1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol MPSA25 MPSA27 Unit
Collector–Emitter Voltage VCES 40 60 Vdc
Emitter–Base Voltage VEBO 10 Vdc
Collector Current — Continuous IC500 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD625
5.0 mW
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0) V(BR)CES 60 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0) V(BR)CBO 60 — — Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 40 V, IE = 0)
(VCB = 50 V, IE = 0)
ICBO — — 100 nAdc
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
(VCE = 40 V, VBE = 0)
(VCE = 50 V, VBE = 0)
ICES — — 500 nAdc
Emitter Cutoff Current
(VEB = 10 Vdc) IEBO — — 100 nAdc
Order this document
by MPSA27/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR 3
BASE
2
EMITTER 1
MPSA27
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
hFE 10,000
10,000 —
——
—
—
Collector–Emitter Saturation Voltage
(IC = 100 mA, IB = 0.1 mAdc) VCE(sat) — — 1.5 Vdc
Base–Emitter On Voltage
(IC = 100 mA, VCE = 5.0 Vdc) VBE(on) — — 2.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Small Signal Current Gain
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) hfe 1.25 2.4 — —
1. Pulse Test: Pulse Width ≤ 300
m
s, Duty Cycle ≤ 2.0%.
MPSA27
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. DC Current Gain Figure 2. “ON” Voltages
Figure 3. Collector Saturation Region Figure 4. High Frequency Current Gain
Figure 5. Active Region — Safe Operating Area
100 1 k1.0
IC, COLLECTOR CURRENT (mA)
120
100
80
60
IC, COLLECTOR CURRENT (mA)
100 1 k1.0
1.4
1.0
0.8
0.6
100 5001.0
IB, BASE CURRENT (
m
A)
1.1
1.0
0.9
0.8
0.7
IC, COLLECTOR CURRENT (mA)
1.00.5
1.0
2.0
0.8
0.6
0.4
0.2 2.0200
2.0 101.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1 k
200
100
50
20
10 4.0
VCE = 5.0 V
hFE, DC CURRENT GAIN (k)
V, VOLTAGE (VOLTS)
V
h , SMALL–SIGNAL CURRENT GAIN
40
20
0102.0 3.0 20 30 200 500
TA = 125
°
C
TA = 25
°
C
TA = –55
°
C
200 5002.0 10 20
1.2
1.6 TA = 25
°
C
VBE(S) @ IC/IB = 1.0 k
VCE(S) @ IC/IB = 1.0 k
VBE(ON) @ VCE = 5.0 V
2.0 5.0 10 20 50 10 20 100 200
, COLLECTOR CURRENT (mA)IC
20 50
500
1.0 ms
1.0 s
TA = 25
°
C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
100
m
s
TC = 25
°
C
TA = 25
°
C
IC = 10 mA
IC = 100 mA IC = 250 mA
IC = 500 mA
1 k0.1 0.2 0.5
1.3
1.2
1.4
1.6
1.5
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
4.0
5.0 50050
VCE = 5.0 V
f = 100 MHz
TA = 25
°
C
6.0 40 60
3.0 30
fe
MPSA27
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–04
(TO–226AA)
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