
THERMAL DATA
Rthj-amb •
Rthj-Case •Thermal Resistance Junction-Ambient M ax
Thermal Resistance Junction-Case Max 250
83.3
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = 30 V
VCB = 30 V TC = 1 50 oC15
5nA
µA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V 100 nA
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA 45 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 10 mA IB = 0.5 mA
IC = 100 mA IB = 5 mA 0.09
0.2 0.25
0.6 V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 10 mA IB = 0.5 mA
IC = 100 mA IB = 5 mA 0.7
0.9 V
V
VBE(on)∗Base-Emitter On
Voltage IC = 2 mA VCE = 5 V
IC = 10 mA VCE = 5 V 0.58 0.66 0.7
0.77 V
V
hFE DC Current Gain IC = 2 mA VCE = 5 V
for BC547B
for BC547C 200
420 450
800
fTTransition Frequency IC = 10 mA VCE = 5 V f = 100MHz 100 MHz
CCBO Collector-Base
Capacitance IE = 0 VCB = 10 V f = 1 MHz 1.5 pF
CEBO Emitter-Base
Capacitance IC = 0 VEB = 0.5 V f = 1 MHz 11 pF
NF Noise Figure VCE = 5 V IC = 200 µA f = 1 KHz
∆f = 200 Hz RG = 2 KΩ210dB
∗ P ulsed: P ulse duration = 300 µs, d uty cy cle ≤ 2 %
BC547B / BC547C
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