DIM200WHS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/8
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Replaces issue December 2003, version FDS5673-2.3 FDS5673-3.0 January 2004
FEATURES
■10µs Short Circuit Withstand
■Non Punch Through Silicon
■Isolated Copper Base Plate
APPLICATIONS
■Inverters
■Motor Controllers
■Induction Heating
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200WHS17-A000 is a half bridge 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200WHS17-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
VCES 1700V
VCE(sat) * (typ) 2.7V
IC(max) 200A
IC(PK) (max) 400A
*(measured at the power busbars and not the auxiliary terminals)
DIM200WHS17-A000
Half Bridge IGBT Module
Fig. 1 Half bridge circuit diagram
Fig. 2 Module outline
Outline type code: W
(See package details for further information)
3(C1)
1(E1C2) 2(E2)
6(G
2
)
7(E
2
)
5(E
1
)
4(G
1
)
DIM200WHS17-A000
2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al2O3Clearance: 13mm
Baseplate material: Cu CTI (Critical Tracking Index): 175
Creepage distance: 24mm
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Tstg
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
˚C
Nm
Nm
Max.
90
200
15
150
125
125
5
2
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
–40
-
-
Test Conditions
VGE = 0V
-
Tcase = 65˚C
1ms, Tcase = 110˚C
Tcase = 25˚C, Tj = 150˚C
VR = 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V1 = 1800V, V2 = 1300V, 50Hz RMS
Symbol
VCES
VGES
IC
IC(PK)
Pmax
I2t
Visol
QPD
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Units
V
V
A
A
W
kA2s
V
PC
Max.
1700
±20
200
400
1390
7.5
4000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value
Isolation voltage - per module
Partial discharge - per module
DIM200WHS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/8
www.dynexsemi.com
Test Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC = 10mA, VGE = VCE
VGE = 15V, IC = 200A
VGE = 15V, IC = 200A, , Tcase = 125˚C
DC
tp = 1ms
IF = 200A
IF = 200A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
-
-
T
j
= 125˚C, V
CC
= 1000V,
I1
t
p
≤ 10µs,
V
CE(max)
= V
CES
– L*. di/dt
I2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. ISC
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
ICES
IGES
VGE(TH)
VCE(sat)
†
IF
IFM
VF
†
Cies
LM
RINT
SCData
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
mΩ
A
A
Max.
1
6
2
6.5
3.4
4.0
200
400
2.5
2.6
-
-
-
-
-
Typ.
-
-
-
5.5
2.7
3.4
-
-
2.2
2.3
15
20
0.23
900
800
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
Note:
† Measured at the power busbars and not the auxiliary terminals.
* L is the circuit inductance + LM
DIM200WHS17-A000
4/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
590
300
40
320
90
50
2
65
195
42
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 200A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
IF = 200A, VR = 900V,
dIF/dt = 3000A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qg
Qrr
Irr
EREC
Tcase = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
880
410
60
450
110
80
100
195
64
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
IC = 200A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
IF = 200A, VR = 900V,
dIF/dt = 2500A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
EREC
DIM200WHS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/8
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160 180 200
Collector current, IC - (A)
Switching energy, Esw - (mJ)
Eon
Eoff
Erec
Conditions:
Tc = 125˚C,
Rg = 4.7 ,
Vcc = 900V
0
20
40
60
80
100
120
140
410
Gate resistance, R
g
- (Ohms)
Switching energy, E
sw
- (mJ)
56789
Conditions:
T
c
= 125˚C,
I
C
= 100A,
V
cc
= 900V
E
on
E
off
E
rec
0
100
50
150
200
250
300
350
400
0.50 1 1.5 2 2.5 3 3.5 4 4.5 5
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
Common emitter.
T
case
= 25˚C
V
ce
is measured at power busbars
and not the auxiliary terminals
V
GE
= 20V
15V
12V
10V
0
150
100
50
200
250
300
350
400
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
Common emitter.
T
case
= 125˚C
V
ce
is measured at power busbars
and not the auxiliary terminals
V
GE
= 20V
15V
12V
10V
DIM200WHS17-A000
6/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance
0
50
100
150
200
250
300
350
400
00.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward volta
g
e, V
F
-
(
V
)
Foward current, IF - (A)
T
j
= 125˚C
T
j
= 25˚C
V
F
is measured at power busbars
and not the auxiliary terminals
0
50
100
150
200
250
300
350
400
450
0 200 400 600 800 1000 1200 1400 1600 1800
Collector emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
Conditions:
T
case
= 125˚C
V
ge
= 15V
R
g(off)
= 4.7ohms
Module
Chip
0
50
100
150
200
250
300
350
400
0 400 800 1200 1600 2000
Reverse voltage, V
R
- (V)
Reverse recovery current, I
rr
- (A)
T
j
= 125˚C
1
10
100
1000
0.001 0.01 10.1 10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (°C/kW )
Diode
Transistor
IGBT R
i
(˚C/KW)
τ
i
(ms)
Diode R
i
(˚C/KW)
τ
i
(ms)
1
2.10
0.11
4.49
0.01
2
11.62
3.14
25.28
3.21
3
43.85
45.60
74.24
38.58
4
29.53
143.02
90.09
113.97
DIM200WHS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/8
www.dynexsemi.com
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Fig. 11 Package details
Nominal weight: 340g
Module outline type code: W
3(C1)
1(E1C2) 2(E2)
6(G
2
)
7(E
2
)
5(E
1
)
4(G
1
)
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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