New Product M6035P thru M6060P Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES * Guardring for overvoltage protection * Low power losses, high efficiency * Low forward voltage drop * High forward surge capability 3 * High frequency operation 2 1 * Solder dip 260 C, 40 s TO-247AD (TO-3P) PIN 1 PIN 2 PIN 3 CASE * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 35 V, 45 V, 60 V IFSM 350 A VF at IF = 30 A 0.50 V, 0.56 V TJ max. 150 C MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) total device per diode SYMBOL M6035P VRRM 35 M6045P M6060P UNIT 45 60 V IF(AV) 60 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 350 A Peak repetitive reverse current at tp = 2 s, 1 kHz per diode IRRM 2.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/s TJ, TSTG - 65 to + 150 C Operating junction and storage temperature range Document Number: 88980 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product M6035P thru M6060P Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Instantaneous forward voltage per diode (1) IF = 10 A IF = 20 A IF = 30 A SYMBOL Reverse current per diode (2) VR TJ = 25 C TJ = 125 C Typical junction capacitance 4.0 V, 1 MHz UNIT MAX. TYP. MAX. 0.42 0.49 0.54 0.60 0.43 0.52 0.59 0.64 0.31 0.42 0.50 0.55 0.33 0.47 0.56 0.60 IR 135 110 600 160 240 140 600 160 A mA CJ 1150 - 1090 - pF V VF TJ = 125 C M6060P TYP. TJ = 25 C IF = 10 A IF = 20 A IF = 30 A M6035P M6045P Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode M6035P M6045P RJC M6060P UNIT 2.0 C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE M6045P-E3/45 6.14 45 30/tube Tube M6060P-E3/45 6.14 45 30/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 16 70 M6035P & M6045P D = 0.8 14 60 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load 50 40 30 20 10 8 T 4 0 75 100 125 150 175 D = 0.1 6 0 50 D = 1.0 D = 0.2 2 25 D = 0.3 12 10 0 D = 0.5 D = tp/T 0 5 10 15 20 25 tp 30 35 Case Temperature (C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88980 Revision: 19-May-08 New Product M6035P thru M6060P Vishay General Semiconductor 16 100 M6060P Average Power Loss (W) 14 Instantaneous Forward Current (A) D = 0.8 D = 0.5 D = 0.3 12 D = 1.0 10 D = 0.2 8 D = 0.1 6 T 4 2 D = tp/T tp 0 5 10 15 20 25 30 1 TJ = 25 C M6060P 0 35 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average Forward Current (A) Instantaneous Forward Voltage (V) Figure 3. Forward Power Loss Characteristics Per Diode Figure 6. Typical Instantaneous Forward Characteristics Per Diode 400 1000 TJ = TJ Max. 8.3 ms Single Half Sine-Wave Instantaneous Reverse Current (mA) Peak Forward Surge Current (A) TJ = 125 C 10 0.1 0 300 200 TJ = 150 C 100 TJ = 125 C 10 M6035P & M6045P 1 0.1 TJ = 25 C 0.01 100 1 10 100 10 20 30 40 50 60 70 80 90 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Figure 4. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 7. Typical Reverse Characteristics Per Diode 1000 Instantaneous Reverse Current (mA) 100 Instantaneous Forward Current (A) TJ = 150 C TJ = 150 C TJ = 125 C 10 TJ = 25 C 1 M6035P & M6045P TJ = 150 C 100 TJ = 125 C 10 M6060P 1 0.1 TJ = 25 C 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 20 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Instantaneous Forward Characteristics Per Diode Figure 8. Typical Reverse Characteristics Per Diode Document Number: 88980 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product M6035P thru M6060P Vishay General Semiconductor 10 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (C/W) Junction Capacitance (pF) 10 000 1000 M6035P & M6045P M6060P 100 0.1 1 10 Junction to Case 1 M6035P & M6045P M6060P 0.1 0.01 100 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Figure 9. Typical Junction Capacitance Per Diode Figure 10. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30 0.078 (1.98) REF. 10 0.170 (4.3) 0.840 (21.3) 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 10 TYP. Both Sides 3 1 REF. Both Sides 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.117 (2.97) 0.118 (3.0) 0.108 (2.7) 0.795 (20.2) 0.775 (19.6) 0.048 (1.22) 0.044 (1.12) 0.225 (5.7) 0.205 (5.2) www.vishay.com 4 0.030 (0.76) 0.020 (0.51) PIN 1 PIN 2 PIN 3 CASE For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88980 Revision: 19-May-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000