LH Series
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
FaxBack +86-512-66607370 1/4
Zener diode
Features
1. Low leakage
2. Low zener impedance
3. High reliability
4. Small surface mounting type
Applications
Voltage st abili zation
Absolute Maximum Ratings
Tj=25 Parameter Symbol Value Unit
Power dissipation Pd 500 mW
Junction temperature Tj 175
Storage temperature range Tstg -55~+175
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25
Type Grade Zener Voltage Dynamic Resist ance Reverse Current
VZ (V) Test
Condition rd (Ω) Test
Condition IR (μA) Test
Condition
LH Min Max IZ (mA) Max IZ (mA) Max VR (V)
A1 1.6 1.8
A2 1.7 1.9
A3 1.8 2.0 5 100 5 25 0.5
B1 1.9 2.1
B2 2.0 2.2
B3 2.1 2.3
C1 2.2 2.4
C2 2.3 2.5
2
C3 2.4 2.6
5 100 5 5 0.5
LH Series
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
FaxBack +86-512-66607370 2/4
Zener Voltage Dynamic Resistance Reverse Current
VZ (V) Test
Condition rd (Ω) Test
Condition IR (μA) Test
Condition
Type
LH
Grade
Min Max IZ (mA) Max IZ (mA) Max VR (V)
A1 2.5 2.7
A2 2.6 2.8
A3 2.7 2.9
B1 2.8 3.0
B2 2.9 3.1
B3 3.0 3.2
C1 3.1 3.3
C2 3.2 3.4
3
C3 3.3 3.5
5 100 5 5 0.5
A1 3.4 3.6
A2 3.5 3.7
A3 3.6 3.8
B1 3.7 3.9
B2 3.8 4.0
B3 3.9 4.1
C1 4.0 4.2
C2 4.1 4.3
4
C3 4.2 4.4
5 100 5 5 1.0
A1 4.3 4.5
A2 4.4 4.6
A3 4.5 4.7
B1 4.6 4.8
B2 4.7 4.9
B3 4.8 5.0
C1 4.9 5.1
C2 5.0 5.2
5
C3 5.1 5.3
5 100 5 5 1.5
A1 5.2 5.5
A2 5.3 5.6
A3 5.4 5.7
B1 5.5 5.8
B2 5.6 5.9
B3 5.7 6.0
C1 5.8 6.1
C2 6.0 6.3
6
C3 6.1 6.4
5 40 5 5 2.0
A1 6.3 6.6
A2 6.4 6.7
A3 6.6 6.9
B1 6.7 7.0
B2 6.9 7.2
B3 7.0 7.3
C1 7.2 7.6
C2 7.3 7.7
7
C3 7.5 7.9
5 15 5 1 3.5
LH Series
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
FaxBack +86-512-66607370 3/4
Zener Voltage Dynamic Resistance Reverse Current
VZ (V) Test
Condition rd (Ω) Test
Condition IR (μA) Test
Condition
Type
LH
Grade
Min Max IZ (mA) Max IZ (mA) Max VR (V)
A1 7.7 8.1
A2 7.9 8.3
A3 8.1 8.5
B1 8.3 8.7
B2 8.5 8.9
B3 8.7 9.1
C1 8.9 9.3
C2 9.1 9.5
9
C3 9.3 9.7
5 20 5 1 5.0
A1 9.5 9.9
A2 9.7 10.1
A3 9.9 10.3
B1 10.2 10.6
B2 10.4 10.8
B3 10.7 11.1
C1 10.9 11.3
C2 11.1 11.6
11
C3 11.4 11.9
5 25 5 1 7.5
A1 11.6 12.1
A2 11.9 12.4
A3 12.2 12.7
B1 12.4 12.9
B2 12.6 13.1
B3 12.9 13.4
C1 13.2 13.7
C2 13.5 14.0
12
C3 13.8 14.3
5 35 5 1 9.5
1 14.1 14.7
2 14.5 15.1
15 3 14.9 15.5 5 40 5 1 11.0
1 15.3 15.9
2 15.7 16.5
16 3 16.3 17.1 5 45 5 1 12.0
1 16.9 17.7
2 17.5 18.3
18 3 18.1 19.0 5 55 5 1 13.0
1 18.8 19.7
2 19.5 20.4
20 3 20.2 21.1 2 60 2 1 15.0
1 20.9 21.9
2 21.6 22.6
22 3 22.3 23.3 2 65 2 1 17.0
1 22.9 24.0
2 23.6 24.7
24 3 24.3 25.5 2 70 2 1 19.0
LH Series
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
FaxBack +86-512-66607370 4/4
Zener Voltage Dynamic Resistance Reverse Current
VZ (V) Test
Condition rd (Ω) Test
Condition IR (μA) Test
Condition
Type
LH
Grade
Min Max IZ (mA) Max IZ (mA) Max VR (V)
1 25.2 26.6
2 26.2 27.6
27 3 27.2 28.6 2 80 2 1 21.0
1 28.2 29.6
2 29.2 30.6
30 3 30.2 31.6 2 100 2 1 23.0
1 31.2 32.6
2 32.2 33.6
33 3 33.2 34.6 2 120 2 1 25.0
1 34.2 35.7
2 35.3 36.8
36 3 36.4 38.0 2 140 2 1 27.0
Note: 1. Tested with DC.
2. Type No. is as follows: 2A1, 2A2, 36-3.
Dimensions in mm
Glass Case
Mini Melf / SOD-80
JEDEC DO-213 AA
Cathode identification
3.5±0.2
0.3
Φ1.5±0.1