BAV70T - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

File under Discrete Semiconductors, SC01

1997 Dec 19

DISCRETE SEMICONDUCTORS

BAV70T

High-speed double diode

M3D173

1997 Dec 19 2

Philips Semiconductors Product speciﬁcation

High-speed double diode BAV70T

FEATURES

•Very small plastic SMD package

•High switching speed: max. 4 ns

•Continuous reverse voltage:

max. 75 V

•Repetitive peak reverse voltage:

max. 85 V

•Repetitive peak forward current:

max. 500 mA.

APPLICATIONS

•High-speed switching in e.g.

surface mounted circuits.

DESCRIPTION

Two high-speed switching diodes in a

common cathode configuration,

fabricated in planar technology, in a

very small rectangular SMD SOT416

(SC-75) package.

PINNING

PIN DESCRIPTION

1 anode 1

2 anode 2

3 common cathode

Fig.1 Simplified outline (SOT416; SC-75) and symbol.

Marking code: A4.

handbook, halfpage

MAM368

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode (unless otherwise speciﬁed)

VRRM repetitive peak reverse voltage −85 V

VRcontinuous reverse voltage −75 V

IFcontinuous forward current Ts=90°C; see Fig.2

single diode loaded −150 mA

both diodes loaded −75 mA

IFRM repetitive peak forward current −500 mA

IFSM non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs−4A

t=1ms −1A

t=1s −0.5 A

Ptot total power dissipation Ts=90°C; one diode loaded −170 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −+150 °C

1997 Dec 19 3

Philips Semiconductors Product speciﬁcation

High-speed double diode BAV70T

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

Per diode

VFforward voltage see Fig.3

IF= 1 mA 0.715 V

IF= 10 mA 0.855 V

IF=50mA 1 V

F= 150 mA 1.25 V

IRreverse current see Fig.5

VR= 25 V 30 nA

VR=75V 2 µA

R= 25 V; Tj= 150 °C60µA

= 75 V; Tj= 150 °C 100 µA

Cddiode capacitance VR= 0; f = 1 MHz; see Fig.6 1.5 pF

trr reverse recovery time switching from IF= 10 mA to IR=10mA;

L= 100 Ω; measured at IR= 1 mA; see Fig.7 4ns

fr forward recovery voltage switched to IF= 10 mA; tr= 20 ns; see Fig.8 1.75 V

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point one diode loaded 350 K/W

1997 Dec 19 4

Philips Semiconductors Product speciﬁcation

High-speed double diode BAV70T

GRAPHICAL DATA

Fig.2 Maximum permissiblecontinuous forward

current per diode as a function of

soldering point temperature.

(1) One diode loaded.

(2) Both diodes loaded.

handbook, halfpage

(mA)

300

200

100

0200

Ts (°C)

100

MBK249

(1)

(2)

(1) Tj= 150 °C; typical values.

(2) Tj=25°C; typical values.

(3) Tj=25°C; maximum values.

Fig.3 Forward current as a function of

forward voltage.

handbook, halfpage

300

(mA)

100

200

MBG382

1VF (V)

(1) (3)(2)

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

Based on square wave currents.

Tj=25°C prior to surge.

handbook, full pagewidth

MBG704

10 tp (µs)

IFSM

(A)

102

10−1104

102103

1997 Dec 19 5

Philips Semiconductors Product speciﬁcation

High-speed double diode BAV70T

Fig.5 Reverse current as a function of

junction temperature.

102

200

MGA885

100 T ( C)

( A)µ

175 V

25 V

typ

max

typ

10 2

10 1

V = 75 V

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj=25°C.

handbook, halfpage

0816124

0.8

0.6

0.4

0.2

MBG446

VR (V)

(pF)

1997 Dec 19 6

Philips Semiconductors Product speciﬁcation

High-speed double diode BAV70T

Fig.7 Reverse recovery voltage test circuit and waveforms.

(1) IR= 1 mA.

Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty factor δ= 0.05.

Oscilloscope: rise time tr= 0.35 ns.

handbook, full pagewidth

trr

(1)

IFt

output signal

trt

10%

90%

input signal

V = V I x R

RF S

R = 50

SΩIF

D.U.T.

R = 50

iΩ

SAMPLING

OSCILLOSCOPE

MGA881

Fig.8 Forward recovery voltage test circuit and waveforms.

Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp≥100 ns; duty factor δ≤0.005.

trt

10%

90%

input

signal

R = 50

SΩ

R = 50

iΩ

OSCILLOSCOPE

Ω1 k Ω450

D.U.T.

MGA882

Vfr

output

signal

1997 Dec 19 7

Philips Semiconductors Product speciﬁcation

High-speed double diode BAV70T

PACKAGE OUTLINE

UNIT A1

max bpcDEe

pQw

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1 0.30

0.15 0.25

0.10 1.8

1.4 0.9

0.7 0.5

11.75

1.45 0.2

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.23

0.13

SOT416 SC-75

detail X

EAB

vMA

0 0.5 1 mm

scale

0.95

0.60

Plastic surface mounted package; 3 leads SOT416

97-02-28

1997 Dec 19 8

Philips Semiconductors Product speciﬁcation

High-speed double diode BAV70T

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1997 Dec 19 9

Philips Semiconductors Product speciﬁcation

High-speed double diode BAV70T

NOTES

1997 Dec 19 10

Philips Semiconductors Product speciﬁcation

High-speed double diode BAV70T

NOTES

1997 Dec 19 11

Philips Semiconductors Product speciﬁcation

High-speed double diode BAV70T

NOTES

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Printed in The Netherlands 117027/00/02/pp12 Date of release: 1997 Dec 19 Document order number: 9397 750 02872