DISCRETE SEMICONDUCTORS DATA SHEET BTA216X series B Three quadrant triacs high commutation Product specification October 1997 1;3 Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. PINNING - SOT186A PIN BTA216X series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT BTA216X- 500B Repetitive peak off-state 500 voltages RMS on-state current 16 Non-repetitive peak on-state 140 current PIN CONFIGURATION 600B 600 800B 800 V 16 140 16 140 A A SYMBOL DESCRIPTION case 1 main terminal 1 2 main terminal 2 3 gate T2 T1 G 1 2 3 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) RMS on-state current ITSM Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power CONDITIONS MIN. - full sine wave; Ths 38 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s over any 20 ms period Storage temperature Operating junction temperature MAX. -500 5001 -600 6001 UNIT -800 800 V - 16 A - 140 150 98 100 A A A2s A/s - 2 5 5 0.5 A V W W -40 - 150 125 C C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. October 1997 1 Rev 1.200 1;3 Semiconductors Product specification Three quadrant triacs high commutation BTA216X series B ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink TYP. - MAX. UNIT 2500 V - 10 - pF MIN. TYP. MAX. UNIT - 55 4.0 5.5 - K/W K/W K/W MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- G- 2 2 2 18 21 34 50 50 50 mA mA mA T2+ G+ T2+ GT2- G- VD = 12 V; IGT = 0.1 A IT = 20 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C 0.25 - 31 34 30 31 1.2 0.7 0.4 0.1 60 90 60 60 1.5 1.5 0.5 mA mA mA mA V V V mA THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Rth j-a Thermal resistance junction to ambient full or half cycle with heatsink compound without heatsink compound in free air STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT Gate trigger current2 VD = 12 V; IT = 0.1 A IL Latching current IH VT VGT Holding current On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IGT = 0.1 A DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 C; IT(RMS) = 16 A; without snubber; gate open circuit ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s 1000 4000 - V/s - 28 - A/ms - 2 - s dIcom/dt tgt 2 Device does not trigger in the T2-, G+ quadrant. October 1997 2 Rev 1.200 1;3 Semiconductors Product specification Three quadrant triacs high commutation 25 BTA216X series B BT139 Ptot / W Ths(max) / C 20 25 BT139X IT(RMS) / A = 180 20 38 C 45 120 1 15 90 15 65 60 10 30 10 85 5 105 0 0 5 10 IT(RMS) / A 5 125 20 15 0 -50 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle. 1000 50 Ths / C 100 150 Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths. BTA216 ITSM / A 0 50 BT139 IT(RMS) / A 40 dI T /dt limit 30 100 20 I TSM IT T 10 time Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms. 150 ITSM / A 100 1.6 ITSM T 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths 38C. BT139 IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) BT136 1.4 time Tj initial = 25 C max 1.2 1 50 0.8 0.6 0 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. October 1997 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. 3 Rev 1.200 1;3 Semiconductors Product specification Three quadrant triacs high commutation 3 IGT(Tj) IGT(25 C) BTA216X series B 50 BTA216 T2+ G+ T2+ GT2- G- 2.5 Tj = 125 C Tj = 25 C typ 40 2 BT139 IT / A max Vo = 1.195 V Rs = 0.018 Ohms 30 1.5 20 1 10 0.5 0 0 -50 0 50 Tj / C 100 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. 3 IL(Tj) IL(25 C) 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. 10 TRIAC BT139 Zth j-hs (K/W) with heatsink compound without heatsink compound 2.5 1 unidirectional bidirectional 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 IH(Tj) IH(25C) 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. 3 0.1ms 1000 TRIAC dIcom/dt (A/ms) BTA216 2.5 100 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 1 20 150 60 80 Tj / C 100 120 140 Fig.12. Typical, critical rate of change of commutating current dIcom/dt versus junction temperature. Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. October 1997 40 4 Rev 1.200 1;3 Semiconductors Product specification Three quadrant triacs high commutation BTA216X series B MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.13. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1997 5 Rev 1.200 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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