G
S
D
2N7000
N−Ch, Enhancement Mode
Field Effect Transistor
TO−92 Type Package
Features:
DHigh Density Cell Design for Low RDS(ON)
DVoltage Controlled Small Signal Switch
DRugged and Reliable
DHigh Saturation Current Capability
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−Source Voltage, VDSS 60V.........................................................
Drain−Gate Voltage (RGS 1M), VDGR 60V..............................................
Gate−Source Voltage, VGS
Continuous 20V.................................................................
Non−Repetitive (tp 50s) 40V...................................................
Maximum Drain Current, ID
Continuous 200mA...............................................................
Pulsed 500mA...................................................................
Maximum Power Dissipation, PD400mW.................................................
Derate above 25C 3.2mW/C.....................................................
Operating Junction Temperature Range, TJ−55 to +150C..................................
Storage Temperature Range, Tstg −55 to +150C..........................................
Thermal Resistance, Junction−to−Ambient, Rth(JA) 312.5C/W................................
Maximum Lead Temperature for Soldering Purposes, 1/16” from Case, 10sec), TL+300C.......
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Drain−Source Breakdown Voltage BVDss VGS = 0V, ID = 10A 60 − − V
Zero−Gate−Voltage Drain Current IDSS VDS = 48V,
VGS = 0
− − 1.0 A
TJ = +125C− − 1.0 mA
Gate−Body Leakage Current, Forward IGSSF VGSF = 15V, VDS = 0 − − 10 nA
Gate−Body Leakage Current, Reverse IGSSR VGSF = −15V, VDS = 0 − − −10 nA