MSDT100 Three Phase Bridge + Thyristor 800 to 1600V 100Amp VRRM / VDRM IFAV / ITAV Features y y Circuit y Blocking voltage:800 to 1600V Three Phase Bridge and a Thyristor Isolated Module package Applications y y y y Inverter for AC or DC motor control Current stabilized power supply Switching power supply UL E243882 approved Module Type TYPE VRRM / VDRM VRSM MSDT100-08 MSDT100-12 MSDT100-16 800V 1200V 1600V 900V 1300V 1700V Diode Maximum Ratings Symbol ID IFSM i2t Visol Tvj Tstg Mt Ms Item Output Current(D.C.) Surge forward current Circuit Fusing Consideration Isolation Breakdown Voltage(R.M.S) Units 100 1200 A A 7200 A2s 3000 V -40 to +150 Storage Temperature -40 to +125 315% 315% Nm Nm 210 g Values Units Junction to Case(TOTAL) 0.18 /W Case to Heatsink 0.10 /W Mounting Torque a.c.50HZ;r.m.s.;1min Values Operating Junction Temperature To terminals(M5) To heatsink(M5) ModuleApproximately Weight Thermal Characteristics Symbol Item Rth(j-c) Thermal Impedance, max. Rth(c-s) Conditions Tc=100 Three phase full wave t=10mS Tvj =45 Thermal Impedance, max. Conditions Electrical Characteristics Symbol Values Units VFM Forward Voltage Drop, max. Item T=25 IF =100A 1.35 V IRRM Repetitive Peak Reverse Current, max. Tvj =25 VRD=VRRM Tvj =150 VRD=VRRM 0.5 6 mA mA MSDT100 - Rev 0 Oct, 2011 Conditions www.microsemi.com 1/5 MSDT100 Thyristor Maximum Ratings Symbol Item Conditions Values Units ITAV Average On-State Current Tc=92, Single Phase half wave 180o conduction 100 A ITSM Surge On-State Current TVJ=45 VR=0 1200 A 7200 A2s 3000 V Operating Junction Temperature -40 to +125 Storage Temperature -40 to +125 315% 315% Nm Nm i2t Visol Tvj Tstg Mt Ms t=10ms (50Hz), sine Circuit Fusing Consideration Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1 min Mounting Torque To terminals(M5) To heatsink(M5) di/dt Critical Rate of Rise of On-State Current TVJ=TVJM, VD=1/2VDRM ,IG =100mA diG/dt=0.1A/s 150 A/s dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM,VD=2/3VDRM,linear voltage rise 500 V/s Electrical and Thermal Characteristics Symbol VTM IRRM/IDRM VGT Item Conditions Values Min. Typ. Max. Units 1.25 V TVJ=TVJM ,VR=VRRM ,VD =VDRM 20 mA Gate Trigger Voltage, max. TVJ =25 , VD =6V 3 V Peak On-State Voltage, max. T=25 IT =100A Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. IGT Gate Trigger Current, max. mA Thermal Impedance, max. TVJ =25 , VD =6V Junction to Case 150 Rth(j-c) 0.26 /W Rth(c-s) Thermal Impedance, max. Case to Heatsink 0.10 /W Document Number: MSDT100-Rev0 Oct.19, 2011 www.microsemi.com 2/5 MSDT100 Performance Curves 300 200 Three phase W 240 160 180 120 120 80 60 40 Pvtot ID 0 Three phase A 0 0 ID 20 40 60 80 A 100 0 Tc Fig1. Power dissipation 50 100 150 Fig2. Forward Current Derating Curve 0.20 2000 / W A 50HZ Zth(j-C) 0.10 Per one element 1000 Single phase half wave Tj=25 start 0 0.001 t 0.01 0.1 1.0 10 0 S 100 10 cycles 100 Fig4. Max Non-Repetitive Forward Surge Current Fig3. Transient thermal impedance 1000 1 150 max. W A 120 90 100 60 30 IF Tj=25 PTAV 10 0.5 VF 1.0 1.5 2.0 V 0 2.5 Fig5. Forward Characteristics Document Number: MSDT100-Rev0 Oct.19, 2011 0 ID 20 40 60 80 A 100 Fig6. SCR Power dissipation www.microsemi.com 3/5 MSDT100 200 0.50 A / W 160 120 0.25 Zth(j-C) 80 40 ITAVM 0 0 Tc 50 100 0 150 0.1 1.0 10 S 100 Fig8. SCR Transient thermal impedance Fig7. SCR Forward Current Derating Curve 100 max. max. A V Pe ak Peak Forward Gate Voltage (10V) 10 Av er ag e 100 G at e Po w G er (3 W at e Po we r( 10 W ) ) 1 -10 Peak Gate Current (3A) 1000 0.001 t 0.01 135 IT 10 VG Tj=25 0.5 VTM 1.0 1.5 2.0 V 2.5 0.1 Fig9. SCR Forward Characteristics Document Number: MSDT100-Rev0 Oct.19, 2011 25 101 IG 102 Maximum Gate Non-Trigger Voltage 103 mA 104 Fig10. Gate trigger Characteristics www.microsemi.com 4/5 MSDT100 Package Outline Information CASE: M4 Dimensions in mm Document Number: MSDT100-Rev0 Oct.19, 2011 www.microsemi.com 5/5