Semiconductor Components Industries, LLC, 2004
May, 2004 − Rev. 2 1Publication Order Number:
BAS16TT1/D
BAS16TT1
Preferred Device
Silicon Switching Diode
Features
•Pb−Free Package is Available*
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Continuous Reverse Voltage VR75 V
Recurrent Peak Forward Current IF200 mA
Peak Forward Surge Current
Pulse Width = 10 sIFM(surge) 500 mA
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1) RJA 555 °C/W
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
PD360
2.9
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2) RJA 345 °C/W
Junction and Storage
Temperature Range TJ, Tstg −55 to
+150 °C
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
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Device Package Shipping†
ORDERING INFORMATION
BAS16TT1 SOT−416
CASE 463
SOT−416
STYLE 2
3000 / Tape & Reel
MARKING DIAGRAM
A6
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
3
CATHODE
1
ANODE
BAS16TT1G SOT−416
(Pb−Free) 3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
BAS16TT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF−
−
−
−
715
866
1000
1250
mV
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
IR−
−
−
1.0
50
30
A
Capacitance
(VR = 0, f = 1.0 MHz) CD− 2.0 pF
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 ) (Figure 1) trr − 6.0 ns
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 ) (Figure 2) QS − 45 PC
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3) VFR − 1.75 V
BAS16TT1
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3
Figure 1. Reverse Recovery Time Equivalent Test Circuit
Figure 2. Stored Charge Equivalent Test Circuit
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
VF
1 ns MAX
90%
10%
t
100 ns
tif
trr
Irr
500 DUT
50
DUTY CYCLE = 2%
Vf
90%
10%
20 ns MAX
t
400 ns
VC
VCM
t
VCM Qa
C
500 DUT BAW62
D1 243 pF 100 K
DUTY CYCLE = 2%
V
120 ns
t
2 ns MAX
10%
90%
V
Vfr
1 K450
50 DUT
DUTY CYCLE = 2%
OSCILLOSCOPE
R 10 M
C 7 pF
BAS16TT1
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4
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.68
0
VR, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 4. Forward Voltage Figure 5. Leakage Current
Figure 6. Capacitance
TA = −40°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (µA)
Figure 7. Normalized Thermal Response
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
BAS16TT1
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5
PACKAGE DIMENSIONS
SC−416/SC−90/SOT−75
CASE 463−01
ISSUE C
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.70 0.90 0.028 0.035
B1.40 1.80 0.055 0.071
C0.60 0.90 0.024 0.035
D0.15 0.30 0.006 0.012
G1.00 BSC 0.039 BSC
H−−− 0.10 −−− 0.004
J0.10 0.25 0.004 0.010
K1.45 1.75 0.057 0.069
L0.10 0.20 0.004 0.008
S0.50 BSC 0.020 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) B
−A−
−B−
S
D
G
3 PL
0.20 (0.008) A
K
J
L
C
H
3
2
1
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
BAS16TT1
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6
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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BAS16TT1/D
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