NPN SILICON PLANAR TRANSISTORS
Collector Emitter Voltage VCEO 45 V
Collector Base Voltage VCBO 45 V
Emitter Base Voltage VEBO 5V
Collector Current Continuous ICmA
Power Dissipation @ Ta=25ºC PDmW
mW/ ºC
Power Dissipation @ Tc=25ºC PDmW
mW/ ºC
Operating And Storage Junction
Temperature Range Tj, Tstg ºC
Junction to Ambient in free air Rth (j-a) ºC/W
Junction to Case Rth (j-c) ºC/W
ELECTRICAL CHARACTERISTICS (T
=25ºC unless specified otherwise)
Collector Emitter Voltage *VCEO IC=10mA, IB=0>45 >60 V
Collector Base Voltage VCBO IC=10µA, IE=0 >45 >60 V
Emitter Base Voltage VEBO IE=10µA, IC=0 >5 >6 V
Collector Cut Off Current
ICBO
VCB=45V, IE=0
<10 <2 nA
Collector Cut Off Current
ICEO
VCE=5V, IB=0
<2 <2 nA
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
<10 <2 nA
Collector Cut Off Current
ICES
VCE=45V, VBE=0
<10 <2 nA
VCE=45V, VBE=0, Ta=170ºC <10 <2 µA
Collector Emitter Saturation Voltage *VCE (sat) IC=10mA, IB=0.5mA <1.0 <0.5 V
Base Emitter Saturation Voltage *VBE (sat) IC=10mA, IB=0.5mA 0.7 - 0.9 0.7 - 0.9 V
DC Current Gain hFE IC=1µA, VCE=5V >60
IC=10µA, VCE=5V 100-300 100-300
IC=10µA, VCE=5V, Ta= -55ºC >20 >30
IC=500µA, VCE=5V >150
*IC=10mA, VCE=5V <600 <600
*Pulse Test: Pulse width <300 µµ s, Duty cycle< 2%
60
6
30
300
1.72
600
2N930A
60
3.42
- 65 to +200
583
292
Continental Device India Limited Data Sheet Page 1 of 4
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company