2N1412 Transistors Ge PNP Power BJT Military/High-RelN V(BR)CEO (V)65 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W)87 Maximum Operating Temp (oC)100o I(CBO) Max. (A)4.0m @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)12 @I(B) (A) (Test Condition)2.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.50 @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq10k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)4.0 t(r) Max. (s) Rise time t(f) Max. (s) Fall time. Package StyleTO-36