TCST1030(L)
Vishay Telefunken
1 (8)
www.vishay.comDocument Number 83763
Rev. A3, 08–Jun–99
Transmissive Optical Sensor with Phototransistor
Output
Description
This device has a compact construction where the
emitting-light sources and the detectors are located
face-to-face on the same optical axis.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.
Applications
D
Position sensor for shaft encoder
D
Detection of opaque material such as paper,
IBM cards, magnetic tapes etc.
D
Limit switch for mechanical motions in VCR
D
General purpose – wherever the space is limited
D
End of tape, begin of tape in streamer
Features
D
Gap 3 mm
D
Package height: 8 mm
D
Plastic polycarbonate housing
D
Ambient light protected
D
L = long leads
D
Current Transfer Ratio (CTR) of typical 25%
95 10529
96 11970
AE
CC
Order Instruction
Ordering Code Resolution (mm) / Aperture (mm) Remarks
TCST1030 / non High density packing
leads (3.4 mm)
TCST1030(L) / non High density packing
long leads (16.2 mm)
TCST1030(L)
Vishay Telefunken
www.vishay.com
2 (8) Rev. A3, 08–Jun–99
Document Number 83763
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage VR6 V
Forward current IF60 mA
Forward surge current tp ≤ 10
m
s IFSM 3 A
Power dissipation Tamb ≤ 25
°
C PV100 mW
Junction temperature Tj100
°
C
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7 V
Collector current IC100 mA
Power dissipation Tamb ≤ 25
°
C PV150 mW
Junction temperature Tj100
°
C
Coupler Parameter Test Conditions Symbol Value Unit
Total power dissipation Tamb ≤ 25
°
C Ptot 250 mW
Operation temperature range Tamb –25 to +85
°
C
Storage temperature range Tstg –25 to +100
°
C
Soldering temperature 1.6 mm from case, t ≤ 10 s Tsd 260
°
C
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 60 mA VF1.25 1.5 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA VCEO 70 V
Emitter collector voltage IE = 10
m
A VECO 7 V
Collector dark current VCE = 25 V, IF = 0, E = 0 ICEO 10 100 nA
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector current VCE = 5 V, IF = 10 A IC1.2 2.4 mA
Collector emitter
saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.8 V
TCST1030(L)
Vishay Telefunken
3 (8)
www.vishay.comDocument Number 83763
Rev. A3, 08–Jun–99
Switching Characteristics
Parameter Test Conditions Symbol Typ. Unit
Turn-on time IC = 1 mA, VCE = 5 V, RL = 100
W
(see figure 1) ton 15.0
m
s
Turn-off time CCE Lfoff 10.0
m
s
Channel I
Channel II
95 10890
+ 5 V
IC = 2 mA; adjusted through
input amplitude
IF
0IF
RG = 50
W
tp
tp = 50
m
s
T= 0.01
Oscilloscope
RL
y
1 M
W
CL
x
20 pF
50
W
100
W
Figure 1. Test circuit
tpt
t
0
0
10%
90%
100%
tr
td
ton
tstf
toff
IF
IC
96 11698
tppulse duration
tddelay time
trrise time
ton (= td + tr) turn-on time
tsstorage time
tffall time
toff (= ts + tf) turn-off time
Figure 2. Switching times
TCST1030(L)
Vishay Telefunken
www.vishay.com
4 (8) Rev. A3, 08–Jun–99
Document Number 83763
Typical Characteristics (Tamb = 25
_
C, unless otherwise specified)
0 30 60 90 120
0
100
200
300
400
150
95 11088
P – Total Power Dissipation ( mW )
tot
Tamb – Ambient Temperature ( °C )
Coupled device
Phototransistor
IR-diode
Figure 3. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )96 11862
F
I – Forward Current ( mA )
Figure 4. Forward Current vs. Forward Voltage
0.6
0.7
0.8
0.9
1.0
1.1
1.2
–30–20–10 0 10 20 30 40 50 60 70 80 90 100
Tamb – Ambient Temperature ( °C )96 11767
CTR – Relative Current Transfer Ratio
rel
VCE=5V
IF=20mA
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
0255075
1
10
100
1000
10000
I – Collector Dark Current,
CEO
Tamb – Ambient Temperature ( °C )
100
95 11090
with open Base ( nA )
VCE=25V
IF=0
Figure 6. Collector Dark Current vs. Ambient Temperature
0.01
0.10
1.00
10.00
0.1 1.0 10.0 100.0
IF – Forward Current ( mA )96 11768
VCE=10V
I – Collector Current ( mA )
C
Figure 7. Collector Current vs. Forward Current
0.01
0.10
1.00
10.00
0.1 1.0 10.0 100.0
VCE – Collector Emitter Voltage ( V )96 11769
I – Collector Current ( mA )
C
IF=20mA
10mA
5mA
2mA
1mA
Figure 8. Collector Current vs. Collector Emitter Voltage
TCST1030(L)
Vishay Telefunken
5 (8)
www.vishay.comDocument Number 83763
Rev. A3, 08–Jun–99
1
10
100
0.1 1.0 10.0 100.0
IF – Forward Current ( mA )96 11770
VCE=5V
CTR – Current Transfer Ratio ( % )
Figure 9. Current Transfer Ratio vs. Forward Current
02 46
IC – Collector Current ( mA )
10
95 11086
t / t – Turn on / Turn off Time ( s )
off
m
on
Non Saturated
Operation
VS=5V
RL=100
W
ton
0
5
10
15
20
8
toff
Figure 10. Turn on / off Time vs. Collector Current
0.4 0.2 0.2 0.4
10
30
50
70
90
130
I – Relative Collector Current
Crel
s – Displacement ( mm )95 11087
110
0
0
s
Figure 11. Relative Collector Current vs. Displacement
TCST1030(L)
Vishay Telefunken
www.vishay.com
6 (8) Rev. A3, 08–Jun–99
Document Number 83763
Dimensions of TCST1030 in mm
96 12074
TCST1030(L)
Vishay Telefunken
7 (8)
www.vishay.comDocument Number 83763
Rev. A3, 08–Jun–99
Dimensions of TCST1030L in mm
95 11268
TCST1030(L)
Vishay Telefunken
www.vishay.com
8 (8) Rev. A3, 08–Jun–99
Document Number 83763
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
