© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 12
1Publication Order Number:
MMUN2111LT1/D
MMUN2111LT1G,
SMMUN2111LT1G,
NSVMMUN2111LT1GSeries
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
•Available in 8 mm embossed tape and reel.
•AEC−Q101 Qualified and PPAP Capable
•S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
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1
A6x M G
G
A6x = Device Code
x = A − L (Refer to page 2)
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Device Package Shipping†
ORDERING INFORMATION
MMUN21xxLT3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMUN21xxLT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SMMUN21xxLT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SMMUN21xxLT3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD246 (Note 1)
400 (Note 2)
2.0 (Note 1)
3.2 (Note 2)
MW
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA 508 (Note 1)
311 (Note 2)
°C/W
Thermal Resistance,
Junction-to-Lead
RqJL 174 (Note 1)
208 (Note 2)
°C/W
Junction and Storage, Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
DEVICE MARKING AND RESISTOR VALUES
Device* Package Marking R1 (K) R2 (K) Shipping
MMUN2111LT1G, SMMUN2111LT1G
MMUN2111LT3G, SMMUN2111LT3G
SOT−23 A6A 10 10 3,000/Tape & Reel
10,000/Tape & Reel
MMUN2112LT1G SOT−23 A6B 22 22 3,000/Tape & Reel
MMUN2113LT1G, SMMUN2113LT1G
MMUN2113LT3G
SOT−23 A6C 47 47 3,000/Tape & Reel
10,000/Tape & Reel
MMUN2114LT1G, SMMUN2114LT1G
MMUN2114LT3G
SOT−23 A6D 10 47 3,000/Tape & Reel
10,000/Tape & Reel
MMUN2115LT1G SOT−23 A6E 10 ∞3,000/Tape & Reel
MMUN2116LT1G, SMMUN2116LT1G,
SMMUN2116LT3G
SOT−23 A6F 4.7 ∞3,000/Tape & Reel
10,000/Tape & Reel
MMUN2130LT1G (Note 3) SOT−23 A6G 1.0 1.0 3,000/Tape & Reel
MMUN2131LT1G (Note 3) SOT−23 A6H 2.2 2.2 3,000/Tape & Reel
MMUN2132LT1G, NSVMMUN2132LT1G SOT−23 A6J 4.7 4.7 3,000/Tape & Reel
MMUN2133LT1G SOT−23 A6K 4.7 47 3,000/Tape & Reel
MMUN2134LT1G, SMMUN2134LT1G
(Note 3)
SOT−23 A6L 22 47 3,000/Tape & Reel
*The “G’’ suffix indicates Pb−Free package available.
3. New devices. Updated curves to follow in subsequent data sheets.
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
− − 100
nAdc
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
− − 500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MMUN2111LT1G, SMMUN2111LT1G
MMUN2112LT1G
MMUN2113LT1G, SMMUN2113LT1G
MMUN2114LT1G, SMMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G, SMMUN2116LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G, NSVMMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G, SMMUN2134LT1G
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO 50 − −
Vdc
Collector-Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO 50 − −
Vdc
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MMUN2111LT1G, SMMUN2111LT1G
MMUN2112LT1G
MMUN2113LT1G, SMMUN2113LT1G
MMUN2114LT1G, SMMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G, SMMUN2116LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G, NSVMMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G, SMMUN2134LT1G
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
250
250
5.0
15
27
140
130
−
−
−
−
−
−
−
−
−
−
−
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
MMUN2111LT1G, SMMUN2111LT1G
MMUN2112LT1G
MMUN2113LT1G, SMMUN2113LT1G
MMUN2114LT1G, SMMUN2114LT1G
(IC = 10 mA, IB = 5 mA)
MMUN2130LT1G
MMUN2131LT1G
(IC = 10 mA, IB = 1 mA)
MMUN2115LT1G
MMUN2116LT1G, SMMUN2116LT1G
MMUN2132LT1G, NSVMMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G, SMMUN2134LT1G
VCE(sat)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Vdc
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series
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4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic UnitMaxTypMinSymbol
ON CHARACTERISTICS (Note 5)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
MMUN2111LT1G, SMMUN2111LT1G
MMUN2112LT1G
MMUN2114LT1G, SMMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G, SMMUN2116LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G, NSVMMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G, SMMUN2134LT1G
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
MMUN2113LT1G, SMMUN2113LT1G
VOL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
MMUN2111LT1G, SMMUN2111LT1G
MMUN2112LT1G
MMUN2113LT1G, SMMUN2113LT1G
MMUN2114LT1G, SMMUN2114LT1G
MMUN2133LT1G
MMUN2134LT1G, SMMUN2134LT1G
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MMUN2115LT1G
MMUN2116LT1G, SMMUN2116LT1G
MMUN2131LT1G
MMUN2132LT1G, NSVMMUN2132LT1G
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
MMUN2130LT1G
VOH
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Vdc
Input Resistor
MMUN2111LT1G, SMMUN2111LT1G
MMUN2112LT1G
MMUN2113LT1G, SMMUN2113LT1G
MMUN2114LT1G, SMMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G, SMMUN2116LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G, NSVMMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G, SMMUN2134LT1G
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
kW
Resistor Ratio
MMUN2111LT1G, SMMUN2111LT1G
MMUN2112LT1G
MMUN2113LT1G, SMMUN2113LT1G
MMUN2114LT1G, SMMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G, SMMUN2116LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G, NSVMMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G, SMMUN2134LT1G
R1/R20.8
0.8
0.8
0.17
−
−
0.8
0.8
0.8
0.055
0.38
1.0
1.0
1.0
0.21
−
−
1.0
1.0
1.0
0.1
0.47
1.2
1.2
1.2
0.25
−
−
1.2
1.2
1.2
0.185
0.56
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series
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5
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1, SMMUN2111LT1
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
TA=-25°C
25°C
123456 7 8 9 10
0.01
20
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
0 40 60 80
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN (NORMALIZED)
TA=75°C
-25°C
100
10
75°C
50
010 20 30 40
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0
TA=-25°C
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
IC/IB=10
VCE = 10 V
0
IC, COLLECTOR CURRENT (mA)
0.1
Vin, INPUT VOLTAGE (VOLTS)
1
10
100
10 20 30 40 50
TA=-25°C
25°C
75°C
VO = 0.2 V
Figure 1. Derating Curve
250
200
150
100
50
0
-50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
PD, POWER DISSIPATION (MILLIWATTS)
RqJA = 625°C/W
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current
25°C
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series
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6
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112LT1
Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN (NORMALIZED)
100
10
1100
TA=75°C
25°C
-25°C
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
010 20 30
TA=-25°C
75°C
Vin, INPUT VOLTAGE (VOLTS)
100
10
1
0.1 40 50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1 2 3 4
Vin, INPUT VOLTAGE (VOLTS)
75°C25°C
TA=-25°C
IC, COLLECTOR CURRENT (mA)
5 6 7 8 9 10
Figure 11. Input Voltage versus Output Current
0.01
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0 20 60 80
75°C
25°C
TA=-25°C
50
010 2030 40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
25°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB=10 VCE = 10 V
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series
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7
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2113LT1, SMMUN2113LT1
Figure 12. VCE(sat) versus IC
100
10
1
0.1 0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
Vin , INPUT VOLTAGE (VOLTS)
TA=-25°C
25°C
75°C
50
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1
0.01
0.001 010
IC, COLLECTOR CURRENT (mA)
25°C
Vin, INPUT VOLTAGE (VOLTS)
-25°C
Figure 15. Output Current versus Input Voltage
hFE , CURRENT GAIN (NORMALIZED)
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
25°C
-25°C
Figure 16. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01 010203040
75°C
25°C
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
12345 6789
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 2 V
IC/IB=10
TA=75°C
TA=75°C
TA=-25°C
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2114LT1, SMMUN2114LT1
35
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1 01020304050
100
10
10246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 81015202530 404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 18. DC Current Gain
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Cob , CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
f = 1 MHz
lE = 0 V
TA = 25°C
TA=-25°C
75°C
25°C
TA=75°C25°C
-25°C
VO = 5 V
VO = 0.2 V TA=-25°C
25°C
75°C
IC/IB=10
hFE, DC CURRENT GAIN (NORMALIZED)
1 10 100
IC, COLLECTOR CURRENT (mA)
-25°C
25°C
TA=75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 1520405060708090
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2115LT1
75°C
25°C
−25°C
Figure 22. VCE(sat) versus ICFigure 23. DC Current Gain
Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 26. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
10
12
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2116LT1, SMMUN2116LT1
75°C
25°C
−25°C
Figure 27. VCE(sat) versus ICFigure 28. DC Current Gain
Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 31. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
10
12
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series
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11
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2132LT1, NSVMMUN2132LT1
75°C
25°C
−25°C
Figure 32. VCE(sat) versus ICFigure 33. DC Current Gain
Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 36. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
10
12
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2133LT1
75°C
25°C
−25°C
Figure 37. VCE(sat) versus ICFigure 38. DC Current Gain
Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 41. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
5
1
3
7
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
LOAD
+12 V
Typical Application
for PNP BRTs
Figure 42. Inexpensive, Unregulated Current Source
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series
http://onsemi.com
13
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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