1/24/01
BC556 thru BC558
Small Signal Transistors (PNP)
Features
• PNP Silicon Epitax ial Planar Transistors for
switching and AF amplifier applicat ions.
• These transistors are subdivided into three groups
A, B, and C according to their current gain.
The type BC556 is available in groups A and B,
however, the types BC557 and BC558 can be
supplied in all three groups. As complementary
types, the NPN transistors BC546...BC548 are
recommended.
• On special request, these transistors are also
manufactured in the pin configurat ion TO-18.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
BC556 80
Collector-Base Voltage BC557 –VCBO 50 V
BC558 30
BC556 80
Collector-Emitter Voltage BC557 –VCES 50 V
BC558 30
BC556 65
Collector-Emitter Voltage BC557 –VCEO 45 V
BC558 30
Emitter-Base Voltage –VEBO 5V
Collector Current –IC100 mA
Peak Collector Current –ICM 200 mA
Peak Base Current –IBM 200 mA
Peak Emitter Current IEM 200 mA
Power Dissipation at Tamb = 25°C Ptot 500(1) mW
Thermal Resistance Junction to Ambient Air RΘJA 250(1) °C/W
Junction Temperature Tj150 °C
Storage Temperature Range TS– 65 to +150 °C
Note: (1) Valid provided that leads are kept at ambient temper ature at a distance of 2mm from case.
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
0.098 (2.5)
max. ∅
0.022 (0.55)
Bottom
View
TO-226AA (TO-92)
Dimensions in inches
and (millimeters)
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Current gain group A–VCE = 5V, –IC= 2mA, —220 —
Small Signal Current Gain B hfe f = 1 kHz —330 ——
C—600 —
Current gain group A–VCE = 5V, –IC= 2mA, 1.6 2.7 4.5
Input Impedance B hie f = 1kHz 3.2 4.5 8.5 kΩ
C 6 8.7 15
Current gain group A–VCE = 5V, –IC= 2mA, —18 30
Output Admittance B hoe f = 1kHz —30 60 µS
C—60 110
Current gain group A–VCE = 5V, –IC= 2mA, —1.5 · 10-4 —
Reverse Voltage Transfer Ratio B hre f = 1kHz —2 · 10-4 ——
C—3 · 10-4 —
Current gain group A—90 —
B–VCE = 5V, –IC= 10µA—150 —
C—270 —
Current gain group A 110 180 220
DC Current Gain B hFE –VCE = 5V, –IC= 2mA 200 290 450 —
C 420 500 800
Current gain group A—120 —
B–VCE = 5V, –IC= 100mA —200 —
C—400 —
Collector Saturat ion Voltage –VCEsat –IC= 10mA, –IB= 0.5mA —80 300 mV
–IC= 100mA, –IB= 5mA —250 650
Base Saturat ion Voltage –VBEsat –IC= 10mA, –IB= 0.5mA —700 —mV
–IC= 100mA, –IB= 5mA —900 —
Base-Emitter Voltage –VBE –VCE = 5V, –IC= 2mA 600 660 750 mV
–VCE = 5V, –IC= 10mA ——800
BC556 –VCE = 80V —0.2 15 nA
Collector-Emitter BC557 –VCE = 50V —0.2 15 nA
Cutoff Current BC558 –ICES –VCE = 30V —0.2 15 nA
BC556 –VCE = 80V, Tj= 125°C—— 4µA
BC557 –VCE = 50V, Tj= 125°C—— 4µA
BC558 –VCE = 30V, Tj= 125°C—— 4µA
Gain-Bandwidth Product fT–VCE = 5V, –IC= 10mA, —150 —MHz
f = 100MHz
Collector-Base Capacitance CCBO –VCB = 10V, f = 1MHz —— 6pF
–VCE = 5V, –IC= 200µA,
Noise Figure BC556, BC557, BC558 F RG= 2kΩ, f = 1kHz, —210dB
∆f = 200Hz
BC556 thru BC558
Small Signal Transistors (PNP)
°C
BC556 thru BC558
Small Signal Transistors (PNP)
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
Relative h-parameters
versus collector current
10
1
10
1
-IC
10 mA
102
6
4
2
6
4
2
6
4
2
-1
10-1 24 24
h (-I = 2 mA)
eC
h (-I )
eC
hie
hoe
hre
hfe
-V = 5 V
CE
T = 25°C
amb
BC556 thru BC558
Small Signal Transistors (PNP)
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
BC556 thru BC558
Small Signal Transistors (PNP)
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
