DDATA SHEET
Product specification October 1997
DISCRETE SEMICONDUCTORS
BTA216X series B
Three quadrant triacs
high commutation
1;3 Semiconductors Product specification
Three quadrant triacs BTA216X series B
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a full pack, plastic envelope
intended for use in circuits where high BTA216X- 500B 600B 800B
static and dynamic dV/dt and high VDRM Repetitive peak off-state 500 600 800 V
dI/dt can occur. These devices will voltages
commutate the full rated rms current IT(RMS) RMS on-state current 16 16 16 A
at the maximum rated junction ITSM Non-repetitive peak on-state 140 140 140 A
temperature, without the aid of a current
snubber.
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 50016001800 V
voltages
IT(RMS) RMS on-state current full sine wave; - 16 A
Ths ≤ 38 ˚C
ITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 140 A
t = 16.7 ms - 150 A
I2tI
2t for fusing t = 10 ms - 98 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/μs
on-state current after dIG/dt = 0.2 A/μs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms - 0.5 W
period
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 125 ˚C
temperature
T1T2
G
123
case
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
October 1997 1 Rev 1.200
1;3 Semiconductors Product specification
Three quadrant triacs BTA216X series B
high commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 5.5 K/W
Rth j-a Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current2VD = 12 V; IT = 0.1 A
T2+ G+ 2 18 50 mA
T2+ G- 2 21 50 mA
T2- G- 2 34 50 mA
ILLatching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 31 60 mA
T2+ G- - 34 90 mA
T2- G- - 30 60 mA
IHHolding current VD = 12 V; IGT = 0.1 A - 31 60 mA
VTOn-state voltage IT = 20 A - 1.2 1.5 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
IDOff-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 1000 4000 - V/μs
off-state voltage exponential waveform; gate open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16 A; - 28 - A/ms
commutating current without snubber; gate open circuit
tgt Gate controlled turn-on ITM = 20 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs
time dIG/dt = 5 A/μs
2 Device does not trigger in the T2-, G+ quadrant.
October 1997 2 Rev 1.200
1;3 Semiconductors Product specification
Three quadrant triacs BTA216X series B
high commutation
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus heatsink temperature T
hs
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
hs
≤
38˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
0 5 10 15 20
0
5
10
15
20
25
= 180
120
90
60
30
BT139
IT(RMS) / A
Ptot / W Ths(max) / C
125
105
85
65
45
25
1
-50 0 50 100 150
0
5
10
15
20 BT139X
38 C
Ths / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms
10
100
1000 BTA216
T / s
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01 0.1 1 10
0
10
20
30
40
50 BT139
surge duration / s
IT(RMS) / A
1 10 100 1000
0
50
100
150 BT139
Number of cycles at 50Hz
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6 BT136
Tj / C
VGT(Tj)
VGT(25 C)
October 1997 3 Rev 1.200
1;3 SemiconductorsProduct specification
Three quadrant triacs BTA216X series B
high commutation
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of change of commutating
current dI
com
/dt versus junction temperature.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BTA216
Tj / C
T2+ G+
T2+ G-
T2- G-
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2 2.5 3
0
10
20
30
40
50 BT139
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ max
Vo = 1.195 V
Rs = 0.018 Ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3TRIAC
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10 BT139
tp / s
Zth j-hs (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp
P
t
D
unidirectional
bidirectional
with heatsink compound
without heatsink compound
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3TRIAC
Tj / C
IH(Tj)
IH(25C)
20 40 60 80 100 120 140
1
10
100
1000 BTA216
Tj / C
dIcom/dt (A/ms)
October 1997 4 Rev 1.200
1;3 Semiconductors Product specification
Three quadrant triacs BTA216X series B
high commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
123
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max. 19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
October 1997 5 Rev 1.200
NXP Semiconductors
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DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
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