MPSA 42 MPSA 43 NPN Silicon High-Voltage Transistors High breakdown voltage Low collector-emitter saturation voltage Complementary types: MPSA 92 MPSA 93 (PNP) 1 32 Type MPSA 42 MPSA 43 Marking MPSA 42 MPSA 43 Ordering Code Pin Configuration Q68000-A413 Q68000-A4809 1 2 3 E B C Package 1) TO-92 Maximum Ratings Parameter Symbol Values MPSA 42 MPSA 43 Unit Collector-emitter voltage VCE0 300 200 Collector-base voltage VCB0 300 200 Emitter-base voltage VEB0 Collector current IC 500 Base current IB 100 Total power dissipation, TC = 66 C 2) Ptot 625 mW Junction temperature Tj 150 C Storage temperature range Tstg V 6 mA - 65 ... + 150 Thermal Resistance Junction - ambient Rth JA 200 Junction - case 2) Rth JC 135 1) 2) K/W For detailed information see chapter Package Outlines. Mounted on AI-heat sink 15 mm x 25 mm x 0.5 mm. Semiconductor Group 1 5.91 MPSA 42 MPSA 43 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Limit Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 MPSA 42 MPSA 43 V(BR)CE0 Collector-base breakdown voltage IC = 100 A, IB = 0 MPSA 42 MPSA 43 V(BR)CB0 Emitter-base breakdown voltage V(BR)EB0 IE = 100 A, IC = 0 Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 C VCB = 160 V, TA = 150 C V 300 200 - - - - 300 200 - - - - 6 - - - - - - - - - - 100 100 20 20 nA nA A A - - 100 nA ICB0 MPSA 42 MPSA 43 MPSA 42 MPSA 43 IEB0 Emitter-base cutoff current VBE = 3 V, IC = 0 DC current gain 1) IC =1 mA, VCE = 10 V IC =10 mA, VCE = 10 V IC =30 mA, VCE = 10 V hFE Collector-emitter saturation voltage 1) IC = 20 mA, IC = 2 mA MPSA 42 MPSA 43 VCEsat Base-emitter saturation voltage IC = 20 mA, IB = 2 mA VBEsat - 25 40 40 - - - - - - V - - - - 0.5 0.4 - - 0.9 - 70 - - - - - 3 4 AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 100 MHz fT Collector-base capacitance Cobo VCB = 20 V, f = 1 MHz 1) MPSA 42 MPSA 43 Pulse test conditions: t 300 s, D 2 %. Semiconductor Group 2 MHz pF MPSA 42 MPSA 43 Total power dissipation Ptot = f (TA; TC) Permissible pulse load RthJA = f (tp) Operating range IC = f(VCE) Collector cutoff current ICB0 = f (TA) VCB = VCBmax TA = 25 C, D = 0 Semiconductor Group 3 MPSA 42 MPSA 43 DC current gain hFE = f (IC) VCE = 10 V Transition frequency fT = f (IC) VCE = 20 V, f = 20 MHz, VCE = 10 V Collector current IC = f (VBE) VCE = 10 V Semiconductor Group 4