Semiconductor Group 2
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA V(BR)DSS 60 – – V
Gate threshold voltage
VGS = VDS, ID = 1.0 mA VGS(th) 2.5 3.0 3.5
Zero gate voltage drain current
VGS = 60 V, VDS = 0 Tj = 25 °C
Tj = 150 °C
IDSS
–
–0.1
10 1.0
100
µA
Gate-source leakage current
VGS = ± 20 V, VDS = 0 Tj = 25 °C
Tj = 150 °C
IGSS
–
–10
2100
4nA
µA
Drain-source on-state resistance
VGS = 10 V, ID = 7.5 A RDS(on) – 0.12 0.15 Ω
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 ×ID×RDS(on)max,ID = 7.5 A gfs 3.0 5.7 – S
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz Ciss – 360 480 pF
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz Coss – 160 250
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz Crss –5090
Turn-on time ton, (ton = td(on) + tr)
VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ωtd(on) –1525ns
t
r–3045
Turn-off time toff, (toff = td(off) + tf)
VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ωtd(off) –4055
t
f–5575
BTS 112A