MSDT100
MSDT100 – Rev 0 www.microsemi.com
Oct, 2011 1/5
Module Type
â—†Diode
Maximum Ratings
Symbol Item Conditions Values Units
ID Output Current(D.C.) Tc=100℃ Three phase full wave 100 A
IFSM Surge forward current t=10mS Tvj =45℃ 1200 A
i2t Circuit Fusing Consideration 7200 A2s
Visol Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1min 3000 V
Tvj Operating Junction Temperature -40 to +150 ℃
Tstg Storage Temperature -40 to +125 ℃
Mt Mounting Torque To terminals(M5) 3±15% Nm
Ms To heatsink(M5) 3±15% Nm
Weight Module（Approximately） 210 g
Thermal Characteristics
Symbol Item Conditions Values Units
Rth(j-c) Thermal Impedance, max. Junction to Case(TOTAL) 0.18 ℃/W
Rth(c-s) Thermal Impedance, max. Case to Heatsink 0.10 ℃/W
Electrical Characteristics
Three Phase Bridge
+ Thyristor
VRRM / VDRM 800 to 1600V
IF
A
V/ IT
A
V 100Am
p
Features
y Blocking voltage:800 to 1600V
y Three Phase Bridge and a Thyristor
y Isolated Module package
Applications
y Inverter for AC or DC motor control
y Current stabilized power supply
y Switching power supply
y UL E243882 approved
TYPE VRRM / VDRM VRSM
MSDT100-08
MSDT100-12
MSDT100-16
800V
1200V
1600V
900V
1300V
1700V
Circuit
Symbol Item Conditions Values Units
VFM Forward Voltage Drop, max. T=25℃ IF =100A 1.35 V
IRRM Repetitive Peak Reverse Current,
max.
Tvj =25℃ VRD=VRRM
Tvj =150℃ VRD=VRRM
≤0.5
≤6
mA
mA
MSDT100
Document Number: MSDT100-Rev0 www.microsemi.com
Oct.19, 2011 2/5
â—†Thyristor
Maximum Ratings
Electrical and Thermal Characteristics
Symbol Item Conditions Values Units
ITAV Average On-State Current Tc=92℃, Single Phase half wave
180o conduction 100 A
ITSM Surge On-State Current TVJ=45 t=10ms (50Hz), sine
VR=0 1200 A
i2t Circuit Fusing Consideration 7200 A2s
Visol Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1 min 3000 V
Tvj Operating Junction Temperature -40 to +125 ℃
Tstg Storage Temperature -40 to +125 ℃
Mt Mounting Torque To terminals(M5) 3±15% Nm
Ms To heatsink(M5) 3±15% Nm
di/dt Critical Rate of Rise of On-State
Current
TVJ=TVJM, VD=1/2VDRM ,IG =100mA
diG/dt=0.1A/μs 150 A/μs
dv/dt Critical Rate of Rise of Off-State
Voltage, min.
TJ=TVJM,VD=2/3VDRM,linear voltage
rise 500 V/μs
Values
Symbol Item Conditions Min. Typ. Max. Units
VTM Peak On-State Voltage, max. T=25℃ I
T =100A 1.25 V
IRRM/IDRM
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
TVJ=TVJM ,VR=VRRM ,VD
=VDRM 20 mA
VGT Gate Trigger Voltage, max. TVJ =25℃ , VD =6V 3 V
IGT Gate Trigger Current, max. TVJ =25℃ , VD =6V 150 mA
Rth(j-c) Thermal Impedance, max. Junction to Case 0.26 ℃/W
Rth(c-s) Thermal Impedance, max. Case to Heatsink 0.10 ℃/W
MSDT100
Document Number: MSDT100-Rev0 www.microsemi.com
Oct.19, 2011 3/5
Performance Curves
Fi
g
1. Power dissi
p
ation Fig2. Forward Current Derating Curve
Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge
Current
Fig5. Forward Characteristics
0.001 t 0.01 0.1 1.0 10 S 100
0.20
℃/ W
0.10
0
Zth(j-C)
1 10 cycles 100
50HZ
2000
A
1000
0
0.5 VF 1.0 1.5 2.0 V 2.5
1000
A
100
IF
10
max.
Tj=25℃
0 Tc 50 100 ℃ 150
200
A
160
120
80
40
0
ID
Fi
g
6. SCR Power dissi
p
ation
Single phase half wave
Tj=25℃ start
Per one element
Three phase
0 ID 20 40 60 80 A 100
300
W
240
180
120
60
Pvtot
0
Three phase
150
W
120
90
60
30
PTAV
0 0 ID 20 40 60 80 A 100
MSDT100
Document Number: MSDT100-Rev0 www.microsemi.com
Oct.19, 2011 4/5
Fig7. SCR Forward Current Derating Curve Fig8. SCR Transient thermal impedance
Fig9. SCR Forward Characteristics
0.5 VTM 1.0 1.5 2.0 V 2.5
max.
0 Tc 50 100 ℃ 150
200
A
160
120
80
40
0
ITAVM
0.001 t 0.01 0.1 1.0 10 S 100
0.50
℃/ W
0.25
0
1000
A
100
IT
10
Tj=25℃
Zth(j-C)
Average Gate Power (3W)
Peak Gate Power (10W)
Fig10. Gate trigger Characteristics
max.
10
1
IG 10
2
10
3
mA 10
4
Peak Forward Gate Voltage (10V)
100
V
10
1
VG
0.1
Maximum Gate Non-Trigger Voltage
25℃
-10℃
135℃
Peak Gate Current (3A)
MSDT100
Document Number: MSDT100-Rev0 www.microsemi.com
Oct.19, 2011 5/5
Package Outline Information
CASE: M4
Dimensions in mm
