CD4093BMSH3W - Intersil Corporation

7-1074

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Pinout

CD4093BMSMS

TOP VIEW

Functional Diagram

J = A · B

K = C · D

VSS

VDD

M = G · H

L = E · F

VSS

VDD

J = A · B

L = E · F

M = G · H

K = C · D

Features

• High Voltage Types (20V Rating)

• Schmitt Trigger Action on Each Input With No External

Components

• Hysteresis Voltage Typically 0.9V at VDD = 5V and

2.3V at VDD = 10V

• Noise Immunity Greater than 50%

• No Limit on Input Rise and Fall Times

• Standardized, Symmetrical Output Characteristics

• 100% Tested for Quiescent Current at 20V

• Maximum Input Current of 1µA at 18V Over Full Pack-

age Temperature Range, 100nA at 18V and +25oC

• 5V, 10V and 15V Parametric Ratings

• Meets All Requirements of JEDEC Tentative Standard

No. 13B, “Standard Speciﬁcations for Description of

‘B’ Series CMOS Devices”

Applications

• Wave and Pulse Shapers

• High Noise Environment Systems

• Monostable Multivibrators

• Astable Multivibrators

• NAND Logic

Description

CD4093BMS consists of four Schmitt trigger circuits. Each

circuit functions as a two input NAND gate with Schmitt trig-

ger action on both inputs. The gate switches at different

points for positive and negative going signals. The difference

between the positive voltage (VP) and the negative voltage

(VN) is deﬁned as hysteresis voltage (VH) (see Figure 1).

The CD4093BMS is supplied in these 14 lead outline pack-

ages:

Braze Seal DIP H4H

Frit Seal DIP H1B

Ceramic Flatpack H3W

File Number 3330

December 1992

CD4093BMS

CMOS Quad 2-Input

NAND Schmitt Triggers

7-1075

Speciﬁcations CD4093BMS

Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V

(Voltage Referenced to VSS Terminals)

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

Package Types D, F, K, H

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC

At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for

10s Maximum

Thermal Resistance . . . . . . . . . . . . . . . . θja θjc

Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W

Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W

Maximum Package Power Dissipation (PD) at +125oC

For TA = -55oC to +100oC (Package Type D, F, K). . . . . . 500mW

For TA = +100oC to +125oC (Package Type D, F, K) . . . . .Derate

Linearity at 12mW/oC to 200mW

Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW

For TA = Full Package Temperature Range (All Package Types)

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTE 1) GROUP A

SUBGROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-2µA

2 +125oC - 200 µA

VDD = 18V, VIN = VDD or GND 3 -55oC-2µA

Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA

2 +125oC -1000 - nA

VDD = 18V 3 -55oC -100 - nA

Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA

2 +125oC - 1000 nA

VDD = 18V 3 -55oC - 100 nA

Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV

Output Voltage VOH15 VDD = 15V, No Load (Note 5) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 0.53 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA

Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA

N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V

P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V

Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >

VDD/2 VOL <

VDD/2 V

VDD = 20V, VIN = VDD or GND 7 +25oC

VDD = 18V, VIN = VDD or GND 8A +125oC

VDD = 3V, VIN = VDD or GND 8B -55oC

Positive Trigger

Threshold Voltage VP5V VDD = 5V (Note 2) 1, 2, 3 +25oC, +125oC, -55oC 2.2 3.6 V

VP15V VDD = 15V (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 6.8 10.8 V

Positive Trigger

Threshold Voltage VP5V VDD = 5V (Note 4) 1, 2, 3 +25oC, +125oC, -55oC 2.6 4.0 V

Negative Trigger

Threshold Voltage VN5V VDD = 5V (Note 2) 1, 2, 3 +25oC, +125oC, -55oC 0.9 2.8 V

VN15V VDD = 15V (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 4.0 7.4 V

Negative Trigger

Threshold Voltage VN5V VDD = 5V (Note 4) 1, 2, 3 +25oC, +125oC, -55oC 1.4 3.2 V

Hysteresis Voltage VH5V VDD = 5V (Note 2) 1, 2, 3 +25oC, +125oC, -55oC 0.3 1.6 V

VH15V VDD = 15V (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 1.6 5.0 V

Hysteresis Voltage VH5V VDD = 5V (Note 4) 1, 2, 3 +25oC, +125oC, -55oC 0.3 1.6 V

NOTES: 1. All voltages referenced to device GND, 100% testing being im-

plemented.

2. Inputs on terminals 1, 5, 8, 12

3. Input on Terminal 1

4. Input on terminals 1 and 2, 5 and 6, 8 and 9, or 12 and 13

5. For accuracy, voltage is measured differentially to VDD. Limit

is 0.050V max.

7-1076

Speciﬁcations CD4093BMS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS (NOTES 1, 2) GROUP A

SUBGROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

Propagation Delay TPHL

TPLH VDD = 5V, VIN = VDD or GND 9 +25oC - 380 ns

10, 11 +125oC, -55oC - 513 ns

Transition Time TTHL

TTLH VDD = 5V, VIN = VDD or GND 9 +25oC - 200 ns

10, 11 +125oC, -55oC - 270 ns

NOTES:

1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

LIMITS

UNITSMIN MAX

Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 1 µA

+125oC-30µA

VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

+125oC-60µA

VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA

+125oC - 120 µA

Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC,

-55oC-50mV

Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC,

-55oC-50mV

Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC,

-55oC4.95 - V

Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC,

-55oC9.95 - V

Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA

-55oC 0.64 - mA

Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA

-55oC 1.6 - mA

Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA

-55oC 4.2 - mA

Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA

-55oC - -0.64 mA

Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA

-55oC - -2.0 mA

Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA

-55oC - -1.6 mA

Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA

-55oC - -4.2 mA

Propagation Delay TPHL

TPLH VDD = 10V 1, 2, 3 +25oC - 180 ns

VDD = 15V 1, 2, 3 +25oC - 130 ns

Transition Time TTHL

TTLH VDD = 10V 1, 2, 3 +25oC - 100 ns

VDD = 15V 1, 2, 3 +25oC - 80 ns

7-1077

Speciﬁcations CD4093BMS

Positive Trigger

Threshold Voltage VP10V VDD = 10V 1, 2, 4 +25oC, +125oC,

-55oC4.6 7.1 V

VP10V VDD = 10V 1, 2, 5 +25oC, +125oC,

-55oC5.6 8.2 V

VP15V VDD = 15V 1, 2, 5 +25oC, +125oC,

-55oC6.3 12.7 V

Negative Trigger

Threshold Voltage VN10V VDD = 10V 1, 2, 4 +25oC, +125oC,

-55oC2.5 5.2 V

VN10V VDD = 10V 1, 2, 5 +25oC, +125oC,

-55oC3.4 6.6 V

VN15V VDD = 15V 1, 2, 5 +25oC, +125oC,

-55oC4.8 9.6 V

Hysteresis Voltage VH10V VDD = 10V 1, 2, 4 +25oC, +125oC,

-55oC1.2 3.4 V

VH10V VDD = 10V 1, 2, 5 +25oC, +125oC,

-55oC1.2 3.4 V

VH15V VDD = 15V 1, 2, 5 +25oC, +125oC,

-55oC1.6 5.0 V

Input Capacitance CIN Any Input 1, 2 +25oC - 7.5 pF

NOTES:

1. All voltages referenced to device GND.

2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized

on initial design release and upon design changes which would affect these characteristics.

3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

4. Input on terminals 1, 5, 8, 12

5. Input on terminals 1 and 2, 5 and 6, 8 and 9, or 12 and 13

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

LIMITS

UNITSMIN MAX

Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 7.5 µA

N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V

N Threshold Voltage

Delta ∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC-±1V

P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V

P Threshold Voltage

Delta ∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC-±1V

Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >

VDD/2 VOL <

VDD/2 V

VDD = 3V, VIN = VDD or GND

Propagation Delay Time TPHL

TPLH VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x

+25oC

Limit

NOTES: 1. All voltages referenced to device GND.

2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit.

4. Read and Record

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

LIMITS

UNITSMIN MAX

7-1078

Speciﬁcations CD4093BMS

Logic Diagram

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC

PARAMETER SYMBOL DELTA LIMIT

Supply Current - MSI-1 IDD ± 0.2µA

Output Current (Sink) IOL5 ± 20% x Pre-Test Reading

Output Current (Source) IOH5A ± 20% x Pre-Test Reading

TABLE 6. APPLICABLE SUBGROUPS

CONFORMANCE GROUP MIL-STD-883

METHOD GROUP A SUBGROUPS READ AND RECORD

Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

PDA (Note 1) 100% 5004 1, 7, 9, Deltas

Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A

PDA (Note 1) 100% 5004 1, 7, 9, Deltas

Final Test 100% 5004 2, 3, 8A, 8B, 10, 11

Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11

Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11

Subgroup B-6 Sample 5005 1, 7, 9

Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3

NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.

TABLE 7. TOTAL DOSE IRRADIATION

CONFORMANCE GROUPS MIL-STD-883

METHOD

TEST READ AND RECORD

PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD

Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS

FUNCTION OPEN GROUND VDD 9V ± -0.5V

OSCILLATOR

50kHz 25kHz

Static Burn-In 1

Note 1 3, 4, 10, 11 1, 2, 5-9, 12, 13 14

Static Burn-In 2

Note 1 3, 4, 10, 11 7 1, 2, 5, 6, 8,

9, 12-14

Dynamic Burn-

In Note 1 - 7 14 3, 4, 10, 11 1, 2, 5, 6,

8, 9, 12, 13 -

Irradiation

Note 2 3, 4, 10, 11 7 1, 2, 5, 6, 8,

9, 12-14

NOTES:

1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V

2. Each pin except VDD and GND will have a series resistor of 47K±5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD

= 10V ± 0.5V

3 (4, 10, 11)

1 (5, 8, 12)

2 (6, 9, 13)

* All inputs protected by CMOS protection network

1 OF 4 SCHMITT TRIGGERS

VDD

VSS

7-1079

CD4093BMS

FIGURE 1. HYSTERESIS DEFINITION, CHARACTERISTIC, AND TEST SETUP

FIGURE 2. INPUT AND OUTPUT CHARACTERISTICS

Typical Performance Curves

FIGURE 3. TYPICAL CURRENT AND VOLTAGE TRANSFER

CHARACTERISTICS FIGURE 4. TYPICAL VOLTAGE TRANSFER CHARACTERIS-

TICS AS A FUNCTION OF TEMPERATURE

VDD

VSS

VDD

VSS

VP VN

VN VP

VH = VP - VN

(a) DEFINITION OF VP, VN, VH (b) OF 1 OF 4 GATES

TRANSFER CHARACTERISTIC

VDD

VOH

VOL

DRIVER LOAD

LOGIC “1”

OUTPUT

REGION

LOGIC “0”

OUTPUT

REGION

LOGIC “1”

INPUT

REGION

LOGIC “0”

INPUT

REGION

VDD

VSS

VOL

VOH

OUTPUT

CHARACTERISTIC INPUT

CHARACTERISTIC

ALL

OTHER

INPUTS

TO VDD

VDD

VO ID

6VO

10V

AMBIENT TEMPERATURE (T A) = +25oC

SUPPLY VOLT AGE (VDD) = 15V

CURRENT

PEAK

CURRENT

PEAK

15.012.510.07.55.02.50

15.0

12.5

10.0

7.5

5.0

2.5

1.0

0.5

INPUT VOLT AGE (VI) (V)

OUTPUT VOLT AGE (VO) (V)

DRAIN CURRENT (ID) (mA)

ALL OTHER

PACKAGE

INPUTS

TO VDD

VDD

-55oC

6VO

+125oC

SUPPLY VOLT AGE (VDD) = 15V

10V

OUTPUT VOLT AGE (VO) (V)

151050 INPUT VOLT AGE (VI) (V)

7-1080

CD4093BMS

FIGURE 5. TYPICAL OUTPUT LOW (SINK) CURRENT

CHARACTERISTICS FIGURE 6. MINIMUM OUTPUT LOW (SINK) CURRENT

CHARACTERISTICS

FIGURE 7. TYPICAL OUTPUT HIGH (SOURCE) CURRENT

CHARACTERISTICS FIGURE 8. MINIMUM OUTPUT HIGH (SOURCE) CURRENT

CHARACTERISTICS

FIGURE 9. TYPICAL PROPAGATION DELAY TIME vs. SUPPLY

VOLTAGE FIGURE 10. TYPICAL TRANSITION TIME vs. LOAD

CAPACITANCE

Typical Performance Curves (Continued)

10V

AMBIENT TEMPERATURE (T A) = +25oC

GATE-TO-SOURCE VOLT AGE (VGS) = 15V

0 5 10 15

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

10V

AMBIENT TEMPERATURE (T A) = +25oC

GATE-TO-SOURCE VOLT AGE (VGS) = 15V

0 5 10 15

7.5

5.0

2.5

10.0

12.5

15.0

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

-10V

-15V

AMBIENT TEMPERATURE (T A) = +25oC

GATE-TO-SOURCE VOLT AGE (VGS) = -5V

-5

-10

-15

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

-20

-25

-30

0-5-10-15

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

-10V

-15V

AMBIENT TEMPERATURE (T A) = +25oC0

-5

-10

-15

DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 0-5-10-15

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

GATE-TO-SOURCE VOLT AGE (VGS) = -5V

AMBIENT TEMPERATURE (TA) = +25oC

LOAD CAPACITANCE (CL) = 50pF

SUPPLY VOLTAGE (VDD)

PROPAGATION DELAY TIME (tPHL, tPLH) (ns)

0 5 10 15 20

100

200

300

400

500

600

700 AMBIENT TEMPERATURE (T A) = +25oC

LOAD CAPACITANCE (CL) (pF)

0 40 60 80 10020

100

150

200

SUPPLY VOLT AGE (VDD) = 5V

10V

15V

TRANSITION TIME (tTHL, tTLH) (ns)

7-1081

CD4093BMS

FIGURE 11. TYPICAL TRIGGER THRESHOLD VOLTAGE vs.

VDD FIGURE 12. TYPICAL PERCENT HYSTERESIS vs. SUPPLY

VOLTAGE

FIGURE 13. TYPICAL POWER DISSIPATION vs. FREQUENCY

CHARACTERISTICS FIGURE 14. TYPICAL POWER DISSIPATION vs. RISE AND

FALL TIMES

Applications

FIGURE 15. WAVE SHAPER FIGURE 16. MONOSTABLE MULTIVIBRATOR

Typical Performance Curves (Continued)

AMBIENT TEMPERATURE (T A) = +25oC

INPUT ON TERMINALS 1, 5, 8, 12 OR 2, 6, 9, 13;

OTHER INPUTS TIED TO VDD

0 5 10 15 20

SUPPLY VOLTAGE (VDD) (V)

TRIGGER THRESHOLD VOLTAGE (VP, VN) (V)

AMBIENT TEMPERATURE (T A) = +25oC

SUPPLY VOLTAGE (VDD) (V)

00 5 10 15 20

HYSTERESIS ( x 100) (%)

VDD

AMBIENT TEMPERATURE (T A) = +25oC

10-1 100101102103104

100

102

103

104

105

6428 6428 6428 6428 6428

FREQUENCY (f) (kHz)

POWER DISSIPATION (PD) (µW)

SUPPLY VOLT AGE (VDD) = 15V, CL = 50pF

10V, 50pF 10V, 15pF

5V, 50pF

10 102103104105106

6428 6428 6428 6428 6428

RISE AND FALL TIME (tR, tF) (ns)

POWER DISSIPATION (PD) (µW)

10-1

102

103

104

8AMBIENT TEMPERATURE (TA) = +25oC

LOAD CAPACITANCE (CL) = 15pF

2SUPPLY VOLT AGE (VDD) = 15V,

FREQUENCY (f) = 100kHz

15V, 10kHz

15V, 1kHz

10V, 1kHz

5V, 1kHz

1VDD

VSS

1/4 CD4093BMS

VDD

VSS

TO CONTROL

SIGNAL OR

VDD

FREQUENCY RANGE OF WAVE SHAPE

IS FROM DC TO 1MHz

1/4 CD4093BMS

TO CONTROL

SIGNAL OR

VDD

VSS

1/3 CD4007A

VSS

VDD

tM = RC n

50kΩ≤ R ≤ 1MΩ

100pF ≤ C ≤ 1µF

VDD

VDD-VP

FOR THE RANGE OF R AND C

GIVEN 5µs < tM < 1s

VDD

VSS

1082

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notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate

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CD4093BMS

Chip Dimensions and Pad Layout

Dimension in parenthesis are in millimeters and are

derived from the basic inch dimensions as indicated.

Grid graduations are in mils (10-3 inch).

METALLIZATION: Thickness: 11kÅ−14kÅ, AL.

PASSIVATION: 10.4kÅ - 15.6kÅ, Silane

BOND PADS: 0.004 inches X 0.004 inches MIN

DIE THICKNESS: 0.0198 inches - 0.0218 inches

FIGURE 17. ASTABLE MULTIVIBRATOR

Applications (Continued)

11/4 CD4093BMS

TO CONTROL

SIGNAL OR

VDD VDD

VSS

tA = RC n

50kΩ≤ R ≤ 1MΩ

100pF ≤ C ≤ 1µF

FOR THE RANGE OF R AND C

GIVEN 2µs < tA < 0.4s

VDD-VN

VDD-VP