2SK2591
Silicon N-Channel MOS FET
Preliminary
November 1996
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter
Outline
123
TO-220CFM
1. Gate
2. Drain
3. Source
D
G
S
2SK2591
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 500 V
Gate to source voltage VGSS ±30 V
Drain current ID8A
Drain peak current ID(pulse)*132 A
Body to drain diode reverse drain current IDR 8A
Channel dissipation Pch*235 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 500 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 ——V I
G
= ±100 µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — –250 µAVDS = 500 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — –3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.45 0.60 ΩID = 4 A
VGS = 10 V*1
Forward transfer admittance |yfs| 5.0 7.5 — S ID = 4 A
VDS = 10 V*1
Input capacitance Ciss — 1450 — pF VDS = 10 V VGS = 0
f = 1 MHz
Output capacitance Coss — 410 — pF
Reverse transfer capacitance Crss — 55 — pF
Turn-on delay time td(on) —20—nsI
D
= 4 A
VGS = 10 V
RL = 5Ω
Rise time tr—55—ns
Turn-off delay time td(off) — 130 — ns
Fall time tf—50—ns
Body to drain diode forward
voltage VDF — 0.9 — V IF = 8 A, VGS = 0
Body to drain diode reverse
recovery time trr — 380 — ns IF = 8 A, VGS = 0,
diF / dt = 100 A / µs
Note 1. Pulse Test
See characteristics curves of 2SK1166.
2SK2591
3
40
30
20
10
0
Channel Dissipation Pch (W)
50 100 150 200
Case Temperature Tc (°C)
Maximum Channel
Dissipation Curve
2SK2591
4
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
