Advance Technical Information High Voltage MOSFET IXTH 1N100 IXTT 1N100 Symbol Test Conditions VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M 1000 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 1.5 A IDM TC = 25C, pulse width limited by TJM 6 A Maximum Ratings 1.5 A IAR EAR TC = 25C 6 mJ EAS TC = 25C 200 mJ dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 18 PD TC = 25C 3 V/ns 60 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ Mounting torque (TO-247) Weight 1.13/10 Nm/lb.in. TO-268 TO-247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions 4 6 g g 300 C TO-247 AD (IXTH) D (TAB) TO-268 Case Style G (TAB) S G = Gate, S = Source, D = Drain, TAB = Drain Features International standard packages High voltage, Low RDS (on) HDMOSTM process Rugged polysilicon gate Fast switching times Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 A VGS(th) VDS = VGS, ID = 25 A IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 1.0A Pulse test, t 300 s, duty cycle d 2 % (c) 2002 IXYS All rights reserved = 1000 V = 1.5 A = 11 RDS(on) N-Channel Enhancement Mode Avalanche Energy Rated Md VDSS ID25 1000 2.5 TJ = 25C TJ = 125C V 4.5 V 100 nA 25 500 A A 11 cell structure Applications Switch-mode and resonant-mode power supplies Flyback inverters DC choppers High frequency matching Advantages Space savings High power density 98886 (1/2) IXTH 1N100 IXTT 1N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 1.0A, pulse test 0.8 Ciss Coss 1.5 S 480 pF 45 pF 15 pF 18 ns 19 ns 20 ns 18 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 1A td(off) RG = 18, (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 1A Qgd 23 nC 4.5 nC 14 nC RthJC RthCK 2.3 TO-247 Source-Drain Diode 0.25 TO-247 AD Outline 1 Test Conditions IS VGS = 0 V Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 AEP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC K/W ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % t rr IF = IS, -di/dt = 100 A/s, VR = 100 V A 6 A 1.8 V 710 2 - Drain Tab - Drain Dim. K/W 1.5 3 Terminals: 1 - Gate 3 - Source Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol 2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline ns Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1