BD137-10 - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1997 Mar 04 1999 Apr 12

DISCRETE SEMICONDUCTORS

BD135; BD137; BD139

NPN power transistors

ook, halfpage

M3D100

1999 Apr 12 2

Philips Semiconductors Product speciﬁcation

NPN power transistors BD135; BD137; BD139

FEATURES

•High current (max. 1.5 A)

•Low voltage (max. 80 V).

APPLICATIONS

•Driver stages in hi-fi amplifiers and television circuits.

DESCRIPTION

NPN power transistor in a TO-126; SOT32 plastic

package. PNP complements: BD136, BD138 and BD140.

PINNING

PIN DESCRIPTION

1 emitter

2 collector, connected to metal part of

mounting surface

3 base

Fig.1 Simplified outline (TO-126; SOT32) and

symbol.

handbook, halfpage

MAM254

123 Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BD135 −45 V

BD137 −60 V

BD139 −100 V

VCEO collector-emitter voltage open base

BD135 −45 V

BD137 −60 V

BD139 −80 V

VEBO emitter-base voltage open collector −5V

Ccollector current (DC) −1.5 A

ICM peak collector current −2A

BM peak base current −1A

tot total power dissipation Tmb ≤70 °C−8W

stg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

1999 Apr 12 3

Philips Semiconductors Product speciﬁcation

NPN power transistors BD135; BD137; BD139

THERMAL CHARACTERISTICS

Note

1. Refer to TO-126; SOT32 standard mounting conditions.

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 100 K/W

Rth j-mb thermal resistance from junction to mounting base 10 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB =30V −−100 nA

IE= 0; VCB =30V; T

j= 125 °C−−10 µA

IEBO emitter cut-off current IC= 0; VEB =5V −−100 nA

hFE DC current gain VCE = 2 V; (see Fig.2)

IC= 5 mA 40 −−

= 150 mA 63 −250

IC= 500 mA 25 −−

DC current gain IC= 150 mA; VCE =2V;

(see Fig.2)

BD135-10; BD137-10; BD139-10 63 −160

BD135-16; BD137-16; BD139-16 100 −250

VCEsat collector-emitter saturation voltage IC= 500 mA; IB=50mA −−0.5 V

VBE base-emitter voltage IC= 500 mA; VCE =2V −−1V

Ttransition frequency IC= 50 mA; VCE =5V;

f = 100 MHz −190 −MHz

DC current gain ratio of the

complementary pairs IC= 150 mA; VCE=2V −1.3 1.6

hFE1

hFE2

-----------

1999 Apr 12 4

Philips Semiconductors Product speciﬁcation

NPN power transistors BD135; BD137; BD139

Fig.2 DC current gain; typical values.

handbook, full pagewidth

160

120

MBH729

10−1

hFE

1IC (mA)

10 103

102

VCE = 2 V

1999 Apr 12 5

Philips Semiconductors Product speciﬁcation

NPN power transistors BD135; BD137; BD139

PACKAGE OUTLINE

UNIT bpcDEe

LQ w

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.88

0.65

2.7

2.3 0.60

0.45 11.1

10.5 7.8

7.2 2.29

4.58 0.254

3.2

3.0

3.9

3.6

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

16.5

15.3 1.5

0.9

L1(1)

max

2.54

SOT32 TO-126 97-03-04

0 2.5 5 mm

scale

Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32

123

1999 Apr 12 6

Philips Semiconductors Product speciﬁcation

NPN power transistors BD135; BD137; BD139

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 Apr 12 7

Philips Semiconductors Product speciﬁcation

NPN power transistors BD135; BD137; BD139

NOTES

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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 12 Document order number: 9397 750 05576