CPD83V-1N4148
High Speed Switching Diode Die
0.15 Amp, 100 Volt
Die Size 11 x 11 MILS
Die Thickness 7.1 MILS
Anode Bonding Pad Size 3.35 x 3.35 MILS
Top Side Metalization Al – 30,000Å
Back Side Metalization Au-As – 9,000Å
Scribe Alley Width 2.3 MILS
Wafer Diameter 5 INCHES
Gross Die Per Wafer 137,880
The CPD83V-1N4148 is a silicon high speed switching diode ideal for all types of commercial,
industrial, entertainment, and computer applications.
MECHANICAL SPECIFICATIONS:
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 100 V
Peak Working Reverse Voltage VRWM 75 V
Average Forward Current IO 150 mA
Continuous Forward Current IF 200 mA
Peak Forward Surge Current, tp=1.0μs IFSM 2.0 A
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR V
R=20V 25 nA
BVR I
R=1.0mA 100 V
BVR I
R=100μA 75 V
VF I
F=10mA 1.0 V
CJ V
R=0, f=1.0MHz 4.0 pF
trr V
R=6.0V, IF=10mA, Irr=1.0mA, RL=100Ω 4.0 ns
BACKSIDE CATHODE R0
ANODE
R1 (16-September 2016)
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CPD83V-1N4148
Typical Electrical Characteristics
R1 (16-September 2016)
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CPD83V-1N4148
Typical Electrical Characteristics
R1 (16-September 2016)
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(001)
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