SEMICONDUCTOR Se TECHNICAL DATA ae ee 222. er oon CRYSTALONCS 2N 2805 Veterans Highway Suite 14 s NPN Silicon Ronkorkoma. N.Y. 14775 Small-Signal Transistors _. designed for general-purpose switching and amplifier applications. @ MAXIMUM RATINGS 2N2221 2N2221A Rating Symbol 2N2222 2N2222A Unit Collector-Emitter Voltage VcEO 30 50 Vde Collactor-Base Voltage VceBo 60 75 Vde Emitter-Base Voltage VEBO 5.0 6.0 Vde Collector Currant Continuous Io B00 mAdc Total Device Dissipation Pr @Ta=26C das w Derate above 25C An mwe @ To 228C 103 mwWwrc Perate above 25 CASE 22-03, STYLE 1 Operating Junction and Storage Ty. Tstg ~65 to 200 Cc TO-206AA (TO-18) Temperature Range ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted.) Characteristic | symbot | Min I Max Unit OFF CHARACTERSSTICS Collector-Emitter Breakdown Voltagel!) ViBR)CEO Vde (Io = 10 mAdc. Ig = 0) 2N2221. 2N2222 30 -_ 2N2221 A, 2N2222A 50 - Collector-Base Breakdown Voltage ViBR)CBO Vdc (Ig = 10 wAde) 2N2221, 2N2222 80 ~ 2N2221A, 2N22224 78 ~ Emitter-Base Breakdown Voltage V(BR)EBO Vac {Ie = 10 pAde) 2N2221, 2N2222 50 - 2N2221 A, 2N2222A 60 - Collector Cutoff Current ICES nAde (Vee = 30 Vde) 2N2221, 2N2222 -_ 10 (VCE = $0 Vdc) 2N2221A, 2N2202A ~ 10 (ft Pulsed Pulse Width 250 to 350 us Duty Cycle * 2 to 2% conunued)Co wre ewisiauy {__ Symbol | Min Max Unit OFF CHARACTERISTICS (continued) Collector Cutoff Current icRO wAde (Voce = 50 Vac) 2N2221. 2N2222 a oo (Vop = 60 Vdc) 2N2221A. 2N2222A 001 @Ta=150C (VcB = 50 Vde) 2N2221, 2N2222 _ 10 (Vp = 60 Vdc) 2N2221 A, 2N22228 7 10 Emitter Cutoff Currant lEBO - 0.01 Adc (VER = 4.0 Vac. Ie = 0) ON CHARACTERISTICS OC Current Gain NEE = (Ic = 0.1 mAdc. Vcg = 10 Vdc) 2N2221 20 - 2N2222 35 _ 2N2221A 30 _ 2N2222A 50 (ig = 1.0 mAdc. Voge = 10 Vdc) 2N2221 25 150 2N2222 50 325 2N2221A 36 150 2N2222A 7 325 (ig = 10 mAdc, VE = 10 Vac) 2N2221 35 _ 2N2222 7 - 2N2221A 40 J 2N2222A 100 a (Ig = 150 mAdc. VcE = 10 Vdc) 2N2221A 40 129> 2N2222A 1 300 (Ig = 500 mAde. Veg = 10 Vac}! t) 2N2221, 2N2221A 20 - 2N2222. 2N2222A 30 _ lig = 10 mAdc, Voge = 10 Vdc, Ta=-55C) 2N2221, 2N2221A 15 ~ 2N2222. 2N2222A 35 - Collector-Emittar Saturation Voltage!) VCE (sat) Vide (Ig = 150 mAdc, ip = 15 mAdc) 2N2221. 2N2222 0.4 2N2221A, 2N22224 _ 03 (Ic = 500 mAdc, Ip = 50 mAdc) 2N2221, 2N2222 = 16 2N2221A, 2N2222A _ 1.0 Base-Emitter Saturation Voltage(1) VBE(sat} Vdc (ic = 150 mAdc. Ig = 15 mAdc) 2N2221, 2N2222 06 13 2N2221A. 2N2222A 0.6 12 (Ic = 500 mAdc, tg = 50 mAdc) 2N2221, 2N2222 _ 2.6 2N2221A. 2N2222A _ 20 SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VcB = 10 Vdc, f= 0.1 to 1.0 MHz) Cobo _ 8.0 pF Input Capacitance (VeB = 0.5 Vdc, t= 6.110 10 MHz) Cibo _ 25 pF Current Gain hfe a (Ic = 1.0 mAdc. Vcg = 10 Vdc, f = 1 0 KHz) 2N2221 25 ~ 2N2222 50 a 2N2221A 30 2N2222A 50 a Small-Signa! Current Transfer Ratio. Magnitude Ne! : 2.5 a a (Ic = 20 mAdc, VoEg = 20 Vde, { = 100 MHz) | 1) Pulsed Pulse Wedth 250 to 360 us. Duly Cyew 1019 20, ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted } feortinued, Characterietic Symbot | min | Max | Unit SWITCHING CHARACTERISTICS (Ses Figure 10) Turn-Gn Time 2N2221, 2N2222 tion) _ 40 ns 2N2221A, 2N2222A 35 Turn-Ott Time 2N2221. 2N2222 tio _ 250 ns 2N2221A, 2N2222A > 300 ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 25 +3C, Vcg = 24 Vdc 2N2221, 2N2222, 30 Vde 2N2221A, 2N2222A, 10 Vde JANS Py = 400 mw Initial and End Point Limits Characteriatice Tested Symbol Min Max Unit Catiector Cutoff Current 'cBo nAdc Vog = 50 Vdc) 2N2221, 2N2222 a 10 {og = 60 Vdc) 2N2221A. 2N2222A ae 10 DC Currant Gain!) NRE ~ (Ic = 150 MAdc. Vag = 10 Vdc) 2Na221. 2N2222 40 120 2N2221A, 2N2222A 100 300 _ Deita from Pre-Burn-tn Measured Values Min Max Deita Collector Cutoff Current sICBO _ 7100 *o of Initial Value or 35.0 pea whichever is greater Delta OC Currant Gain!1) SHEE = +15 % of Initial Value tr Pulsed Pulse Width 250 to 350 us Duty Cycle 16 to 2 0% am)