Type 2N3764
Geometry 6706
Polarity PNP
Qual Level: JAN - JANTXV
Data Sheet No. 2N3764
Generic Part Number:
REF: MIL-PRF-19500/396
Features:
• General-purpose transistor for
switching and amplifier applica-
tons.
• Housed in a TO-46 case.
• Also available in chip form using
the 6706 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/396 which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter Voltage VCEO 40 V
Collector-Base Voltage VCBO 40 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current, Continuous IC1.5 mA
Operating Junction Temperature TJ-55 to +200 oC
Storage Temperature TSTG -55 to +200 oC
Maximum Ratings
TC = 25oC unless otherwise specified
TO-46
Data Sheet No. 2N3764
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 10 µA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 µA
Collector-Emitter Cutoff Current
V
EB
= 2.0 V, V
CE
= 20 V
Collector-Emitter Cutoff Current
V
EB
= 2.0 V, V
CE
= 20 V, T
A
= 150
o
C
Collector-Base Cutoff Current
V
CB
= 20 V
Emitter-Base Cutoff Current
V
EB
= 2.0 V
IEBO --- 200 nA
ICBO --- 100 nA
ICEX2 --- 150 µA
nA
V
Electrical Characteristics
TC = 25oC unless otherwise specified
V
V
V(BR)CBO 40 ---
ICEX1 --- 100
V(BR)CEO 40 ---
V(BR)EBO 5.0 ---
ON Characteristics
Symbol
Min
Max
Unit
Forward current Transfer Ratio
I
C
= 10 mA, V
CE
= 1.0 V
h
FE1
35
---
---
I
C
= 150 mA, V
CE
= 1.0 V (pulse test)
h
FE2
40
---
---
I
C
= 500 mA, V
CE
= 1.0 V (pulse test)
h
FE3
40
140
---
I
C
= 1.0 A, V
CE
= 1.5 V (pulse test)
h
FE4
30
120
---
I
C
= 1.5 A, V
CE
= 5.0 V (pulse test)
h
FE5
30
---
---
I
C
= 500 mA, V
CE
= 1.0 V (pulsed), T
A
= -55
o
C
h
FE6
20
---
---
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1 mA (pulse test)
V
CE(sat)1
---
0.1
V dc
I
C
= 150 mA, I
C
= 15 mA (pulse test)
V
CE(sat)2
---
0.22
V dc
I
C
= 500 mA, I
B
= 50 mA (pulse test)
V
CE(sat)3
---
0.50
V dc
I
C
= 1.0 A, I
C
= 100 mA (pulse test)
V
CE(sat)4
---
0.90
V dc
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1 mA
V
BE(sat)1
---
0.8
V dc
I
C
= 150 mA, I
B
= 15 mA (pulse test)
V
BE(sat)2
---
1.0
V dc
I
C
= 500 mA, I
B
= 50 mA (pulse test)
V
BE(sat)3
---
1.2
V dc
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
V
BE(sat)4
---
1.4
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 10 V, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
CIBO --- 80 pF
pF
COBO --- 25
---
|hFE|1.8 6.0
Switching Characteristics
Per Figure 1, MIL-S-19500/396D
Pulse Delay Time td--- 8ns
Pulse Rise Time tr--- 35 ns
Pulse Storage Time ts--- 80 ns
Pulse Fall Time tf--- 35 ns
Symbol Min Max Unit
