TEMPFET(R) BTS 112 A Features N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab 1 Pin 1 2 3 G D S Type VDS ID RDS(on) Package Ordering Code BTS 112A 60 V 12 A 0.15 TO-220AB C67078-S5014-A3 2 3 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 60 V Drain-gate voltage, RGS = 20 k VDGR 60 Gate-source voltage VGS 20 Continuous drain current, TC = 33 C ID 12 ISO drain current TC = 85 C, VGS = 10 V, VDS = 0.5 V ID-ISO 2.5 Pulsed drain current, TC = 25 C ID puls 48 Short circuit current, Tj = - 55 ... + 150 C ISC 27 Short circuit dissipation, Tj = - 55 ... + 150 C PSCmax 400 Power dissipation Ptot 40 Operating and storage temperature range Tj, Tstg - 55 ... + 150 DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 55/150/56 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA 3.1 75 A W C - K/W 1 19.02.04 TEMPFET(R) BTS 112 A Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 60 - - 2.5 3.0 3.5 Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1.0 mA VGS(th) Zero gate voltage drain current VGS = 60 V, VDS = 0 Tj = 25 C Tj = 150 C I DSS Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 C Tj = 150 C I GSS Drain-source on-state resistance VGS = 10 V, ID = 7.5 A RDS(on) V A - - 0.1 10 1.0 100 - - 10 2 100 4 - 0.12 0.15 3.0 5.7 - - 360 480 - 160 250 - 50 90 Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 t - 15 25 - 30 45 Turn-off time toff, (toff = td(off) + tf) td(off) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 t - 40 55 - 55 75 nA A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID = 7.5 A gfs Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss r f 2 S pF ns 19.02.04 TEMPFET(R) BTS 112 A Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS - - 12 Pulsed source current I SM - - 48 Diode forward on-voltage I F = 12 A, VGS = 0 V VSD Reverse recovery time I F = I S, diF/dt = 100 A/s, VR = 30 V t rr Reverse recovery charge I F = I S, diF/dt = 100 A/s, VR = 30 V Q rr A V - 1.3 1.6 ns - 60 - C - 0.1 - - 1.4 1.5 - - 10 - - 10 - - 600 0.05 0.05 0.1 0.2 0.5 0.3 150 - - 0.5 - 2.5 Temperature Sensor Forward voltage ITS(on) = 10 mA, Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C VTS(on) Forward current Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C ITS(on) Holding current, VTS(off) = 5.0 V, Tj = 25 C Tj = 150 C IH Switching temperature VTS = 5.0 V TTS(on) Turn-off time VTS = 5.0 V, ITS(on) = 2 mA toff 3 V mA C s 19.02.04 TEMPFET(R) BTS 112 A Examples for short-circuit protection at Tj = - 55 ... + 150 C, unless otherwise specified. Parameter Symbol Examples Unit 1 2 - Drain-source voltage VDS 15 30 - Gate-source voltage VGS 6.8 5.0 - Short-circuit current ISC 27 11 - A Short-circuit dissipation PSC 400 330 - W Response time Tj = 25 C, before short circuit tSC(off) ms 20 Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = - 55 ... +150C V 20 - Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = - 55 ... + 150 C 4 19.02.04 TEMPFET(R) BTS 112 A Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 s Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 C 5 19.02.04 TEMPFET(R) BTS 112 A Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 5 A, VGS = 10 V Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 s, VDS = 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 s, VDS = 25 V 6 19.02.04 TEMPFET(R) BTS 112 A Continuous drain current ID = f (TC) Parameter: VGS - 10 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 s Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = - 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz 7 19.02.04 TEMPFET(R) BTS 112 A Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T 8 19.02.04 TEMPFET(R) BTS 112 A TO 220 AB Standard TO 220 AB SMD Version E 3045 Tape & reel E 3045 A Ordering Code C67078-S5014-A4 C67078-S5014-A5 4.4 3.7 1.3 15.6 9.2 17.5 1) 2) 13.5 3) 4.6 1 12.8 2.8 9.9 9.5 Ordering Code C67078-S5014-A3 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 9 19.02.04 TEMPFET(R) BTS 112 A Edition 04.97 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany (c) Infineon Technologies AG 2000. 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