5
500VCoolMOS™CEPowerTransistor
IPW50R190CE,IPP50R190CE
Rev.2.1,2015-08-20Final Data Sheet
4Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.51mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=500V,VGS=0V,Tj=25°C
VDS=500V,VGS=0V,Tj=150°C
Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.17
0.45
0.19
-ΩVGS=13V,ID=6.2A,Tj=25°C
VGS=13V,ID=6.2A,Tj=150°C
Gate resistance RG-3-Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1137 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 68 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
related1) Co(er) - 56 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time
related2) Co(tr) - 251 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 9.5 - ns VDD=400V,VGS=13V,ID=7.7A,
RG=3.4Ω
Rise time tr- 8.5 - ns VDD=400V,VGS=13V,ID=7.7A,
RG=3.4Ω
Turn-off delay time td(off) - 54 - ns VDD=400V,VGS=13V,ID=7.7A,
RG=3.4Ω
Fall time tf- 7.5 - ns VDD=400V,VGS=13V,ID=7.7A,
RG=3.4Ω
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 6.1 - nC VDD=400V,ID=7.7A,VGS=0to10V
Gate to drain charge Qgd - 24.5 - nC VDD=400V,ID=7.7A,VGS=0to10V
Gate charge total Qg- 47.2 - nC VDD=400V,ID=7.7A,VGS=0to10V
Gate plateau voltage Vplateau - 5.4 - V VDD=400V,ID=7.7A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS