2N2218-2N2219
2N2221-2N2222
January 1989
HIGH-SPEED SWITCHES
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-base Voltage (IE=0) 60 V
VCEO Collector-emitter Voltage (IB=0) 30 V
V
EBO Emitter-base Voltage (IC=0) 5 V
ICCollector Current 0.8 A
Ptot Total Power Dissipation at Tamb ≤25 °C
for 2N2218 and 2N2219
for 2N2221 and 2N2222
at Tcase ≤25 °C
for 2N2218 and 2N2219
for 2N2221 and 2N2222
0.8
0.5
3
1.8
W
W
W
W
Tstg Storage Temperature – 65 to 200 °C
TjJunction Temperature 175 °C
DESCRIPTION
TO-18
TO-39
INTERNAL SCHEMATIC DIAGRAM
2N2218/2N2219 approved to CECC 50002-
100, 2N2221/2N2222 approved to CECC
50002-101 available on request.
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18(for2N2221 and2N2222) metalcases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of collector cur-
rent, low leakage currents and low saturation volt-
ages.
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ELECTRICAL CHARACTERISTICS (Tamb =25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cutoff Current
(IE=0) VCB =50V
V
CB =50V Tamb =150°C10
10 nA
µA
IEBO Emitter Cutoff Current
(IC=0) VEB =3V 10 nA
V
(BR) CBO Colllector-base Breakdown
Voltage (IE=0) I
C=10µA60V
V
(BR)CEO* Collector-emitter Breakdown
Voltage (IB=0) I
C=10mA 30 V
V
(BR) EBO Emittter-base Breakdown
Voltage (IC=0) I
E=10µA5 V
V
CE (sat)* Collector-emitter Saturation
Voltage IC=150mA
IC=500mA IB=15mA
IB=50mA 0.4
1.6 V
V
VBE (sat)* Base-emitter Saturation
Voltage IC=150mA
IC=500mA IB=15mA
IB=50mA 1.3
2.6 V
V
hFE* DC Current Gain for 2N2218
IC= 0.1 mA
IC=1mA
IC=10mA
IC=150mA
IC=500mA
IC=150mA
for 2N2219
IC= 0.1 mA
IC=1mA
IC=10mA
IC=150mA
IC=500mA
IC=150mA
and 2N2221
VCE =10V
V
CE =10V
V
CE =10V
V
CE =10V
V
CE =10V
V
CE =1V
and 2N2222
VCE =10V
V
CE =10V
V
CE =10V
V
CE =10V
V
CE =10V
V
CE =1V
20
25
35
40
20
20
35
50
75
100
30
50
120
300
fTTransition Frequency IC=20mA
f = 100 MHz VCE = 20 V 250 MHz
CCBO Collector-base Capacitance IE=0
f = 100 kHz VCB =10V 8 pF
R
e(hie) Real Part of Input
Impedance IC=20mA
f = 300 MHz VCE =20V 60 Ω
*Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
THERMAL DATA
2N2218
2N2219 2N2221
2N2222
Rth j-case
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient Max
Max 50 °C/W
187.5 °C/W 83.3 °C/W
300 °C/W
2N2218-2N2219-2N2221-2N2222
2/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o45o
L
G
I
DA
F
E
B
H
C
TO-18 MECHANICAL DATA
0016043
2N2218-2N2219-2N2221-2N2222
3/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
L45
o
(typ.)
L
G
I
DA
F
E
B
H
TO39 MECHANICAL DATA
P008B
2N2218-2N2219-2N2221-2N2222
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information norfor any infringementof patents orother rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use ascriticalcomponentsin life supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France- Germany - Hong Kong -Italy -Japan - Korea- Malaysia - Malta - Morocco - The Netherlands -
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2N2218-2N2219-2N2221-2N2222
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