SSM3K103TU Tentative TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K103TU Power Management Switch Applications High Speed Switching Applications * 1.8 V drive * Low ON-resistance: Unit: mm 2.10.1 Ron = 175 m (max) (@VGS = 1.8V) Lead(Pb)-free Maximum Ratings (Ta = 25C) Symbol Rating VDS 20 V Gate-source voltage VGSS 12 V DC ID 2.4 Pulse IDP 4.8 1 :Gate 2 :Source 3 :Drain A PD (Note 1) 800 PD (Note 2) 500 Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Drain power dissipation +0.1 0.3 -0.05 Unit Drain-source voltage Drain current 3 2 0.70.05 Characteristic 1 0.1660.05 * 80 m (max) (@VGS = 4.0V) 2.00.1 Ron = 0.650.05 1.70.1 Ron = 108 m (max) (@VGS = 2.5V) mW UFM Note 1: Mounted on a ceramic board. 2 (25.4 mm x 25.4 mm x 0.8 t, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) JEDEC JEITA TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 20 V V (BR) DSX ID = 1 mA, VGS = -12 V 10 V Drain cutoff current IDSS VDS = 20 V, VGS = 0 1 A Gate leakage current IGSS VGS = 12 V, VDS = 0 1 A Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Vth VDS = 3 V, ID = 1 mA 0.4 1.0 V Yfs VDS = 3 V, ID = 1.0 A (Note3) 2.8 5.5 S ID = 1.0 A, VGS = 4.0 V (Note3) 60 80 ID = 0.5 A, VGS = 2.5 V (Note3) 80 108 ID = 0.2 A, VGS = 1.8 V (Note3) 110 175 220 pF RDS (ON) m Ciss VDS = 10 V, VGS = 0, f = 1 MHz Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz 51 pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz 42 pF Input capacitance Switching time Turn-on time ton VDD = 10 V, ID = 2.0 A, 12 Turn-off time toff VGS = 0 to 2.5 V, RG = 4.7 10 - 0.85 - 1.20 Drain-source forward voltage VDSF ID = - 2.4 A, VGS = 0 V (Note3) ns V Note3: Pulse test 1 2006-02-27 SSM3K103TU Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 0V RG 0 10 s VDD = 10 V RG = 4.7 D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25C Marking VDD (c) VOUT VDD 10% VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 3 3 KK3 1 2 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. The VGS recommended voltage for turning on this product is 1.8 V or higher. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2006-02-27 SSM3K103TU ID - VDS 5 10 V 4.0 V ID - VGS 10 2.5 V Common Source VDS = 3 V Drain current ID (A) Drain current ID (A) 1.8 V 4 3 1.5 V 2 1 0.1 Ta = 85 C VGS = 1.2 V 1 25 C 0.01 - 25 C 0.001 Common Source Ta = 25C 0 0 0.4 0.2 0.6 0.8 0.0001 0 1 Drain-source voltage VDS (V) 1.0 Gate-source voltage VGS (V) RDS (ON) - ID RDS (ON) - VGS 200 ID = 1.0 A Common Source Common Source Ta = 25C Drain-source ON-resistance RDS (ON) (m) Drain-source ON-resistance RDS (ON) (m) 200 Ta = 25C 150 100 50 0 0 2 6 4 8 150 1.8 V 100 2.5 V VGS = 4.0 50 0 10 0 1 Gate-source voltage VGS (V) RDS (ON) - Ta 4 5 Vth - Ta 1.0 Gate threshold voltage Vth (V) Common Source 250 200 0.2 A / 1.8 V 150 0.5 A / 2.5 V 100 ID = 1.0 A / VGS = 4.0 V 50 0 -50 3 2 Drain current ID (A) 300 Drain-source on-resistance RDS (ON) (m) 2.0 0 50 Ambient temperature 100 Ta 0.5 Common source VDS = 3 V ID = 1 mA 0 -50 150 (C) 0 50 Ambient temperature 3 100 Ta 150 (C) 2006-02-27 SSM3K103TU Common Source Common Source VDS = 5 V Ta = 25C VGS = 0 V 1 0.3 0.1 0.01 1 0.1 Drain current ID S 0.1 Ta =85 C 25 C 0.01 -25 C -0.2 (A) -0.4 -0.6 -0.8 -1.0 Drain-source voltage VDS (V) C - VDS 1000 IDR G 0.001 0 10 D Ta = 25C 1 Drain reverse current IDR 3 10 (A) (S) Forward transfer admittance Yfs IDR - VDS |Yfs| - ID 10 t - ID 1000 Common Source VDD = 10 V VGS = 0 to 2.5 V (ns) (pF) 500 300 t 100 50 Coss Common Source Ta = 25C 30 tf Switching time Capacitance C Ciss Crss 10 ton tr f = 1 MHz VGS = 0 V 10 0.1 1 10 Ta = 25C RG = 4.7 toff 100 1 0.01 100 0.1 1 10 Drain current ID Drain-source voltage VDS (V) (A) t - ID 1000 600 D- b: Mounted on a ceramicPboard 800 c 2 (25.4 x 25.4 x 1.6 mm Cu Pad T : 645 mm ) (25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm ) a Transient thermal impedance Rth (C/W) Drain Power Dissipation PD (mW) a: Mounted on an FR4 board 2 b 600 a 400 10 a: Mounted on a ceramic board 200 0 -40 b a 100 2 (25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm ) b: Mounted on an FR4 board 1 -20 0 20 40 60 80 Ambient temperature 100 120 140 160 Ta 0.001 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm ) c: Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 0.36 mm x 3) 0.01 0.1 1 10 100 600 Pulse Width tw (s) (C) 4 2006-02-27 SSM3K103TU 5 2006-02-27