TOPAZ SEMICONDUCTOR OSE D Bj coaseas Q001L1L1e O | T=29-25 TlIEA\Z yeos0s, vP1003 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-NIODE D-NiOS POWER FETs ORDERING INFORMATION in : Plastic . VP1008L : Po806M : VPi008M 5.0 ohm. -100V, ohm FEATURES APPLICATIONS @ Gate Stand-off Voltage, 40V min. @ Motor Controls B Low Output and Transfer Capacitances @ Logic interfaces lm N-Channel Complements Available @ Pulse Amplifiers ABSOLUTE MAXIMUM RATINGS (T, = +25C unless otherwise noted) Drain-Source Voltage Maximum Power Dissipation a7 oak (0,0: -100V To =+100C Te = +25C VPOB0B 2. eect ee eee eee -80V TO-92 Pkg. wissceeseeee 0.4W 3.0W Drain-Gate Voltage (Ras = 1MQ) TO-287 Pkg. cicseereees 0.6W 4.3W VP1OO8 wee cece cere cece ce ts tv eeneeteeree -100V Linear Derating Factor VPOB08 occ cece cece ec etree eee neereteee -80V Junction Junction Gate-Source Voltage ........... cee cence +40V to Ambient to Case Gontinuous Drain Current (mW/C) (mW/C) To =4100C Ty =+25C TO-92 Pkg. ...eeeee eens 5.33 24 TO-92 Pkg. ...... eee eee -.18A -21A TO-2387 Pkg. wc. cee eee 8.0 34 TO-237 PKg. ..scceeeaee -~21A -.33A Operating Junction and Storage Peak Pulsed Drain Current .......cccnerecees -3.0A Temperature Range ..scsesceeeennee -55 to +150C Lead Temperature (1/16" from mounting surface for 10 SC)... cece cece cee e ee neenee +300C PIN CONFIGURATIONS CHIP CONFIGURATION TO-226AA TO-237 (TO-92) TL GATE o! SOURCE S G D,TAB See Package 5 See Package 7 Dimensions: .054 * .051 = ,020 in. Drain is backside contact. 3-156 0-88-6 TOPAZ SEMICONDUCTOR OSE D B soss2at Ud01L13 2 i TFA Z T-29-25 VP0808, VP1008 SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (1, = +25C unless otherwise noted) VP0808 VP1008 T # CHARACTERISTIC MIN [TYP | MAX | MIN | TYP] MAX UNIT TEST CONDITIONS Drain-Source ne - _ BVoss_ Breakdown Voltage 60 ~100 v In = ~10HA, Vas = 0 Gate-Source _ 2 Ves Threshold Voltage -2.0 -4.5 | -2.0 4.5 Vv oe oan [3 | lang 4 Gate-Body -100 -100 nA Vas = -S0V, Vos = 0 4 Leakage Current 400 400 Ves = +30V, Vos = 0 zi $ =10 Vos = -80V WSL Al , Drain-Source OFF -600 n LYes28 Te = +125G | 7|T} " Leakage Current -io | # Vos = -100V | 8 | | -500 Vas =0 Te = +126C [9] CT ton ON Drain Current | -1.1 11 Vos = -25V, Vas = -10V Drain-Source 7 7 _ _ 10 Vosien On Voltage -4.5 | -5.0 -4.5 | -5.0 Vas = ~10V, Ip = -1.0A | 14 | rostem Drain-Source 45 | 5.0 45 | 5.0 ohms Vas =-10V 12 ON Resistance 8.0 8.0 lo =-1.0A To = +125C Common-Source? _ _ _ 13 Qts Forward Transcond. 200 | 270 200 | 270 mS Vos = -25V, Ip = -0.5A, f = 1KHz Common-Source 4 | Ciss Input Capacitance 60 | 150 60 | 150 D Common-Source Vos = -25V, Vas = 0 15] y| Cos Reverse Transfer 8.0 | 25 8.0 | 25 pF f= 1MHz | IN Capacitance A Common-Source id m| __ Output Capacitance 1 | 60 11 | 60 I Turn-ON 17 c taton Delay Time 10 10 ig| [4 Rise Time 15 15 Von = -26V Turn-OFF nsec | Ri = 45 ohms 19 tatom CUFN-OF 10 10 Re = 25 ohms |_| Delay Time Vaton = -10V 20 tr Fail Time 15 15 21) | is Continuous -21 -21 TO-92 Pkg. 22 Source Current =.33 -33 a [10-287 Pkg. Peak 28 | Is Source Current 6.0 3.0 24/e Source-Drain 1.2 1.2 1 = .21A, TO-92 Pkg. A Vv = 25 * Forward Voltage 1.2 1.2 V | Vos= Orr .33A, TO-237 Pkg. Note 1: Pulse Test 80uSec, 1% Duty Cycle 3-157 TOPAZ SEMICONDUCTOR OSE D B coast. OOOLLLY Y i THFA ZZ SEMICONDUCTOR SWITCHING TIME TEST CIRCUIT Ve 6102 Yop Ry Vout INPUT PULSE t, < 0.6 nSEC PULSE WIDTH 100 nSEC R $ SAMPLING OSCILLOSCOPE t, < 0.36 nSEC Rip? 1M& Cin < 2.0 pF OSCILLOSCOPE T-29-25 VP0808, VP1008 TEST WAVEFORMS TYPICAL PERFORMANCE CHARACTERISTICS (Tc. = +25C unless otherwise specified) "ps(on) DRAIN SOURCE ON RESISTANCE {OHMS} BtyForward Tranaconductance{(mmhoe) DRAIN-SOURCE ON RESISTANCE GATE-SOURCE VOLTAGE ip =-1.0A PULSE TEST 0 pSEC 1% CYCLE Te =+25C 2 -4 -6 -8 -10 -12 -14 Vag GATE-SOURCE VOLTAGE (VOLTS} FORWARD TRANSCONDUCTANCE ON DRAIN CURRENT 2 F 8 & Voa = fe iki CYCLE 0 02 04 -06 -08 -10 -12 -14 {pOrain Current(Amps) VpsDraln-Source Vottage(volte} CAPACITANCE (pF) ON VOLTAGE CHARACTERISTICS 70 460 50 Ip -05A Ip =-0.1A ' -1.9 | PULSE 80.880 1% DUTY o 20 -40 -60 80 -10 -12 -1 VoasGate-Source Voltage(Voite} CAPACITANCES DRAIN-SOURCE VOLTAGE =I5 9 -6 -0 0 Vpg Orain-Source Vaitage ~ {Volts} ~20 -25 35 3-158