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TO-3 Internal Schematic Diagram
Absolute Maximum Ratings
Parameter Symbol
Value
Unit
NPN MJ3001
Collector-Base Voltage (IE= 0) VCBO 80
V
Collector-Emitter Voltage (IB= 0) VCEO
Emitter-Base Voltage (IC = 0) VEBO 5
Collector Current IC10
A
Base Current IB0.2
Total Dissipation at Tc≤25°C Ptot 150
W
Storage Temperature Tstg -65 to 200
Maximum Operating Junction Temperature Tj200 °C
Thermal Characteristics
Maximum Thermal Resistance Junction-case Rthj-case 1.17 °C/W
Description:
The MJ3001 is a silicon epitaxial-base NPN power transistors in monolithic darlington
configuration and are mounted in JEDEC TO-3 metal case. They are intented for use in power
linear and switching applications.
Electrical Characteristics (Tcase = 25°C unless otherwise specified)
Parameter Test Conditions Symbol Minimum Maximum Unit
Collector Cut-off Current (RBE = 1KΩ)
VCE = 80V
Tcase = 150°C
VCE = 80V
ICER -
1
5µA
Collector Cut-off Current (IB= 0) VCE = 30V
VCE = 40V ICEO -1
1
1165911
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Electrical Characteristics (Tcase = 25°C unless otherwise specified)
Parameter Test Conditions Symbol Minimum Maximum Unit
Emitter Cut-off Current (IC= 0) VEB = 5V IEBO - 2
Collector-Emitter Sustaining Voltage (IB= 0) IC= 100mA VCEO (sus)* 80 -
VCollector-Emitter Saturation Voltage IC= 5A IB= 20mA
IC= 10A IB= 50mA VCE (sat)* -2
4
Base-Emitter Voltage IC= 5A VCE = 3V VBE* - 3
DC Current Gain IC= 5A VCE = 3V hFE* 1000 - -
*Pulsed: Pulse Duration = 300µs, Duty Cycle 1.5%.
TO-3 Mechanical Data
Part Number Table
Description Part Number
Darlington Transistor, TO-3 MJ3001
Dimensions Minimum Maximum
A11.00 (0.433) 13.10 (0.516)
B0.97 (0.038) 1.15 (0.045)
C1.50 (0.59) 1.65 (0.065)
D8.32 (0.327) 8.92 (0.351)
E19.00 (0.748) 20.00 (0.787)
G10.70 (0.421) 11.10 (0.437)
N16.50 (0.649) 17.20 (0.677)
P25.00 (0.984) 26.00 (1.023)
R4.00 (0.157) 4.09 (0.161)
U38.50 (1.515) 39.30 (1.547)
V30.00 (1.187) 30.30 (1.193)
Dimensions : Inches (Millimetres)
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