fiAMOSPEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DC Current Gain: hFE = 1000(Min) @ |, = 25A hFE = 400(Min) @|,=50A | * Monolithic Construction with Built-in Base-Emitter Shunt Resistor MAXIMUM RATINGS NPN PNP MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 50 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 60-120 VOLTS 300 WATTS Characteristic Symbol | MJ11028 | MJ11030 | MJ11032) Unit MJ11029 | MJ11031 | MJ11033 Coliector-Emitter Voltage Veeo 60 90 120 Vv COllector-Base Voltage Vero 60 90 120 Vv Emitter-Base Voltage Vepo 5.0 V Collector Current-Continuous le 50 A -Peak lom 100 Base Current Ip 2.0 A Total Power Dissipation @T,= 25C Pp 300 Ww Derate above 25C 1.71 wc Operating and Storage Junction T) .Tst c Temperature Range - 65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rejc 0.584 C/W FIGURE -1 POWER DERATING 300 a 250 5 3 200 150 3 e 100 s 50 a a 0 0 25 50 75 100 125 150 175 200 To , TEMPERATURE(C) PIN 1.BASE 2.EMITTER COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 38.75 | 30.96 B 19.28 | 22.23 Cc 7.96 9.28 D 11.18 | 12.19 E 29.20 | 26.67 F 0.92 1.09 G 1.38 1.62 H 2.90 | 30.40 I 16.64 | 17.30 J 3.88 4.36 K 10.67 | 11.18MJ11028, MJ11030, MJ11032 NPN /MJ11029, MJ11031, MJ11033 PNP ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Veeo(su s) Vv (l_ = 100 mA, I, = 0) MJ11028,MJ11029 60 MJ11030,MJ11031 90 MJ11032,MJ11033 120 Collector Cutoff Current IcEo mA ( Veg = 50 V, I, = 0) 2.0 Collector-Emitter Leakage Current leer mA (Veg = 60 V,R,= 1k ohm ) MJ11028,MJ11029 2.0 (Veg = 90 V,R,.= 1k ohm ) MJ11030,MJ11031 2.0 (Veg = 120 V,Rg.= 1k ohm ) MJ11032,MJ1 1033 2.0 (Veg = 60 V,Ryg, = 1 Kohm ,T, = 125C ) MJ11028,MJ11029 10 ( Veg = 90 V, Rog = 1 Kohm ,T, = 125C ) MJ11030,MJ11031 10 ( Veg = 120 VR, = 1 Kk ohm, T, = 125C ) MJ11032,MJ11033 10 Emitter Cutoff Current leBo mA (Veg = 5.0 V, I,= 0 ) 5.0 ON CHARACTERISTICS (1) DC Current Gain hFE (i, = 25A, Veg = 5.0V) 1000 18000 (I, =50A, V.~ =5.0V) 400 Coliector-Emitter Saturation Voltage VocE(sat 4 V (i, = 25A, I, = 250 mA) 2.5 (1, = 50A, 1, = 500 mA) 3.5 Base-Emitter Saturation Voltage Veeisaty | Vv (Il, = 25 A, Il, = 200 mA) 3.0 (I, = 50A, I, = 300 mA) 4.5 DYNAMIC CHARACTERISTICS Small-Signal Current Gain | ee | (Ig = 10 A, Vog = 3.0 V, f = 1.0 MHz) 4.0 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f= [Pye] F test INTERNAL SCHEMATIC DIAGRAM Collector NPN Collector PNP MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 Emitterhre , OC CURRENT GAIN V VOLTAGE (VOLTS) Ic , COLLECTOR CURRENT (Amp) DC CURRENT GAIN Vogx5.0V- 125 c t t NPN Mut 1 2 10 20 50 100 le , COLLECTOR CURRENT (AMP) "ON" VOLTAGES NPN MJ11028,MJ11030,MJ1 Ty=25 C Ioflg=100 2 10 20 50 100 iC , COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE OPERATING AREA (SOA) ~-Borndng Wire Limit Second Breakdown Linit Thermally Limited at T .#28C (Sings Puse) MJ11028, Mult MJ11030,MJ11031 MJ 5 10 20 50 100 200 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) bre , DC CURRENT GAIN V VOLTAGE (VOLTS) MJ11028,30,32 NPN / MJ11029,31,33 PNP (PE I GPSS DC CURRENT GAIN Vors5.0V- ts ec i PNP MJ11029,MJ11031 1 2 5 10 20 Ie , COLLECTOR CURRENT (AMP) "ON" VOLTAGES PNP MJ11029,MJ11031,MJ1 Tye25 PC Igfg=100 2 5 10 20 50 IC , COLLECTOR CURRENT (AMP) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate |-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Tpiq=200 C;Te is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided T.ypxyS 200C At high case temperatures, thermal limita - tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown.