
321
10
0.05
0.02
0.03
500m
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
MJD122, NJVMJD122T4G (NPN),
http://onsemi.com
7
Figure 13. Darlington Schematic
BASE
EMITTER
COLLECTOR
8 k 120
PNP
BASE
EMITTER
COLLECTOR
8 k 120
NPN
MJD122, NJVMJD122T4G (NPN),
http://onsemi.com
8
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
ǒmm
inchesǓ
SCALE 3:1
b
D
E
b3
L3
L4
b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MJD122/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative