2N2223
2N2223A
SILICON
DUAL NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2223 and 2N2223A
are dual silicon NPN transistors manufactured by the
epitaxial planar process utilizing two individual chips
mounted in a hermetically sealed metal case designed
for differential amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCER 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 500 mA
Power Dissipation (One Die) PD 500 mW
Power Dissipation (Both Dice) PD 600 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=80V 10 nA
ICBO V
CB=80V, TA=150°C 15 A
IEBO V
EB=5.0V 10 nA
BVCBO I
C=100µA 100 V
BVCER I
C=100mA, REB=10 80 V
BVCEO I
C=30mA 60 V
BVEBO I
E=100µA 7.0 V
VCE(SAT) I
C=50mA, IB=5.0mA 1.2 V
VBE(SAT) I
C=50mA, IB=5.0mA 0.9 V
hFE V
CE=5.0V, IC=10µA 15
hFE V
CE=5.0V, IC=100µA 25 150
hFE V
CE=5.0V, IC=10mA 50 200
fT V
CE=10V, IC=50mA, f=20MHz 50 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 15 pF
Cib V
BE=0.5V, IC=0, f=1.0MHz 85 pF
hib V
CB=5.0V, IC=1.0mA, f=1.0kHz 20 30
hrb V
CB=5.0V, IC=1.0mA, f=1.0kHz 3.0 x10-4
hfe V
CE=5.0V, IC=1.0mA, f=1.0kHz 40 200
hob V
CB=5.0V, IC=1.0mA, f=1.0kHz 0.5 S
MATCHING CHARACTERISTICS: 2N2223 2N2223A UNITS
SYMBOL TEST CONDITIONS MIN MAX MIN MAX
hFE1/hFE2 (Note 1) VCE=5.0V, IC=100µA 0.8 1.0 0.9 1.0
|VBE1-VBE2| V
CE=5.0V, IC=100µA - 15 - 5.0 mV
Notes: (1) The lowest reading is taken as hFE1.
TO-78 CASE
R0 (22-January 2014)
www.centralsemi.com