Semiconductor Group 1 5.91
Type Marking Ordering Code Pin Configuration Package 1)
123
MPSA 42
MPSA 43 MPSA 42
MPSA 43 Q68000-A413
Q68000-A4809 E B C TO-92
Maximum Ratings
Parameter Symbol Values Unit
MPSA 42 MPSA 43
Collector-emitter voltage VCE0 300 200 V
Collector-base voltage VCB0 300 200
Emitter-base voltage VEB0 6
Collector current IC500 mA
Base current IB100
Total power dissipation, TC = 66 ˚C 2) Ptot 625 mW
Junction temperature Tj150 ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient Rth JA ≤200 K/W
Junction - case 2) Rth JC ≤135
1) For detailed information see chapter Package Outlines.
2) Mounted on AI-heat sink 15 mm × 25 mm × 0.5 mm.
NPN Silicon High-Voltage Transistors MPSA 42
MPSA 43
1
2
3
●High breakdown voltage
●Low collector-emitter saturation voltage
●Complementary types: MPSA 92
MPSA 93 (PNP)
MPSA 42
MPSA 43
Semiconductor Group 2
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter Symbol Limit Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 MPSA 42
MPSA 43
V(BR)CE0 300
200 –
––
–
V
Collector-base breakdown voltage
IC = 100 µA, IB = 0 MPSA 42
MPSA 43
V(BR)CB0 300
200 –
––
–
Emitter-base breakdown voltage
IE = 100 µA, IC = 0 V(BR)EB0 6––
Collector-base cutoff current
VCB = 200 V MPSA 42
VCB = 160 V MPSA 43
VCB = 200 V, TA = 150 °C MPSA 42
VCB = 160 V, TA = 150 °C MPSA 43
ICB0 –
–
–
–
–
–
–
–
100
100
20
20
nA
nA
µA
µA
Emitter-base cutoff current
VBE = 3 V, IC = 0 IEB0 – – 100 nA
DC current gain 1)
IC =1 mA, VCE = 10 V
IC =10 mA, VCE = 10 V
IC =30 mA, VCE = 10 V
hFE 25
40
40
–
–
–
–
–
–
–
Collector-emitter saturation voltage 1)
IC = 20 mA, IC = 2 mA MPSA 42
MPSA 43
VCEsat –
––
–0.5
0.4
V
Base-emitter saturation voltage
IC = 20 mA, IB = 2 mA VBEsat – – 0.9
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz fT– 70 – MHz
Collector-base capacitance
VCB = 20 V, f = 1 MHz MPSA 42
MPSA 43
Cobo –
––
–3
4
pF
1) Pulse test conditions: t≤ 300 µs, D≤ 2%.
Semiconductor Group 3
MPSA 42
MPSA 43
Total power dissipation Ptot = f (TA;TC)
Operating range IC = f(VCE)
TA = 25 °C, D = 0
Permissible pulse load RthJA = f (tp)
Collector cutoff current ICB0 = f (TA)
VCB = VCBmax
Semiconductor Group 4
MPSA 42
MPSA 43
DC current gain hFE = f (IC)
VCE = 10 V
Collector current IC = f (VBE)
VCE = 10 V
Transition frequency fT = f (IC)
VCE = 20 V, f= 20 MHz, VCE = 10 V
