2SK2591 Silicon N-Channel MOS FET Preliminary November 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline TO-220CFM D 12 3 1. Gate 2. Drain 3. Source G S 2SK2591 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID 8 A 32 A 8 A 35 W Drain peak current ID(pulse)* Body to drain diode reverse drain current IDR 1 2 Channel dissipation Pch* Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C Electrical Characteristics (Ta = 25C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 500 Gate to source breakdown voltage V(BR)GSS 30 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 -- -- V IG = 100 A, VDS = 0 Gate to source leak current IGSS -- -- 10 A VGS = 25 V, VDS = 0 Zero gate voltage drain current IDSS -- -- -250 A VDS = 500 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 -- -3.0 V ID = 1 mA, VDS = 10 V Static drain to source on state resistance Forward transfer admittance RDS(on) -- 0.45 0.60 |yfs| 5.0 7.5 -- S ID = 4 A 1 VGS = 10 V* ID = 4 A 1 VDS = 10 V* Input capacitance Ciss -- 1450 -- pF Output capacitance Coss -- 410 -- pF Reverse transfer capacitance Turn-on delay time Crss td(on) -- -- 55 20 -- -- pF ns Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test tr td(off) tf VDF -- -- -- -- 55 130 50 0.9 -- -- -- -- ns ns ns V trr -- 380 -- ns See characteristics curves of 2SK1166. 2 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 5 IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF / dt = 100 A / s 2SK2591 Maximum Channel Dissipation Curve Channel Dissipation Pch (W) 40 30 20 10 0 50 100 Case Temperature 150 200 Tc (C) 3 2SK2591 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4